• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.357-362
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• 2005

The tandem solar cell composed of a dye-sensitized solar cell (DSC) and a thermoelectric generator (TEG) was designed. In such new cell, the characteristics of DSC and TEG were investigated. DSC uses the wavelength range of 380∼750 nm and has the maximum efficiency of below 10 ％. If the solar light transmitted through DSC can be converted to heat energy, TEG can generate electric energy using this heat energy. By this means, it is possible to utilize most of solar energy in the wavelength range of 350∼3000 nm for electric generation and it can be expected to obtain higher solar energy conversion efficiency exceeding the known limit of maximum efficiency. For this purpose we suggest the tandem solar cell constructed with DSC and TEG. In this structure, DSC has a carbon nanotube film as a counter electrode of DSC in order to collect the solar light and convert it to heat energy. We measured the I-V characteristics of DSC and TEG, assembled to the tandem cell. As a result, it was shown that DSC with carbon nanotube and TEG had the efficiency of 9.1 ％ and 6.2 ％, respectively. From this results, it is expected that the tandem solar cell of the new design has the possibility of enhanced conversion efficiency to exceed above 15 ％.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.141-142
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• 2006

Thermoelectric properties and microstructures of $Sr_{8-x}Ba_xGA_{16}Ge_{30}$ alloys fabricated by the arc-melting method were investigated. The alloys with the nominal composition of $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ were the single-phase alloys, while those of $Sr_4Ba_4Ga_{16}Ge_{30}$ and $Sr_2Ba_6Ga_{16}Ge_{30}$ were two-phases alloys. Electrical resistivity and the Seebeck coefficient for both two-phases alloys were higher in magnitude than those of the single-phase alloys between room temperature and 873K The thermal conductivities for both two-phase alloys were reduced with respect to those of the single-phase alloys in the whole temperature range. The maximum values of ZT for $Sr_4Ba_4Ga_{16}Ge_{30}$ and $Sr_2Ba_6Ga_{16}Ge_{30}$ were achieved with the values of 0.69 at 753K and 0.51 at 754K, respectively, while those of $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ were 0.86 at 758K and 0.76 at 943K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.120-120
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• 2006

탄소나노튜브는 nm급의 크기에 높은 전기전도도, 열전도 효율, 감한 기계적 강도 등의 장점을 가지며, FED(Field Emission Display), 극미세 전자 스위칭 소자, SET(Single Electron Transistor), AFM(Atomic Force Microscope) tip등 여러 분야로의 응용을 연구하고 있다. 본 연구에서는 탄소나노튜브를 Si 웨이퍼 위에 Ni/Ti 금속층을 촉매층으로 사용하고, 암모니아($NH_3$)가스와 아세틸렌 ($C_2H_2$)가스를 각각 희석가스와 성장원으로 사용하여 합성하였다. 탄소나노튜브의 성장은 Hot filament 화학기상증측(HFPECVD) 방식을 사용하였으며, 이 방법은 다량의 합성, 높은 균일성, 좋은 정렬 특성등의 장점을 가진다. 성장 온도는 탄소나노튜브의 성장 특성을 변화시키는 중요한 요소이다. 성장 온도에 따라 수직적 성장, 성장 밀도등의 특성 변화를 관찰하였다. 성장된 탄소나노튜브층 성분 분석은 에너지 분산형 X-선 측정기(EDS)를 통해 관찰하였고, 끝단에 촉매층이 존재하는 30~50 nm 폭을 가진 다중벽 탄소나노튜브를 고배율 투과전자현미경(HRTEM) 분석을 통해 관찰하였다. 전계방사 주사전자현미경(FESEM) 분석을 동해 1~3${\mu}m$의 길이를 가진 탄소나노튜브가 높은 밀도로 성장된 것을 확인하였다.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.292-296
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• 2003

