• Title/Summary/Keyword: 이온권

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Membrane Perfomance of Sulfonated Polyetherimide

  • 김완주;권영남;전종영;탁태문
    • Proceedings of the Membrane Society of Korea Conference
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    • 1996.10a
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    • pp.71-72
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    • 1996
  • Polyetherimide(PEI)계의 고분자는 막 성능이 우수하고 내열성과 내유기용매성 등이 우수한 열가소성수지로서 film, sheet, tubular형으로 만들 수 있어 한외여과막이나 역삼투막, 기체분리막 등에 이용되고 있다. 한편 투과속도를 높이고, fouling을 줄이기 위한 친수성 향상은 막 소재의 화학적 개질에 있어서 주된 목표이다. sulfonation은 막 재질의 소수성을 감소시켜 water permeability를 향상시키는데 있어서 매우 유용한 방법으로 이온교환수지, 이온교환막, anion형 하전막의 제조에 이용되어 왔다. 본 실험에서는 polyetherimide계 고분자를 chlorosulfonic acid(CSA)를 이용하여 술폰화시킨 sulfonated polyetherimide(SPEI)를 제조하여 막 성능을 측정하였다.

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A Study on the Preparation of Metal-Ion Separation Membrane with Hydrophilic Polyphosphazenes (친수성 포스파젠 고분자를 이용한 금속 이온 분리막 제조에 관한 연구)

  • Kwon, Suk-Ky;Lee, Byung-Chul
    • Applied Chemistry for Engineering
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    • v.10 no.3
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    • pp.445-449
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    • 1999
  • Hydrophilic polyphosphazenes were synthesized from hydrophobic polyphosphazenes by adding methoxyethylenoxy side chains and cast by dip-coating method into membranes supported on porous polypropylene mesh filter sheet for metal separation testing. A solution of $Cr^{3+},\;Co^{2+},\;Mn^{2+}$ nitrates was used in diffusion experiments which were conducted from $25^{\circ}C$ to $60^{\circ}C$. lt was found that the ion transport properties were increased as the repeating number of ethylenoxy side chain increased. Membrane from trifluoroethoxy methoxyethoxyethoxyethoxy co-substituted polyphosphazenes was found to separate $Cr^{3+}$ ion from $Mn^{2-}$ and $Co^{2+}$ ions with separation factor of 4.5 at $60^{\circ}C$.

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A Study on the Preparation of Ion-Exchange Membranes with Polyphosphazenes (포스파젠 고분자를 이용한 이온교환 분리막 제조에 관한 연구)

  • Kwon, Suk-Ky;Lee, Byung-Chul
    • Applied Chemistry for Engineering
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    • v.9 no.3
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    • pp.435-439
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    • 1998
  • A new series of ion separation membrane materials based on pheonoxy and trifluoroethoxy co-substituted polyphosphazene has been designed and synthesized. The polymers were characterized by $^{31}P$ NMR, FT-IR spectroscopy, elemental analysis, and get permeation chromatography. The basic phosphazene membranes were sulfonated to obtain better hydrophilicity and ion-selectivity. The membrane from $[NP(OC_6H_4SO_3H)_{1.58}(OCH_2CF_3)_{0.42}]_n$ gave excellent values of ion transport number, area resistivity, and also ion exchange capacity, compared with the commercial membranes.

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Electrical Properties of Silicon Implants in Cr-Doped GaAs (실리콘을 주입한 크롬이 도핑된 GaAs의 전기적 성질에 관한 연구)

  • 김용윤
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.20 no.5
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    • pp.50-55
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    • 1983
  • A comprehensive study of the electrical properties of low-dose Si implants in Cr-doped GaAs substrates has been made using the Hall-effect/sheet-resistivity measurement technique for various ion doses and annealing temperatures. The samples were implanted at room temperature and annealed with silicon nitride encapsulants in a hydrogen atmosphere for 15 minutes. H-type layers were produced at all dose levels investigated, and the optimum annealing temperature was 850$^{\circ}C$ for all doses. The highest electrical activation efficiency was 89% for Cr-doped GaAs substrates. Depth profiles of carrier concentrations and mo-bilities are highly dependent upon ion dose and annealing temperature. Significant im-plantation damage still remains after an 800$^{\circ}C$ anneal, and a 900$^{\circ}C$ anneal produces signi-ficant outdiffusion as well as indiffusion of the implanted Si ions.

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