• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2000년도 제31회 춘계학술대회
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• pp.180-186
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• 2000

Friction materials with four different sizes of zircon - l${\mu}{\textrm}{m}$, 6${\mu}{\textrm}{m}$, 75${\mu}{\textrm}{m}$, 140${\mu}{\textrm}{m}$- were investigated to evaluate the size effects of abrasive particles used in the automotive brake pads on brake performance. Although the brake pads with the largest size of zircon showed a good frictional stability and low wear, rotors were severely abraded due to the aggressiveness of coarse Bircon. As the siBe of zircon decreased. friction force and the amplitude of friction coefficient increased. Considering the above results, abrasive materials were thought to destroy transfer film and the extent of the destruction depends on the size of zircon. The small size zircon was not effective in developing a transfer layer on the rotor surface while minimizing the damage on the counter surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.380-381
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• 한국생산제조학회지
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• 제20권5호
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• pp.535-540
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• 2011

It is well known that abrasive waterjet (AWJ) was developed as a kind of high-density energy processing technologies. AWJ is used to obtain cutting quality of various materials such as metal, ceramics, glass and composite materials within a short manufacturing time because of the characteristics of heatless and noncontact processing. However, surface roughness and dimension error like round, burr, taper vary severely according to the processing conditions such as pressure, cutting speed, orifice diameter, stand off distance and abrasive flow rate. In this paper, the effect of the shape of mixing chamber on surface quality is studied. Three types of mixing chamber - round, parabolic, elliptical - are suggested and each performance is compared to that of cylindrical mixing chamber experimentally. From the result, is proved to be the optimal mixing chamber in the aspect of surface quality the parabolic one.

• 한국정밀공학회지
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• 제32권1호
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• pp.69-74
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• 2015

Cadmium telluride (CdTe) is being developed for thin film of the X-Ray detector recently. But a rough surface of the CdTe should be improved for resolution and signal speed. This paper shows the study on the improvement of surface roughness and removal rate by applying Chemical Mechanical Polishing. The conventional potassium hydroxide (KOH) based colloidal silica slurry could not realize a mirror surface without physical defects, resulting in low material removal rate and many scratches on surface. In order to enhance chemical reaction such as form oxidized layer on the surface of cadmium telluride, we used hydrogen peroxide ($H_2O_2$) as an oxidizer. Consequently, in case of 3 wt% concentration of hydrogen peroxide, the highest MRR (938 nm/min) and the lowest surface roughness ($R_{p-v}=10.69nm$, $R_a=0.8nm$) could be obtained. EDS was also used to confirm the generated oxide of cadmium telluride surface.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권6호
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• pp.291-296
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• 2006

In this study, the sputtered BTO film was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO ($BaTiO_3$) thin film using the $BaTiO_3$-mixed abrasive slurry (BTO-MAS) was higher than that using the $TiO_2$-mixed abrasives slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%) below 5% was obtained in each abrsive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.112-112
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• 2008

최근 Ruthenium (Ru) 은 높은 화학적 안정성, 누설전류에 대한 높은 저항성, 저유전체와의 높은 안정성 등과 같은 특성으로 인해 금속층-유전막-금속층 캐패시터의 하부전극으로 각광받고 있다. 또한 Cu와의 우수한 Adhesion 특성으로 인해 Cu 배선에서의 Cu 확산 방지막으로도 주목받고 있다. 그러나 이렇게 형성된 Ru 하부전극의 각 캐패시터간의 분리와 평탄화를 위해서는 CMP 공정이 도입이 필요하다. 이러한 CMP 공정에 공급되는 Slurry 에는 부식액, pH 적정제, 연마입자 등이 첨가되는데 이때 연마입자가 응집하여 Slurry의 분산 안전성 저하에 영향을 줄수 있다. 이로 인해 응집된 Slurry는 Scratch와 Delamination 과 같은 표면 결함을 유발할 수 있으며, Slurry의 저장 안정성을 저하시켜 Slurry의 물리적 화학적 특성을 변화시킬 수 있다. 그리하여 본 연구에서는 Ru CMP Slurry에서의 Surfactant와 같은 분산 안정제에 따른 Surface tension, Zeta potential, Particle size, Sedimentation의 분석을 통해 Slurry 안정성에 대한 영향을 살펴보았다. 그 결과 pH9 조건의 31ppm Dispersant 농도에서 50%이상의 Sedimentation 상승효과를 얻을 수 있었다. 또한 선택된 Surfactant가 첨가된 Ru CMP Slurry를 제조하여 Ru wafer의 Static etch rate, Passivation film thickness 와 Wettability를 비교해 보았다. 그리고 CMP 공정을 실시하여 Ru의 Removal rate와 TEOS에대한 Selectivity를 측정해 보았다.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.759-764
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• 2003

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of roused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity (WIWNU) wore measured as a function of different slurry composition. As an experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt％ contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows , In tile first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saying of high costs of slurry.

• 한국기계가공학회지
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• 제5권3호
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• pp.65-70
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• 2006

The AWJM(Abrasive Water-jet Machining) technology is one of the cutting technologies, which can cut various materials with 2 or 3 times of the speed of sound. In this study, processing conditions such as jet-pressure, cutting speed, orifice diameter and stand-off distance, are used by following the design of experiments with 3 levels. Al6061 material which is normally applied on the field, is applied. Through the S/N ratio analysis with measured values, the optimization value of processing conditions to minimize the surface roughness and taper value is obtained. The order of significance is as follows; jet pressure, cutting speed, abrasive mixing ratio, orifice diameter and stand-off distance. RSM(Response Surface Method) is applied to find the optimal processing conditions to minimize both the surface roughness and the taper value by using jet pressure, cutting speed and abrasive mixing ratio.

• 한국정밀공학회지
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• 제18권3호
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• pp.53-60
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• 2001

Water jet cutting is a new technology using very high pressure water as a cutting tool. Water jet cutting system consists of water preparation part, pressure generation pate, cutting head, and motion part. A PC-based numerical controlled (PC-NC) X-Y table is developed and water get cutting system is installed thereon. Water jet machining is applicable to various kinds of materials ranging from soft materials such as rubber and meat to hard-to-cut materials such as titanium. This paper shows the application of the abrasive waterjet system to titanium cutting.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.88-88
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• 2007

Chemical mechanical polishing (CMP) 공정은 그 어원에서 알 수 있듯이 슬러리의 화학적인 요소와 웨이퍼에 가해지는 기계적 압력에 의해 결정되는 평탄화 기술이다. 최근, 금속배선공정에서 높은 전도율과 재료의 값이 싸다는 이유로 Cu률 사용하였으나, 디바이스의 구조적 특성을 유지하기 위해 높은 압력으로 인한 새로운 다공성 막(low-k)의 파괴와, 디싱과 에로젼 현상으로 인한 문제점이 발생하게 되었다. 이러한 문제점을 해결하고자, 본 논문에서는 Cu 표면에 Passivation layer를 형성 및 제거하는 개념으로 공정시 연마제를 사용하지 않으며, 낮은 압력조건에서 공정을 수행하기 위해, 전해질의 농도 변화에 따른 선형추의전압전류법과 순환전압전류법을 사용하여 전압활성화에 의한 전기화학적 반응이 어떤 영향을 미치는지 연구하였다.