• Title/Summary/Keyword: 외부 공진기 반도체 레이저

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Effective measurement of high facet reflectivity using the variation longitudinal modes spacing of semiconductor external cavity ring lasers (반도체 외부 공진기 링 레이저의 종 모드 간격 변화를 이용한 고반사율을 갖는 Etalon Coating Reflectivity의 정밀 측정)

  • 엄진섭;안상호
    • Korean Journal of Optics and Photonics
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    • v.10 no.6
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    • pp.524-526
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    • 1999
  • It is observed that the mode spacing of an cxternal cavity semiconducror laser can be altered dramatically by the insertion of an intracavity etalon. 111e mode spacing is decreased as a function of etalon's reflectivity and this effect is quantitatively explained by an analysis of resonant modes. We abo show that this effect provides a precise and convenient alternative for determining the coating reflectivity of a high reflectivity etalon. talon.

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Optical Bistabilities in Semiconductor Lasers (반도체 레이저에서의 광쌍안정성)

  • 이창희
    • Proceedings of the Optical Society of Korea Conference
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    • 1991.07a
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    • pp.135-140
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    • 1991
  • 반도체 레이저에서의 여러 가지 다른 원인에 기인하는 광쌍안정성과 이의 응용을 검토하였다. 이득 영역과 흠수포화 매체를 가지고 있는 반도체 레이저, 광전궤환이 가해진 반도체 레이저, cleaved-coupled-cavity 반도체 레이저, distributed feedback 반도체 레이저, twinstripe 반도체 레이저, 외부공진기 반도체 레이저에서의 광쌍안 정성을 고찰하였다. 또, 반도체 레이저 광증폭기에서의 광쌍안정성에 대해서도 검토하였다.

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Characteristics of an External-Cavity Semiconductor Laser with a Fabry-Perrot Etalon inside the External reflector (외부공진기 내에 훼브리 페롯 에탈론이 삽입된 반도체 레이저의 특성)

  • 이명우;서동선
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.6
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    • pp.793-801
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    • 1993
  • We show theoretically that the performance characteristics of an external cavity semiconductor laser, such as frequency locking and frequency noise reduction, can be greatly improved by just inserting a high finesse Fabry-Perrot(F-P) etalon inside the external reflector. For example, when the F-P etalon of finesse 30 and optical thickness 1.5cm is inserted inside the external cavity of length 3.0cm, the frequency locking accuracy and the linewidth reduction ration are increased up to 7.6 times and 86 times respectively compared with the conventional external-cavity laser under the same operation condition.

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Integrated Cavity Output Spectroscopy Using an External Cavity Diode Laser for the Density Absorption Measurement of Trace Gases (미량 기체의 밀도 측정을 위한 외부 공진기 반도체 레이저 광학공동 적분 투과 분광법)

  • Ryoo Hoon Chul;Yoo Yong Shin;Lee Jae Yong;Hahn Jae Won
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.24-30
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    • 2006
  • Integrated cavity output spectroscopy(ICOS) is a simple, non-intrusive absorption measurement technique that can detect and quantify trace-level gas species. The spectral absorbance of a gas is quantified from the integrated optical output of the modulated high-finesse cavity containing the sample which is irradiated by a wavelength-swept laser source. We constructed an experimental setup by using a tunable single mode external cavity diode laser operating at the wavelength near 765 nm and a Fabry-Perot cavity with length modulation achieved by a piezoelectric transducer where one of the cavity mirrors sat on. In the experiment performed on minute oxygen gas at the wave-length near 764.5nm, we demonstrated the minimum detectable absorption of $8.45\times10^{-8}cm^{-1}$.

Evanescent Wave Coupled Laser in High-Q Microspheres (High-Q 마이크로스피어에서의 표면감쇠파 결합 레이저)

  • 최용석;안경원;문희종
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.08a
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    • pp.82-83
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    • 2000
  • 굴절율이 외부보다 큰 실린더 (cylinder)나 스피어 (sphere)는 경계면에서의 전반사에 의해 손실이 매우 적은 high-Q 공진기가 될 수 있음이 잘 알려져 있다. 크기가 수 십 $mu extrm{m}$ 되는 실린더나 스피어에서의 공명모드는 편광(TM, TE), 모드 수 (mode number) n, 모드 순서 (mode order) l에 의해 정의되고 WGM (whispering gallery mode)라고도 불리워진다$^{(1)}$ . 모드 수n 이 클수록 모드 순서 l이 작을수록 공명모드의 Q 값은 큰 경향을 가진다. 액체 방울이나 액체 제트와 같이 열적 섭동에 민감한 마이크로 공진기 (micro-cavity)의 경우 Q값이 $10^{7}$ 정도로 제약되나, 실리카 마이크로 스피어 (micro-sphere)와 같은 고체 구에서 측정된 Q값은 약 $101^{10}$ 정도로 손실이 매우 적은 공진기가 될 수 있다$^{(2)}$ . 이와 같은 마이크로 공진기 특성을 이용하여 다양한 형태의 마이크로 공진기 레이저 대한 연구가 진행되어 왔다. 색소가 첨가된 고체구, 액체 방울, 액체 제트 등에서 기본적인 실험이 이루어졌고 반도체마이크로 스피어 구조에서 WGM 레이저$^{(3)}$ , polymer disc laser$^{(4)}$ , 광양자테 (photonic quantum ring)$^{(5)}$ 특성 연구 등이 실용가능성을 목표로 진행되고 있다. (중략)

