• Journal of the Korean Electrochemical Society
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• v.25 no.1
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• pp.1-12
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• 2022

Lithium metal is the most promising anode for next-generation lithium-ion batteries due to its lowest reduction potential (-3.04 V vs. SHE) and high specific capacity (3860 mAh/g). However, the dendritic formation under high charging current density remains one of main technical barriers to be used for commercial rechargeable batteries. To address these issues, tremendous research to suppress lithium dendrite formation have been conducted through new electrolyte formulation, robust protection layer, shape-controlled lithium metal, separator modification, etc. However, Li/Li symmetric cell test is always a starting or essential step to demonstrate better lithium dendrite formation behavior with lower overpotential and longer cycle life without careful analysis. Thus, this review summarizes overpotential behaviors of Li/Li symmetric cells along with theoretical explanations like initial peaking or later arcing. Also, we categorize various overpotential data depending on research approaches and discuss them based on peaking and arcing behaviors. Thus, this review will be very helpful for researchers in lithium metal to analyze their overpotential behaviors.

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.172-180
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• 2012

The $LiMn_2O_4$ cathodes for lithium ion battery were synthesized from various precursors of manganese oxides and manganese hydroxides. As the first step, nanosized precursors such as ${\alpha}-MnO_2$ (nano-sticks), ${\beta}-MnO_2$ (nano-rods), $Mn_3O_4$ (nano-octahedra), amorphous $MnO_2$(nano-spheres), and $Mn(OH)_2$ (nano-plates) were prepared by a hydrothermal or a precipitation method. Spinel $LiMn_2O_4$ with various sizes and shapes were finally synthesized by a solid-state reaction method from the manganese precursors and LiOH. Nano-sized (500 nm) octahedron $LiMn_2O_4$ showed high capacities of 107 mAh $g^{-1}$ and 99 mAh $g^{-1}$ at 1 C- and 50 C-rate, respectively. Three dimensional octahedral crystallites exhibit superior electrochemical characteristics to the other one-dimensional and two-dimensional shaped $LiMn_2O_4$ nanoparticles. After 500 consecutive charge discharge battery cycles at 10 C-rate with the nano-octahedron $LiMn_2O_4$ cathode, the capacity retention of 95% was observed, which is far better than any other morphologies studied in this work.

• Applied Chemistry for Engineering
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• v.24 no.5
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• pp.551-557
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• 2013

In the present study, pristine carbon nanotube (p-CNT) and thiolated carbon naotube (t-CNT) electrodes were investigated to improve their detectabilities for cadmium (Cd) and lead (Pb). In addition, we evaluate which reaction mechanism is used when the electrolyte contains both Cd and Pb metals. Square wave stripping was employed for analyzing the sensitivity for the metals. A frequency of 30 Hz, a deposition potential of -1.2 V vs. Ag/AgCl and a deposition time of 300 s were used as optimal SWSV parameters. t-CNT electrodes show the better sensitivity for both Cd and Pb metals than that of p-CNT electrodes. In case of Cd, sensitivities of p-CNT and t-CNT electrodes were $3.1{\mu}A/{\mu}M$ and $4.6{\mu}A/{\mu}M$, respectively, while the sensitivities for Pb were $6.5{\mu}A/{\mu}M$ (p-CNT) and $9.9{\mu}A/{\mu}M$ (t-CNT), respectively. The better sensitivity of p-CNT electrodes is due to the enhancement in the reaction rate of metal ions that are facilitated by thiol groups attached on the surface of CNT. When sensitivity was measured for the detection of Cd and Pb metals present simultaneously in the electrolyte, Pb indicates better sensitivity than Cd irrespective of electrode types. It is ascribed to the low standard electrode potential of Pb, which then promotes the possibility of oxidation reaction of the Pb metal ions. In turn, the Pb metal ions are deposited on the electrode surface faster than that of Cd metal ions and cover the electrode surface during deposition step, and thus Pb metals that cover the large portion of the surface are more easily stripped than that of Cd metals during stripping step.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.45-47
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• 2002

