• Journal of Institute of Control, Robotics and Systems
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• v.4 no.3
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• pp.329-333
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• 1998

본 논문에서는, LSI 적층 기술을 이용한 실시간 처리 마이크로 비젼의 개발을 소개하고 있다. 새롭게 개발된 LSI 적층기술을 이용하여, 영상신호의 증폭, 변환, 연산처리등의 기본기능을 가지는 다수의 LSI 웨이퍼를 적층한다. 각 층간의 고밀도 수직배선을 통하여 대량의 영상정보를 동시에 전달하므로써, 대규모 동시 병렬처리를 가능하게 하며, 다수의 층에 걸쳐 파이프 라인 처리가 이루어진다. VLSI 설계시스템을 이용하여, 윤곽 검출기능을 가지는 테스트 칩을 설계(2 .mu.m CMOS design rule)하고, 시뮬레이션을 통하여 양호한 동작(처리시간 10 .mu.s)을 확인하고 있다. 시험제작을 위해서는, 새롭게 개발된 LSI 적층기술이 이용된다. 영상처리의 기본회로가 실려있는 웨이퍼의 기반을 30 .mu.m 의 두께까지 연마하고, 개발된 웨이퍼 aligner를 이용하여 수직배선이 형성된 상하 두 개의 웨이퍼를 미세조정하면서 접착한다. 이상의 제작과정을 반복하여 두께 1mm이하의 인공망막과 같은 마이크로 비젼을 제작한다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.549-554
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• 2006

In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.400-406
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• 1998

We investigated the preparation and guided-mode properties of $Ti:LiNbO_3$ waveguides which were fabricated by Ti in-diffusion. The diffusion method to reduce the Li out-diffusion was proposed. The optical guided-mode and propagation loss based on butt-coupling pigtailed with PMF-input were measured. How to improve the polishing grade of waveguide endfaces is newly proposed in this paper. To show the mode propagations, the BPM simulations of channel waveguide are described.

• Journal of Dental Rehabilitation and Applied Science
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• v.34 no.1
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• pp.39-45
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• 2018

Purpose: The purpose of this study was to evaluate the clinical effects of erythritol powder air polishing device (EPAP) in addition to scaling and root planing (SRP) in non-surgical periodontal treatment in moderate chronic periodontitis patients. Materials and Methods: Clinical evaluation was performed at 21 sites treated with SRP (control) and 21 sites treated with the addition of SRP+EPAP (test). All examinations were performed before treatment, 1 month after treatment, and 3 months after treatment. Depth of the periodontal pocket, gingival recession, clinical attachment level, plaque index, and bleeding of probing were measured as clinical parameters. Results: In both test and control groups, there was a significant decrease in the depth of the periodontal pocket, plaque index, bleeding of probing, increased gingival recession, and gain of clinical attachment level at 1 month and 3 months after treatment. However, there was no significant clinical difference between the test group and the control group. Clinical result was improved after 1 month compared to the baseline; in contrast, results at 3 months after treatment were worse than at 1 month after treatment. Conclusion: In this study, we cannot suggest that SRP + EPAP is clinically more effective than SRP alone as non-surgical periodontal treatments. Periodic periodontal therapy, at intervals of at least every three months, is important for sustaining effects of this treatment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.1
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• pp.127-132
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• 2012

In this paper, the edge effects of proposed structure in active region for high voltage in shallow trench isolation for very large integrated MOSFET were simulated. Shallow trench isolation (STI) is a key process component in CMOS technologies because it provides electrical isolation between transistors and transistors. As a simulation results, shallow trench structure were intended to be electric functions of passive, as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage.

• Journal of the Korea Society for Simulation
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• v.22 no.4
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• pp.93-98
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• 2013

In this paper, the proposed shallow trench isolation structures for high threshold voltage for very large scale and ultra high voltage integrated circuits MOSFET were simulated. Physically based models of hot-carrier stress and dielectric enhanced field of thermal damage have been incorporated into a TCAD tool with the aim of investigating the electrical degradation in integrated devices over an extended range of stress biases and ambient temperatures. As a simulation results, shallow trench structure were intended to be electric functions of passive, as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.74-79
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• 2007