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A Study on the Construction of Littman and Littrow Type Tunable Diode Laser Systems (Littman 및 Littrow 타입 파장가변 반도체 레이저의 제작에 관한 연구)

  • Baek, Woon-Sik
    • Korean Journal of Optics and Photonics
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    • v.17 no.3
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    • pp.273-277
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    • 2006
  • In this paper, we constructed the Littman type and fixed Littrow type tunable external-cavity diode laser systems. The laser output, which is the 0th-order diffracted beam from the diffraction grating in an external cavity, was the single longitudinal mode. Its FWHM was measured as less than 9MHz. With the diode driving current of 140mA and operating temperature of $25^{\circ}C$, the coarse tuning range of 5.375nm was measured for the Littman type, and of 13.65nm was measured for the fixed Littrow type. A fine tuning experiment in which an external mirror was rotated by a PZT driven by a sawtooth wave was performed, and its tuning range of 0.042nm was measured for both types. The fixed Littrow type tunable external-cavity diode laser system was an improvement on the conventional Littrow type tunable laser system in which the output direction varies due to the grating embedded in the mirror plate.

Anti-reflection coating on the facet of a spot size converter integrated laser diode using a pair of TiO2 and SiO2 thin films (TiO2와 SiO2 박막 쌍을 이용한 광모드 변환기가 집적된 반도체 레이저 단면의 무반사 코팅)

  • 송현우;김성복;심재식;김제하;오대곤;남은수
    • Korean Journal of Optics and Photonics
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    • v.13 no.5
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    • pp.396-399
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    • 2002
  • Using a bi-layer anti-reflection coating of $TiO_2$and $SiO_2,$ we have achieved a minimum facet reflectivity of $~10^{-5}$ and a band width of 27 nm for a reflectivity of $~10^{-4}$ or less for 1.3 $\mu\textrm{m}$ spot size converter integrated semiconductor lasers. This coating is applicable to external-cavity-tuned laser sources and semiconductor optical amplifiers.

On the Validity of the Effective Cavity Model with the Transfer Matrix Method as a Frame of Reference In VCSELs (수직 공진기 반도체 레이저에서 전달 행렬 방법과의 비교를 통한 유효 공진기 모델의 타당성 검토)

  • 김태용;김상배
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.7
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    • pp.31-36
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    • 2004
  • In comparison with in-plane lasers, predicting the output power and differential quantum efficiency of Vertical-Cavity Surface-Emitting Lasers(VCSELs) is very difficult due to the distributed Bragg reflector(DBR) layers. Therefore, effective cavity model and transfer matrix method have been adapted in order to calculate the output power and differential quantum efficiency The effective cavity model is inappropriate to calculate output power and differential quantum efficiency while it is practically adequate to calculate the threshold gain and threshold current density The reason is that the effective cavity model can not take account of the absorption in GaAs stack layer right below the metal aperture. In this paper, we have compared the threshold current and differential quantum efficiency calculated by using transfer matrix method with effective cavity model and we have made a study of the validity of the effective cavity model. Finally, we have confirmed the versatility of the transfer matrix method with these studies.

Near Infrared Laser Based on Polymer Waveguide Bragg Grating (폴리머 광도파로 브래그 격자 기반의 근적외선 레이저)

  • Kim, Kyung-Jo;Son, Nam-Seon;Kim, Jun-Whee;Oh, Min-Cheol
    • Korean Journal of Optics and Photonics
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    • v.22 no.4
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    • pp.179-183
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    • 2011
  • An external cavity laser operating at near infrared wavelength is demonstrated by incorporating polymer waveguide Bragg reflectors. 3rd order Bragg grating and oversized rip waveguide structure were designed by using the effective index method and the transmission matrix method. The polymer waveguide was fabricated using polymer materials with refractive indices of 1.462 and 1.435 for the core and the cladding layers, respectively. The external feedback laser with 875-nm Bragg grating exhibits single mode lasing located at 850-nm wavelength with an output power of 0 dBm, a 20-dB bandwidth of 0.2 nm and a side mode suppression ratio of 40 dB.