• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.803-809
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• 2005

Cerium ammonium nitrate (CAN) and nitric acid was used an etchant and an additive for Ru etching and polishing. pH and Eh values of the CAN and nitric acid added chemical solution satisfied the Ru etching condition. The etch rate increased linearly as the concentration of CAN increased. Nitric acid added solution had the high etch rate. But micro roughness of etched surfaces was not changed before and after etching, The removal rate of Ru film was the highest in $1wt\%$ abrasive added slurry, and not increased despite the concentration of alumina abrasive increased to $5wt\%$. Even Ru film was polished by only CAN solution due to the friction. The highest removal rate of 120nm/min was obtained in 1 M nitric acid and $1wt\%$ alumina abrasive particles added slurry. The lowest micro roughness value was observed in this slurry after polishing. From the XPS analysis of etched Ru surface, oxide layer was founded on the etched Ru surface. Therefore, Ru was polished by chemical etching of CAN solution and oxide layer abrasion by abrasive particles. From the result of removal rate without abrasive particle, the etching of CAN solution is more dominant to the Ru CMP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1049-1055
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• 2004

Chemical Mechanical Polishing (CMP) is referred to as a three body tribological system, because it includes two solids in relative motion and the CMP slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason not only for the friction force but also for material removal during polishing, the friction force generated during CMP process was investigated with the change of abrasive size and concentration of CMP slurry. The threshold point of average coefficient of friction (COF) with increase in abrasives concentration during interlayer dielectric (ILD) CMP was found experimentally and verified mathematically based on contact mechanics. The predictable models, Mode I (wafer is in contact with abrasives and pad) and Mode II (wafer is in contact with abrasives only), were proposed and used to explain the threshold point. The average COF value increased in the low abrasives concentration region which might be explained by Mode I. In contrast the average COF value decreased at high abrasives concentration which might be regarded to as Mode II. The threshold point observed seemed to be due to the transition from Mode I to Mode II. The tendency of threshold point with the variation of abrasive size was studied. The increase of particle radius could cause contact status to reach transition area faster. The correlation between COF and material removal rate was also investigated from the tribological and energetic point of view. Due to the energy loss by vibration of polishing equipment, COF value is not proportional to the material removal rate in this experiment.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.9
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• pp.1105-1111
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• 2011

The objective of this study is to investigate the influence of surface roughness on the morphology of aluminum 6061-T6 alloy after irradiation with a Nd:YAG pulsed laser. The test specimen was prepared by a polishing process using a diamond paste ($1{\mu}m$) and emery polishing papers (#100, #220, #600, #2400) to obtain different initial surface roughness. After irradiation with ten pulsed-laser shots, the surface morphology was examined by using scanning electron microscopy (SEM), optical microscopy (OM), and atomic force microscopy (AFM). The diameter of the melted zone increased with the surface roughness because the multiple reflections and absorption of the laser beam occurred on the surface because of the surface roughness, so that the absorptance of the laser beam changed. This result was verified using the relative absorptance calculated from the diameter of the melted zone with the surface roughness and the diameter increased with the average surface roughness.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.11
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• pp.4732-4737
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• 2011

A standing grinder with a vacuum dust collection, which works grinding a surface and collecting dust occurred simultaneously, is needed to clean the surface before painting, or to remove a weld bead burr in the industrial field. In recent it trends to be compact and potable with high grinding and dust collection power, and low noise. As increasing these grinding and dust collection power, the noise and weight of standing grinder occurs an important problem. To solve these problem, an efficient cyclone separator was designed and developed by Ansys-CFX analysis and experiments. A weight of the developed grinder part was 5.9kg, which can be easily handled on standing by workers. and a noise level of the developed prototype was measured 69.9 dB(A).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1993.10a
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• pp.131-135
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• 1993

오늘날 전자산업, 광학기계,미세노즐 및 오리피스, 정밀공구,게이지, 고밀도 PCB 기판등 각종 산업에서 미세구멍 가공기술이 요구되고 있다. 이러한 구멍 가공에 사용될 수 있는 기술로는 드릴 가공의 기계적 가공방식 이외에 레이져가공,전자빔가공, 방전가공등의 열적가공방식과 전해가공,전해연마,화학부식의 화학적가공 방식이 있겠으나 생산성, 가공표면의 정도, 심혈가공의 어려움 등의 이유로 미세드릴을 이용한 기계적인 가공방법이 선호되고 있다. 본 연구에서는 미세구멍/가공시 가공토크에 미치는 중요 변수들의 영향을 실험을 통하여 조사하여 높은 절삭성을 발휘하는 동시에 공구의 파손도 피할 수 있는 조건을 제시하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.297-302
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• 2005

Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.309-313
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• 2006

Pad surface characteristics such as roughness, groove and wear rate of pad have a effect on the within wafer non-uniformity(WIWNU) in chemical mechanical polishing(CMP). Although WIWNU increases as the uniformity of roughness(Rpk: Reduced peak height) becomes worse in an early stage of polishing time, WIWNU decreases as non-uniformity of the Rpk value. Also, WIWNU decreases with the reduction of the pad stiffness, though original mechanical properties of pad are unchanged by the grooving process. In addition, conditioning process causes the inequality of pad wear during in CMP. The profile of pad wear generated by the conditioning process has a significant effect on the WIWNU. These experiments results could help to understand the effect of pad surface characteristics in CMP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.983-988
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• 2000

The leadframe of thin plate fabricated by stamping method generates a lot of burr and stress in the processing surface because of the mold. The electropolishing equipment was produced in order to increase accuracy and surface roughness for 42%Ni-Fe leadframe. An electrolyte consisted of phosphoric acid, ethylene glycol and deionized water. Experiments were accomplished as polishing conditions were changed such as current density, polishing time, electrode gap and sample shape. The burr from the cutting was eliminated and surface characteristics of high flatness and high luster wre obtained after electropolishing. In addition, the electroplishing had good characteristic in 1.0 A current density and 4㎜ of electrode spaces, and it was affected by the composition of electrolyte and the sample shape.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.272-277
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• 2004

The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5％ acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.