Most studies on copper Chemical Mechanical Planarization (CMP) have focused on material removal and its mechanisms. Although many studies have been conducted on the mechanism of Cu CMP, a study on uniformity in Cu CMP is still unknown. Since the aim of CMP is global and local planarization, the approach to various factors related to uniformity in Cu CMP is essential to elucidate the Cu CMP mechanism as well. The main purpose of the experiment reported here was to investigate and mechanically analyze the roles of slurry components in the formation of the uniformity in Cu CMP. In this paper, Cu CMP was performed using citric acid($C_{6}H_{8}O_{7}$), hydrogen peroxide($H_{2}O_{2}$), colloidal silica, and benzotriazole($BTA,\;C_{6}H_{4}N_{3}H$) as a complexing agent, an oxidizer, an abrasive, and a corrosion inhibitor, respectively. All the results of this study showed that within-wafer non-uniformity(WIWNU) of Cu CMP could be controlled by the contents of slurry components.

• KSBB Journal
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• v.16 no.3
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• pp.295-301
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• 2001

The leaching effect of Thiobacillus ferrooxidance (ATCC 19859) upon polished pyrite ore in 9K medium at $30^{circ}C$ for 30 days was investigated. The surface atomic ratios for Fe, S, Al, Si, and Cu were analyzed by EPMA using fresh and leached samples. The atomic ratio of Fe and S were changed to Fe rich phase as leaching progressed over 13 days but the Fe/S ratio became constant between 13 and 30 days. SEM imaging showed that $10\mum$ oblong shapes formed on the surface after 13 days and that these further developed until 23 days. Fe, S and K atomic ratios were analyzed by SEM-EDS.

• Convergence Security Journal
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• v.14 no.3_1
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• pp.55-63
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• 2014

The history of mankind has been at war with the war now going on in this moment. To prepare for this war, war history has been studied and its importance can be summarized in three main points. First, to understand the predictions of war and, second, to develop doctrines to fit changing circumstances, and to hone tactics through indirect war experiences. The curriculum of war history education for noncommissioned officer's department(two-year program) must include war lessons and skills to prepare the war. By indirect experiences through training they will have the ability to perform their duties in the field. This paper focuses to review the contents and methods of war history education which is being taught and to propose the new model for war history education for the students who are commissioned as officers after graduation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.180-180
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• 2016

보론이 도핑된 $3{\times}3cm$ 크기의 p 형 다결정 실리콘 기판의 표면을 경면연마한 후, 다이아몬드 입자의 seeding을 위해 슬러리 중 다이아몬드 분말의 입도를 5 nm로 고정하고 초음파 전처리 공정을 진행한 후, 다이아몬드 박막을 증착하였다. 다이아몬드 증착은 Microwave Plasma Chemical Vapor Deposition 장비를 이용하였으며, 공정 조건은 초기 진공 $10{\times}10^{-3}Torr$, 공정 가스 비율 $Ar:CH_4=200:2$, 가스 유량 202 sccm, 공정압력 90 Torr, 마이크로웨이브 파워 600 W, 기판 온도 $600^{\circ}C$이었다. 기판에 DC bias 전압을 인가하는 것을 공정 변수로 하여 0, -50, -100, -150, -200 V로 변화시켜가며, 0.5, 1, 2, 4 h 동안 증착을 진행하였다. 주사전자현미경과 XRD, AFM, 접촉각 측정 장비를 이용하여 증착된 다이아몬드 입자와 막의 특성을 분석하였다. 각 bias 조건에서 초기에는 다이아몬드 입자가 형성되어 성장되었다가 시간이 증가될수록 연속적인 다이아몬드 막이 형성되었다. Table 1은 각 bias 조건에서 증착 시간을 4 h까지 변화시키면서 얻은 다이아몬드 입자 또는 박막의 높이(두께)를 나타낸 것이다. 2 h까지의 공정 초기에는 bias 조건의 영향을 파악하기 어려운데, 이는 bias에 의한 과도한 이온포격으로 입자가 박막으로의 성장에 저해를 받는 것으로 사료된다. 증착시간이 4 h가 경과하면서 -150 V 조건에서 가장 두꺼운 막이 성장되었다. 이는 기판 표면을 덮은 다이아몬드 박막 위에서 이차 핵생성이 bias에 의해 촉진되기 때문으로 해석된다. -200 V의 조건에서는 오히려 막의 성장이 더 느렸는데, 이는 Fig. 1에 보이듯이 과도한 이온포격으로 Si/diamond 계면에서 기공이 형성된 것과 연관이 있는 것으로 보인다.