반도체 소자의 고집적화 및 고속화가 요구됨에 따라 MOSFET 구조의 게이트 절연막으로 사용되고 있는 SiO₂ 박막의 두께를 감소시키려는 노력이 이루어지고 있다. 0.1㎛ 이하의 소자를 위해서는 15Å 이하의 두께를 갖는 SiO₂가 요구된다. 하지만 두께감소는 절연체의 두께와 지수적인 관계가 있는 누설전류를 증가시킨다[1-3]. 따라서 같은 게이트 개패시턴스를 유지하면서 누설전류를 감소시키기 위해서는 높은 유전상수를 갖는 두꺼운 박막이 요구되는 것이다. 그러므로 약 25정도의 높은 유전상수를 갖고 5.2～7.8 eV 정도의 비교적 높은 bandgap을 갖으며, 실리콘과 열역학적으로 안정한 물질로 알려진 HfO2[4-5]가 최근 큰 관심을 끌고 있다. 본 연구에서는 HfO₂ 박막을 실제 소자에 적용하기 위하여 전극 및 열처리에 따른 HfO₂ 박막의 미세구조 및 전기적 특성에 관한 연구를 수행하였다. 이를 위해, HfO₂ 박막을 reactive DC magnetron sputtering 방법으로 증착하고, XRD, TEM, XPS를 사용하여 ZrO₂ 박막의 미세구조를 관찰하였으며, MOS 캐패시터 구조의 C-V 및 I-V 특성을 측정하여 HfO₂ 박막의 전기적 특성을 관찰하였다. HfO₂ 타겟을 스퍼터링하면 Ar 스퍼터링에 의해 에너지를 가진 산소가 기판에 스퍼터링되어 Si 기판과 반응하기 때문에 HfO₂ 박막 형성과 더불어 Si 기판이 산화된다[6]. 그래서 HfO₂같은 금속 산화물 타겟 대신에 순수 금속인 Hf 타겟을 사용하고 반응성 기체로 O₂를 유입시켜 타겟이나 시편위에서 high-k 산화물을 만들면 SiO/sub X/ 계면층을 제어할 수 있다. 이때 저유전율을 갖는 계면층은 증착과 열처리 과정에서 형성되고 특히 500℃ 이상에서 high-k/Si를 열처리하면 계면 SiO₂층은 증가하는 데, 이것은 산소가 HfO₂의 high-k 박막층을 뚫고 확산하여 Si 기판을 급속히 산화시키기 때문이다. 본 방법은 증착에 앞서 Si 표면을 희석된 HF를 이용해 자연 산화막과 오염원을 제거한 후 Hf 금속층과 HfO₂ 박막을 직류 스퍼터링으로 증착하였다. 우선 Hf 긍속층이 Ar 가스 만의 분위기에서 증착되고 난 후 공기중에 노출되지 않고 연속으로 Ar/O₂ 가스 혼합 분위기에서 반응 스퍼터링 방법으로 HfO₂를 형성하였다. 일반적으로 Si 기판의 표면 위에 자연적으로 생기는 비정질 자연 산화막의 두께는 10～15Å이다. 그러나 Hf을 증착한 후 단면 TEM으로 HfO₂/Si 계면을 관찰하면 자연 산화막이 Hf 환원으로 제거되기 때문에 비정질 SiO₂ 층은 관찰되지 않았다. 본 실험에서는 HfO2의 두께를 고정하고 Hf층의 두께를 변수로 한 게이트 stack의 물리적 특성을 살펴보았다. 선증착되는 Hf 금속층을 0, 10, 25Å의 두께 (TEM 기준으로 한 실제 물리적 두께) 로 증착시키고 미세구조를 관찰하였다. Fig. 1(a)에서 볼 수 있듯이 Hf 금속층의 두께가 0Å일때 13Å의 HfO₂를 반응성 스퍼터링 방법으로 증착하면 HfO₂와 Si 기판 사이에는 25Å의 계면층이 생기며, 이것은 Ar/O₂의 혼합 분위기에서의 스퍼터링으로 인한 Si-rich 산화막 또는 SiO₂ 박막일 것이다. Hf 금속층의 두께를 증가시키면 계면층의 성장은 억제되는데 25Å의 Hf 금속을 증착시키면 HfO₂ 계면층은 10Å미만으로 관찰된다. 그러므로 Hf 금속층이 충분히 얇으면 플라즈마내 산소 라디칼, 이온, 그리고 분자가 HfO₂ 층을 뚫고 Si 기판으로 확산되어 SiO₂의 계면층을 성장시키고 Hf 금속층이 두꺼우면 SiO/sub X/ 계면층을 환원시키면서 Si 기판으로의 산소의 확산은 막기 때문에 계면층의 성장은 억제된다. 따라서 HfO₂/Hf(Variable)/Si 계에서 HfO₂ 박막이 Si 기판위에 직접 증착되면, 순수 HfO₂ 박막의 두께보다 높은 CET값을 보이고 Hf 금속층의 두께를 증가시키면 CET는 급격하게 감소한다. 그러므로 HfO₂/Hf 박막의 유효 유전율은 단순 반응성 스퍼터링에 의해 형성된 HfO₂ 박막의 유전율보다 크다. Fig. 2에서 볼 수 있듯이 Hf 금속층이 너무 얇으면 계면층의 두께가 두꺼워 지고 Hf 금속층이 두꺼우면 HfO₂층의 물리적 두께가 두꺼워지므로 CET나 EOT 곡선은 U자 형태를 그린다. Fig. 3에서 Hf 10초 (THf=25Å) 에서 정전 용량이 최대가 되고 CET가 20Å 이상일 때는 high-k 두께를 제어해야 하지만 20Å 미만의 두께를 유지하려면 계면층의 두께를 제어해야 한다.

