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Phase Transformation and Thermoelectric Properties of Fe0.92Mn0.08Si2 Prepared by Mechanical Alloying

기계적 합금화로 제조된 Fe0.92Mn0.08Si2의 상변화 및 열전 특성

  • Kim, Young-Seob (Dept. of Materials Science & Engineering/Nano Technology Lab., Chungju National University) ;
  • Cho, Kyung-Won (Dept. of Materials Science & Engineering/Nano Technology Lab., Chungju National University) ;
  • Kim, Il-Ho (Dept. of Materials Science & Engineering/Nano Technology Lab., Chungju National University) ;
  • Ur, Soon-Chul (Dept. of Materials Science & Engineering/Nano Technology Lab., Chungju National University) ;
  • Lee, Young-Geun (Dept. of Materials Science & Engineering/Nano Technology Lab., Chungju National University)
  • 김영섭 (충주대학교 신소재공학과/나노기술연구소) ;
  • 조경원 (충주대학교 신소재공학과/나노기술연구소) ;
  • 김일호 (충주대학교 신소재공학과/나노기술연구소) ;
  • 어순철 (충주대학교 신소재공학과/나노기술연구소) ;
  • 이영근 (충주대학교 신소재공학과/나노기술연구소)
  • Published : 2003.05.01

Abstract

In an attempt to enhance phase transformation and homogenization of Mn-doped $FeSi_2$, mechanical alloying of elemental powders was applied. Cold pressing and sintering in vacuum were carried out to produce a dense microstructure, and then isothermal annealing was employed to induce a phase transformation to the $\beta$-$FeSi_2$semiconductor. Phase transitions in this alloy system during the process were investigated by using XRD, EDS and SEM. As-milled powders after 100 h of milling were shown to be metastable state. As-sintered iron silicides consisted of untransformed mixture of $\alpha$-$Fe_2$$Si_{5}$and $\varepsilon$-FeSi phases. $\beta$-$FeSi_2$phase transformation was induced by subsequent isothermal annealing at $830^{\circ}C$, and near single phase of $\beta$-$FeSi_2$was obtained after 24 h of annealing. Thermoelectric properties in terms of Seebeck coefficient, and electrical conductivity were evaluated and correlated with phase transformation. Seebeck coefficient electrical resistivity and hardness increased with increasing annealing time due to $\beta$ phase transformation.

Keywords

References

  1. R. M. Ware and D. J. McNeill, Proc. IEEE, 111, 178 (1964)
  2. U. Birkholz and J. Scheim, Fiz. Stat. Sol, 27, 413 (1968) https://doi.org/10.1002/pssb.19680270141
  3. P. Y. Dusausay, J. Protas, R. Wandi and B. Roques, Acta Crystal, B27(1), 209 (1971)
  4. S. Tokita, T. Amano, M. Okabayashi and I. A. Nishida, Proc. 12th Intl. Conf. on Thermoelectrics, 197 (1993)
  5. I. I soda, Y. Shinohara, Y. Imai, I. A. Nishida and O. Ohashi, Proc. 17th Intl. Conf. on Thermoelectrics, 390 (1998) https://doi.org/10.1109/ICT.1998.740401
  6. S. Shiga, K. Fujimoto and M. Umemoto, Proc. 12th Intl. Conf. on Thermoelectrics, 311 (1993)
  7. I. Yamauchi, I. Ohnaka and S. Uyema, Proc. 12th Intl. Conf. on Thermoelectrics, 289 (1993)
  8. I. Nishida, Phys. Rev., B7, 2710 (1973) https://doi.org/10.1103/PhysRevB.7.2710
  9. J. S. Benjamin, Met. Trans., 1, 1943 (1970) https://doi.org/10.1007/BF02642794
  10. D. M. Rowe and V. S. Schuka, J. Appl. Phys., 52, 7421 (1981) https://doi.org/10.1063/1.328733
  11. Soon-Chul Ur and Il-Ho Kim, Materials Letters, 57, 543 (2002) https://doi.org/10.1016/S0167-577X(02)00826-1
  12. M. Uemoto, Materials Trans., JIM, 36, 373 (1995) https://doi.org/10.2320/matertrans1989.36.373