• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1735-1737
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• 1999

In this study, several lanthanide complexes such as Eu$(TTA)_3$(Phen). Tb$(ACAC)_3$(Cl-Phen) were synthesized and the white-light electroluminescence (EL) characteristics of their thin films were investigated. where the devices having structures of anode/TPD/Tb$(ACAC)_3$(Cl-Phen)/Eu$(TTA)_3$(Phen)/$Alq_3$ or $Bebq_2$/ cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode (cathode). Details on the white-light-emitting characteristics of these device structures were explained by the energy band diagrams of various materials used in these structures, where the energy levels of new materials such as ionization potential (IP) and electron affinity (EA) were measured by cyclic voltametric method.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.6
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• pp.578-583
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• 2013

The lighting devices using organic light emitting diodes (OLEDs) are actively researched because of the various advantages such as high power efficiency and 2-dimensitonal lighting emitting. To commercialize those OLED lighting devices, the manufacturing cost must be downed to comparable price with conventional light sources. Here, we demonstrate a reverse gravure-offset or gravure off-set printed metal electrode for the auxiliary electrode for OLED lighting devices. For the fabricated OLED's auxiliary electrode, we used Ag nano-paste and printed metal grid structure with a line width and spacing of several ten and hundred micrometer by using gravure-offset printing. In the end the printing metal grid pattern are successfully achieved by optimization of various experimental conditions such as printing pressure, printing speed and printing delay time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.446-449
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• 2015

An improvement of light-extraction efficiency of organic light-emitting diodes was studied by using random-textured films (RTF). Device was made in a structure of RTF/glass/ITO/TPD/$Alq_3$/LiF/Al. RTF mold was made by spreading PDMS solution on a sandpaper. By pressing this mold on the glass substrate pre-coated with ZPU material, the RTF was obtained. From this study, there was an improvement of external quantum efficiency by about 30% in the device with the random-textured film (RTF 40) compared to that of the reference one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.90-93
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• 2002

In the surface pressure-area isotherms of mixed monolayers, mixtures containing as much as 30 mol% of AA form stable condensed monolayer while the monolayer without AA is in the expanded state because PVK take on 3D collapsed. All of the mixed monolayers with 0, 10, 20 and 30 mol% of AA could be readily transferred onto ITO substrate at 16, 17, 24 and 26 mN/m, respectively. The monolayer containing 30 mol% of AA, however, showed a roughness value of 28A and became homogeneous decreasing with the phase separation. We fabricated organic EL device of ITO/CuPc/MEL/BBOT/iLiF/Al using mixed monolayer of 13, 19 and 25 layer deposited by LB method as a emitting layer. In the voltage-current characteristics of EL device, current density was much smaller than that of the spin-coated devices. It may due to the large contact resistance existed at the interface of LB layer/organic layer inhibit carrier injection to the emitting layer. EL spectra of device showed peaks at 450. 470, 505, 555 and 650 nm and the white light emission indicate the CIE coordinate x=0.306, y=0.353.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.332-333
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• 2009

In this paper, we have deposited silicon nitride films by plasma-enhanced chemical vapor deposition (PECVD). For films deposited under optimized conditions, the mechanism of plasma-enhanced vapor deposition of silicon nitride is studied by varying process parameters such as rf power, gas ratio, and chamber pressure. It was demonstrated that organic light-emitting diode(OLEDs) were fabricated with the inorganic passivation layer processing. We have been studied the inorganic film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation layer, we have carried out the fabrication of OLEDs and investigate with luminescence and MOCON.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.896-900
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• 2010

Electrical properties of organic light-emitting diodes were studied in a device with 7,7,8,8-tetracyano-quinodimethane (TCNQ) to see how the TCNQ affects on the device performance. Since the TCNQ has a high electron affinity, it is used for a charge-transport and injection layer. We have made a reference device in a structure of ITO(170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm). And two types of devices were manufactured. One type of device is the one made by doping 5 and 10 vol% of TCNQ to N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) layer. And the other type is the one made with TCNQ layer inserted in between the ITO anode and TPD organic layer. Organic layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. It was found that for the TCNQ doped devices, turn-on voltage of the device was reduced by about 20 % and the current efficiency was improved by about three times near 6 V. And for devices with TCNQ layer inserted in between the ITO anode and TPD layer, it was found that the current efficiency was improved by more than three times even though there was not much change in turn-on voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.569-574
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• 2008

In the device structure of ITO/tris(8-hydroxyquinoline) aluminum ($Alq_3$)/Al device, we investigated the efficiency improvement of organic light-emitting diodes (OLEDs) depending on the hole-size of crucible boat. The device was manufactured using a thermal evaporation under the base pressure of $5{\times}10^{-6}\;Torr$. The $Alq_3$ organics were evaporated to be 100 nm thick at a deposition rate of $1.5\AA/s$, and in order to investigate the optimal surface roughness of $Alq_3$, the $Alq_3$ was thermally evaporated to be 0.8 mm, 1.0 mm, and 1.5 mm as a hole-size of the boat, respectively. We found that luminance and external quantum efficiency are superior when the hole-size of the boat is 1.0 mm. The external quantum efficiency of the device made with the hole-size of 1.0 mm boat were improved by a factor of ten compared to the devices made with the hole-size of non boat.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.745-753
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• 2013

Performance of organic light-emitting diodes incorporating microlens array was simulated using a Light Tools software. Use of microlens array can help the light to escape out of the device. We simulated a reference device that is consisted of reflection layer, emissive layer, and flat transparent substrate. And in this reference device, outcoupled efficiency of 22% was obtained. Several shapes of microlens were applied such as hemisphere, trapezoid, cone, and rectangular parallelepiped. The results showed the improvement of outcoupled efficiency of the device with microlens compared to that of the reference one. And from the analyses of the simulated data, the obtained appropriate shape of microlens is hemisphere, and the improvement of the device with hemispherical lens is 57% higher than that of the reference one.

• Journal of the Korean Applied Science and Technology
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• v.19 no.1
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• pp.68-72
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• 2002

We have seen the effects of buffer layer in organic light-emitting diodes(OLEDs) using poly(N-vinylcarbazole)(PVK) depending on a concentration of PVK. Polymer PVK buffer layer was made using spin casting technique. Two device structures were fabricated; one is ITO/TPD/$Alq_{3}$/Al as a reference, and the other is ITO/PVK/TPD/$Alq_{3}$/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage-luminance characteristics and an external quantum efficiency were measured with a variation of spin-casting rpm speeds and PVK concentration. We have obtained an improvement of external quantum efficiency by a factor of four when the PVK concentration is 0.1wt% is used. The improvement of efficiency is expected due to a function of hole-blocking of PVK in OLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.174-177
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• 2001

We have seen the effects of buffer layer in organic light-emitting diodes using poly(N-vinylcarbazole)(PVK). Polymer PVK buffer layer was made using spin casting techniques. Two different types of spin casting have been applied; static coating and dynamic coating. Two device structures were fabricated; one is ITO/TPD/Alq$_3$/Al as a reference, and the other is ITO/PVK/TPD/Alq$_3$/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage characteristics and luminous efficiency were measured with a variation of spin-casting methods and rpm speeds. We have obtained an improvement of luminous efficiency by a factor of two and half when the PVK buffer layer is used.