• Journal of the Korean Electrochemical Society
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• v.2 no.3
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• pp.123-129
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• 1999

Initial electrochemical characteristics of $LiCoO_2$ electrode for lithium ion battery with various content of super s black as conductive material were evaluated through the charge/discharge with the potential range of 4.3V to 2.0V versus $Li^+/Li^+$. The rate of C/4 and C/2 by the 3 electrode test cell composed with an electrolytic solution of 1 mol/l $LiPF_6/EC+DEC(1:3\;by\; weight)$. Lithium was used as reference electrode. High impedance charge behavior was observed at early stage of charge. In the case of $3\%w/w$ of super s black as conductive material, the specific resistance of the high impedance releasing was $3.82\;{\Omega}\;{\cdot}\;g-LiCoCo_2$ at the current density of $0.5 mA/cm^2$, which corresponds 7 times of the specific resistance of electrode $(0.728 g-LiCoO_2)$. At second charge, the specific resistance of the high impedance releasing was 63 mn · g-Lico02, which corresponds 12eio of the specific resistance of electrode and only $1.7\%$ of that of the first charge. The first charge and discharge specific capacities at C/4 rate were 160-161 and $153\~155mAh/g-LiCoO_2$, respectively, to lead $95.4\~96.4\%$ of coulombic efficiencies and ca. $6 mAh/g-LiCoO_2$ of initial irreversible specific capacity. Specific resistance at the end of charge and rest showed low value at content of super s black between 2 and $7\%w/w$, which agreed with characteristics of irreversible specific capacity. Capacity densities were reduced by the increasing the content of conductive material. They were 447 and 431mAh/ml when 2 and $2.9\%w/w$ of super s black were used, respectively, at the rate of C/4.

• The Journal of Korean Academy of Prosthodontics
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• v.47 no.1
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• pp.39-45
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• 2009

Statement of problem: Recently precalcification treatment has been studied to shorten the period of the implant. Purpose: This study was performed to evaluate the effect of precalcification treatment of $TiO_2$ Nanotube formed on Ti-6Al-4V Alloy. Material and methods: Specimens of $20{\times}10{\times}2\;mm$ in dimensions were polished sequentially from #220 to #1000 SiC paper, ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. The nanotubular layer was processed by electrochemical anodic oxidation in electrolytes containing 0.5 M $Na_2SO_4$ and 1.0 wt% NaF. Anodization was carried out using a regulated DC power supply (Kwangduck FA, Korea) at a potential of 20 V and current density of $30\;㎃/cm_2$ for 2 hours. Specimens were heat-treated at $600^{\circ}C$ for 2 hours to crystallize the amorphous $TiO_2$ nanotubes, and precalcified by soaking in $Na_2HPO_4$ solution for 24 hours and then in saturated $Ca(OH)_2$ solution for 5 hours. To evaluate the bioactivity of the precalcified $TiO_2$ nanotube layer, hydroxyapatite formation was investigated in a Hanks' balanced salts solution with pH 7.4 at $36.5^{\circ}C$ for 2 weeks. Results: Vertically oriented amorphous $TiO_2$ nanotubes of diameters 48.0 - 65.0 ㎚ were fabricated by anodizing treatment at 20 V for 2 hours in an 0.5 M $Na_2SO_4$ and 1.0 NaF solution. $TiO_2$ nanotubes were composed with strong anatase peak with presence of rutile peak after heat treatment at $600^{\circ}C$. The surface reactivity of $TiO_2$ nanotubes in SBF solution was enhanced by precalcification treatment in 0.5 M $Na_2HPO_4$ solution for 24 hours and then in saturated $Ca(OH)_2$ solution for 5 hours. The immersion in Hank's solution for 2 weeks showed that the intensity of $TiO_2$ rutile peak increased but the surface reactivity decreased by heat treatment at $600^{\circ}C$. Conclusion: This study shows that the precalcified treatment of $TiO_2$ Nanotube formed on Ti-6Al-4V Alloy enhances the surface reactivity.