In an attempt to enhance phase transformation and homogenization of Mn-doped $FeSi_2$, mechanical alloying of elemental powders was applied. Cold pressing and sintering in vacuum were carried out to produce a dense microstructure, and then isothermal annealing was employed to induce a phase transformation to the $\beta$-$FeSi_2$semiconductor. Phase transitions in this alloy system during the process were investigated by using XRD, EDS and SEM. As-milled powders after 100 h of milling were shown to be metastable state. As-sintered iron silicides consisted of untransformed mixture of $\alpha$-$Fe_2$$Si_{5}$and $\varepsilon$-FeSi phases. $\beta$-$FeSi_2$phase transformation was induced by subsequent isothermal annealing at $830^{\circ}C$, and near single phase of $\beta$-$FeSi_2$was obtained after 24 h of annealing. Thermoelectric properties in terms of Seebeck coefficient, and electrical conductivity were evaluated and correlated with phase transformation. Seebeck coefficient electrical resistivity and hardness increased with increasing annealing time due to $\beta$ phase transformation.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• Korean Journal of Materials Research
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• v.15 no.2
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• pp.89-92
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• 2005

The induction melting was employed to prepare Nb-doped $CoSb_3$ skutterudites and their thermoelectric properties were investigated. Single phase $\delta-CoSb_3$ was successfully obtained by induction melting and subsequent annealing at $400^{\circ}C$ for 2 hrs in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased with increasing temperature, indicating mixed conduction behavior. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with increasing the amount of Nb doping, mainly originated from the high Seebeck coefficient around mixed conduction temperature and high electrical conductivity.

• Korean Journal of Materials Research
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• v.15 no.2
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• pp.93-96
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• 2005

The arc melting was employed to prepare undoped $CoSb_3$ compounds and their thermoelectric properties were investigated. Specimen annealed at $400^{\circ}C$ for 24 hrs showed sound microstructure. However, considerable voids and cracks were found after annealing at above $500^{\circ}C$. It seems to be attributed to the phase dissociation and thermal expansion due to phase transitions during annealing and cooling. Single phase $\delta-CoSb_3$ was successfully obtained by annealing at $400^{\circ}C$ for 24 hrs. In the case of increasing annealing temperature, phase decompositions occurred. Undoped $CoSb_3$ showed p-type conduction and intrinsic semiconducting behavior at all temperatures examined. Thermoelectric properties were remarkably improved by annealing and they were closely related to phase transitions.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.24 no.5
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• pp.531-542
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• 2011

The time-dependent temperature distribution across the section in bridges is determined on the basis of the three-dimensional finite element analyses and numerical time integration in this study. The material properties which change with time and thermal stress of concrete are taken into account to effectively trace the early-age structural responses. Since the temperature distribution is nonlinear and depends upon many material constants such as the thermal conductivity, specific heat, hydration heat of concrete, heat transfer coefficients and solar radiation, three representative influencing factors of the construction season, wind velocity and bridge pavement are considered at the parametric studies. The validity of the introduced numerical model is established by comparing the analytical predictions with results from previous analytical studies. On the basis of parametric studies for four different bridge sections, it is found that the creep deformation in concrete bridges must be considered to reach more reasonable design results and the temperature distribution proposed in the Korean bridge design specification need to be improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.425-425
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• 2008

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.454-458
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• 2017

$Bi_2Te_3$-based alloys have been intensively investigated as active materials for thermoelectric power generation devices from low-temperature (< $250^{\circ}C$) waste heat. In the present study, we fabricated Pb-doped, p-type $Bi_{0.48}Sb_{1.52}Te_3$ polycrystalline bulks by using meltsolidification and spark plasma sintering techniques, and evaluated their thermoelectric transport properties in an effort to develop optimized composition for low-temperature power generation applications. The electronic and thermal transport properties of $Bi_{0.48}Sb_{1.52}Te_3$ could be manipulated by Pb doping. As a result, the temperature for a peak thermoelectric performance (zT) gradually shifted toward higher temperatures with Pb content, suggesting that thermoelectric power generation efficiency can be enhanced by controlled Pb doping.