• Journal of Digital Contents Society
• /
• v.5 no.4
• /
• pp.251-256
• /
• 2004

The flatness of a silicon wafer concerned with ULSI chip is one of the most critical parameters ensuring high yield of wafers. That is necessary to constitute the circuit with high quality for he surface of silicon wafer, which comes to be base to make the direct circuit of the semiconductor, Flatness, therefore, is the most important factor to guarantee it wafer with high quality. The process of polishing is one of the most crucial production line among 10 processing stages to change the rough surface into the flatnees with best quality. Currently at this process, it is general for an engineer in charge to observe, judge and control the model of wafer from the monitor of measuring equipment with his/her own eyes to enhance the degree of flatness. This, however, is quite a troublesome job for someone has to check of process by one's physical experience. The purpose of this study is to approach the model of wafer with digital contents and to apply the result of the research for an algorithm which enables to control the polishing process by means of measuring the degree of flatness automatically, not by person, but by system. In addition, this paper shows that this algorithm proposed for the whole wafer flatness enables to draw an estimated algorithm which is for the thickness of sites to measure the degree of flatness for each site of wafer.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.17 no.1
• /
• pp.21-28
• /
• 2008

The final polishing process is based on slurry, pad, conditioner, equipment. Therefore, the concept of wafer final polishing is also necessary for repeatability of results between polished wafers. In this study, the machining conditions have a pressure, table speed, machining time and slurry ratio. This research investigated the surface characteristics that apply variable machining conditions and response surface methodology was used to obtain more flexible and optimumal condition base on Taguchi method. On the base of estimated response surface curvature from the equation and results of Taguchi method, combined design of experiment was considered to lead to optimumal condition. Finally, polished wafer was obtained mirror like surface.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.11 no.1
• /
• pp.1-6
• /
• 2012

The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.11 no.6
• /
• pp.48-54
• /
• 2012

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2012.05a
• /
• pp.175-176
• /
• 2012

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.05a
• /
• pp.20.1-20.1
• /
• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.06a
• /
• pp.749-750
• /
• 2007

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.17 no.2
• /
• pp.1-6
• /
• 2008

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.

• Journal of Digital Contents Society
• /
• v.3 no.1
• /
• pp.113-122
• /
• 2002

The flatness of a silicon wafer concerned with ULSI chip is one of the most critical parameters ensuring high yield of wafers. The polishing process that measures and controls the flatness of a silicon wafer is one of the important process in various processes for production silicon wafer, which are still being done today by manual. But engineers in polishing process are requested to have many experiences and to check silicon wafers one by one. In this paper, we propose an algorithm used interpolation that estimates wafer's shape and sorts wafers automatically, then we can control the flatness of wafers in polishing process by automatic system.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.13 no.3
• /
• pp.53-60
• /
• 2004

We have developed and manufactured an experimental ultrasonic polishing machine with frequency of 20kHz at the power of vibration 1.7㎾ for effective ultrasonic polishing in processing of high hardness material. Design of the horn is performed by the FEM analysis. The following conclusions were empirically deduced through experimental results to clarify the major elements which affect the surface roughness during the ultrasonic process by following the experimental plans. The ultrasonic polishing machine has been developed in parts of structure part, ultrasonic generator, vibrator. We were able to process the high hardness material without difficulty as a result of ultrasonic polishing by utilizing the groove added step-type horn. Through analyzing by applying the experimental plans, the rotating speed of the horn was determined to be the major factor in influencing the surface roughness. In the case of ceramic, wafer, we were able to obtain good surface roughness when the feed rate and the ultrasonic output were higher. Because the load on slurry particle increases when the ultrasonic output is higher, the processed surface becomes worse in the case of optical glass.