• Journal of IKEEE
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• v.18 no.4
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• pp.552-558
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• 2014

This paper suggests how to design a ZigBee-chip-based communication module to remotely measure radiation level. The suggested communication module consists of two control processors for the chip as generally required to configure a ZigBee system, and one chip module to configure a ZigBee RF device. The ZigBee-chip-based communication module for remote radiation measurement consists of a wireless communication controller; sensor and high-voltage generator; charger and power supply circuit; wired communication part; and RF circuit and antenna. The wireless communication controller is to control wireless communication for ZigBee and to measure radiation level remotely. The sensor and high-voltage generator generates 500 V in two consecutive series to amplify and filter pulses of radiation detected by G-M Tube. The charger and power supply circuit part is to charge lithium-ion battery and supply power to one-chip processors. The wired communication part serves as a RS-485/422 interface to enable USB interface and wired remote communication for interfacing with PC and debugging. RF circuit and antenna applies an RLC passive component for chip antenna to configure BALUN and antenna impedance matching circuit, allowing wireless communication. After configuring the ZigBee-chip-based communication module, tests were conducted to measure radiation level remotely: data were successfully transmitted in 10-meter and 100-meter distances, measuring radiation level in a remote condition. The communication module allows an environment where radiation level can be remotely measured in an economically beneficial way as it not only consumes less electricity but also costs less. By securing linearity of a radiation measuring device and by minimizing the device itself, it is possible to set up an environment where radiation can be measured in a reliable manner, and radiation level is monitored real-time.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.667-678
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• 2002

In this paper, a new radiating structure with a multi-layered two-dimensional metallic disk array was proposed for shaping the flat-topped element pattern. It is an infinite periodic planar array structure with metallic disks finitely stacked above the radiating circular waveguide apertures. The theoretical analysis was in detail performed using rigid full-wave analysis, and was based on modal representations for the fields in the partial regions of the array structure and for the currents on the metallic disks. The final system of linear algebraic equations was derived using the orthogonal property of vector wave functions, mode-matching method, boundary conditions and Galerkin's method, and also their unknown modal coefficients needed for calculation of the array characteristics were determined by Gauss elimination method. The application of the algorithm was demonstrated in an array design for shaping the flat-topped element patterns of $\pm$20$^{\circ}$ beam width in Ka-band. The optimal design parameters normalized by a wavelength for general applications are presented, which are obtained through optimization process on the basis of simulation and design experience. A Ka-band experimental breadboard with symmetric nineteen elements was fabricated to compare simulation results with experimental results. The metallic disks array structure stacked above the radiating circular waveguide apertures was realized using ion-beam deposition method on thin polymer films. It was shown that the calculated and measured element patterns of the breadboard were in very close agreement within the beam scanning range. The result analysis for side lobe and grating lobe was done, and also a blindness phenomenon was discussed, which may cause by multi-layered metallic disk structure at the broadside. Input VSWR of the breadboard was less than 1.14, and its gains measured at 29.0 GHz. 29.5 GHz and 30 GHz were 10.2 dB, 10.0 dB and 10.7 dB, respectively. The experimental and simulation results showed that the proposed multi-layered metallic disk array structure could shape the efficient flat-topped element pattern.