Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Mechanical Analysis on Uniformity in Copper Chemical Mechanical Planarization

Cu CMP에서의 연마 균일성에 관한 기계적 해석

  • 이현섭 (부산대학교 일반대학원 정밀기계공학과) ;
  • 박범영 (부산대학교 일반대학원 정밀기계공학과) ;
  • 정해도 (부산대학교 일반대학원 정밀기계공학과) ;
  • 김형재 (한국생산기술연구원 부산지역본부)
  • Published : 2007.01.01
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Abstract

Most studies on copper Chemical Mechanical Planarization (CMP) have focused on material removal and its mechanisms. Although many studies have been conducted on the mechanism of Cu CMP, a study on uniformity in Cu CMP is still unknown. Since the aim of CMP is global and local planarization, the approach to various factors related to uniformity in Cu CMP is essential to elucidate the Cu CMP mechanism as well. The main purpose of the experiment reported here was to investigate and mechanically analyze the roles of slurry components in the formation of the uniformity in Cu CMP. In this paper, Cu CMP was performed using citric acid($C_{6}H_{8}O_{7}$), hydrogen peroxide($H_{2}O_{2}$), colloidal silica, and benzotriazole($BTA,\;C_{6}H_{4}N_{3}H$) as a complexing agent, an oxidizer, an abrasive, and a corrosion inhibitor, respectively. All the results of this study showed that within-wafer non-uniformity(WIWNU) of Cu CMP could be controlled by the contents of slurry components.

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References

  1. C.-K., Hu, B. Luther, F. B. Kaufman, J. Hummel, C. Uzoh, and D. J. Pearson, 'Copper interconnection integration and reliability', Thin Solid Films, Vol. 262, Iss. 1-2, p. 84, 1995 https://doi.org/10.1016/0040-6090(94)05807-5
  2. S. P. Murarka, 'Metallization Theory and Practice for VLSI and ULSI', Butterworth-Heinemann, Boston, p. 100, 1993
  3. P. Wrschka, J. Hernandez, G. S. Oehrlein, and J. King, 'Chemical mechanical planarization of copper damascene structures', Journal of The Electrochemical Society, Vol. 147, No.2, p. 706, 2000 https://doi.org/10.1149/1.1393256
  4. J. Hernandez, P. Wrschka, and G. S. Oehrlein, 'Surface chemistry studies of copper chemical mechanical planarization', Journal of The Electrochemical Society, Vol. 148, No.7, p. 389, 2001 https://doi.org/10.1149/1.1377595
  5. T.-H. Tsai, Y.-F. Wu, and S.-C. Yen, 'Glycolic acid in hydrogen peroxide-based slurry for enhancing copper chemical mechanical polishing', Microelectronic Engineering, Vol. 77, Iss. 3-4, p. 193, 2005 https://doi.org/10.1016/j.mee.2004.10.008
  6. D. H. Kwon, H. J. Kim, H. D. Jeong, E. S. Lee, and Y. J. Shin, ' A study on the correlation between temperature and CMP characteristics', Journal of the Korea Society of Precision Engineering, Vol. 19, No. 10, p. 156, 2002
  7. W.-T. Tseng, Y.-H. Wang, and J.-H. Chin, 'Effects of film stress on the chemical mechanical polishing process', Journal of The Electrochemical Society, Vol. 146, No. 11, p. 4273, 1999 https://doi.org/10.1149/1.1392627
  8. H. J. Kim and H. D. Jeong, 'Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization', Journal of Electronic Materials, Vol. 33, No.1, 2004
  9. Y. Luo, T. Du, and V. Desai, 'Chemicalmechanical planarization of copper : The effect of inhibitor and complexing agent', Mat. Res. Soc. Proc., Vol. 767, p. F6.10.1, 2003
  10. Q. Luo and S. V. Babu, 'Dishing effects during chemical mechanical polishing of copper in acidic media', Journal of Electrochemical Society, Vol. 147, No. 12, p. G4639, 2000 https://doi.org/10.1149/1.1394116