• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.256-262
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• 1999

Sputter deposited CoCr(Mo)/Si film were studied with emphasis on the correlation between magnetic properties and crystallographic orientation. The perpendicular coercivities of CoCr films decreased with Si underlayer thickness, whereas those of CoCrMo films increased with Si underlayer thickness. It has been explained that additions of the larger atomic radius Mo atoms in CoCr films impedes crystal growth resulting in a decrease in grain size, thus this small grain size may induce high perpendicular coercivity. The c-axis alignment of CoCrMo film was improved due to addition of 2at.%Mo. It means CoCrMo layer grow self-epitaxial directly from orientation and structure of Si underlayer when the main layer grow on underlayer.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1171-1176
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• 2002

The growth characteristics on the MgO thin films prepared by the e-beam evaporation method have been investigated. We observed the film of preferred orientation and surface morphology with various parameters such as substrate temperature, deposition rate on Si(100) and slide glass respectively. Consequently, it was shown that MgO(111) preferred orientation films can be obtained as the deposition rate was increased on Si(100) substrate. MgO(220) peak was found as the substrate temperature was increased. Whereas, in case of slide glass the orientation is changed from (200) to (111) by substrate temperature. Also we investigated the relationship between the film characteristics and the orientation of MgO thin films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.159-159
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• 2009

본 연구는 기판 바이어스 전압변화에 따른 DC 스퍼터링 TiN 박막의 우선 결정배향성, 표면조도, 평균결정립 크기 및 단면 미세구조에 미치는 영향에 대해 조사하였다.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.511-516
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• 2002

Hexagonal $YMnO_3$ thin films were prepared from $Y(NO_3)_3{\cdot}5H_2O$ and $Mn(CH_3CO_2)_2{\cdot}4H_2O$ as starting materials on the Si(100) substrates by the sol-gel method. The crystal structure and the electrical properties of the $YMnO_3$ thin films were investigated as a function of heat treatment temperature, the amount of water(Rw) of hydrolysis and the addition of catalysis. The crystallization of the $YMnO_3$ thin film began at 700${\circ}C$ and completed at 800${\circ}C$ for 1 h. The c-axis (0001) preferred orientation of hexagonal $YMnO_3$ was detected for the $YMnO_3$ thin films with Rw=6 and that was decreased for the $YMnO_3$ thin films with Rw=1 and Rw=12. The crystallinity and preferred orientation of the $YMnO_3$ thin films were depended on the addition of acid and/or alkali catalysis, which, in turn, the preferred orientation of c-axis was decreased and the orthorhombic phase of $YMnO_3$ was detected to the specimens with the addition of catalysis. The $YMnO_3$ thin film with Rw=6 showed good leakage current density of $1.2{\times}10-8 A/cm^2$ at the applied voltage of 0.2V and the leakage current density was not changed drastically with applied voltage.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.15-15
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.185-185
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• 2003

TiN 박막을 Ti 타겟을 이용하여 Si(001) 기판위에 반응성 RF 마그네트론 스퍼터 방법으로 제조하였다. 반응성 스퍼터링시 온도를 $600^{\circ}C$로 고정하고 $N_2$/Ar비, 공정압력, RF파워를 변화시키면서 박막을 제조하였고 각각의 공정조건에 따른 TiN 박막의 결정성 변화를 XRD, SEM, TEM, HRTEM을 이용하여 조사하였다. 그 결과 TiN 박막은 $N_2$/Ar비가 작을 경우 공정압력이 커짐에 따라 (001) 배향에서 (111) 배향으로 바뀜을 확인하였다. 또한 $N_2$/Ar비가 클 경우는 공정압력이 증가함에 따라(001) 우선 배향성이 향상됨을 확인하였다. 이런 결정성 변화가 전기적 특성에 미치는 영향에 관하여 논의할 것이다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.32-32
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• 1996

• Polymer(Korea)
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• v.26 no.4
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• pp.431-438
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• 2002

We studied the orientation behavior and thermal stability of polyimide (PI) molecules under irradiation of polarized UV (PUV) using polarized fourier transform infrared (FTIR) spectroscopy. In the case of PUV-exposed PI films, the remaining PI molecules after photo-degradation showed molecular orientation perpendicular to the irradiated PUV polarization direction predominantly, due to the preferential degradation of PI molecules parallel to the irradiated PUV Polarization direction. On the other hand, the rubbing of PI films induced reorientation of the PI molecules parallel to the rubbing direction. We also investigated the thermal stability of the alignment layers furled by rubbing and PUV irradiation on the PI films using Polarized FTIR. The thermal stability of the PUV irradiated PI alignment layer is lower than that of the rubbed PI layer due to the fragmentation reaction of the PI by PUV.

• Korean Journal of Materials Research
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• v.7 no.6
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• pp.510-516
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• 1997

반응성RF 마그네트론 스퍼터링 법으로 상온에서 c-축으로 우선 배향된 AIN 박막을 여러 기판 위에 증착하였다. SiO$_{2}$/Si, Si$_{3}$N $_{4}$Si, Si(100), Si(111)그리고 $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에서 AIN(0002)로킹커브 피크의 표준편차는 각각 2.6˚, 3.1˚2.6˚, 2.5˚ 그리고 2.1˚ 의 값을 나타내었다. $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에 증착된 AIN박막은 epitaxial 성장을 나타내었다. Si기판에 증착된 AIN박막에서 측정된 비저항과 1MHz 주파수에서 측정된 유전상수의 값은 각각 $10^{11}$Ωcm와 9.5였다. IDT/AIN/$\alpha$-AI$_{2}$O$_{3}$(0001)구저를 갖는 지연선 소자의 표면 탄성과 특성을 측정하였다. 상 속도, 전기기계 결합계수 그리고 전파손실은 H/λ가 0.17-0.5 범위에서 각각 5448-5640m/s, 0.13-0.17% 그리고 0.41-0.64dB/λ의 값을 나타내었다.다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.153-153
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• 1999