• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.871-875
• /
• 2000

Effects of liquid crystal (LC) alignment using a in-situ photoalignment method by polarized UV exposure on a polyimide (PI) surface with medium side chain were studied. The generated pretilt angle in nematic(N) LC using a in-situ photoalignment method was smaller than that of a conventional photoalignment method for short UV exposure time. Also, the pretilt angle of NLC using a in-situ photoalignment method increases with increasing UV exposure time on the PI surfaces. Finally, the pretilt angle of NLC can be improved by annealing treatment.

• Proceedings of the KIEE Conference
• /
• 1999.07a
• /
• pp.486-488
• /
• 1999

This paper shows the form of the optimal solution and how to minimize energy of train driving control using SA(simulated annealing). In this paper, we consider the case where a train is to be driven by automatic operation mode along a non-constant gradient, curve and with speed limits. Using the combinational optimal technique, SA, we constructed optimal train driving strategy.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.11 no.6
• /
• pp.45-51
• /
• 2002

The existing methods to split overall gear ratio of the cylindrical multi-stage gear train have their own limitations to be used in practical design and are also problematic to be implemented in a formalized algerian. This paper proposes two types of new methods to find gear ratios best approximating the overall gear ratio. The proposed methods are quite general to be applied to the gear train having any number of stages, and offer a considerably good result in a very short time. The first method uses the random search method and the second one is based on the simulated annealing algorithm. The proposed algorithms are expected to be very useful not only as an independent program to split overall gear ratio, but also as a desist sub-module for the integrated desist system of multi-stage gear drives.

• Journal of the Semiconductor & Display Technology
• /
• v.13 no.1
• /
• pp.63-66
• /
• 2014

ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. However, off-current characteristics of ZnO thin-film transistor (TFT) need improvements. In this work we studied the variation in ZnO TFT current under different annealing conditions. Annealing usually modifies gas adsorption at grain boundaries of ZnO. When oxygen is adsorbed, electron density decreases due to strong electronegativity of the oxygen, and TFT current decreases as a result. Our experiments showed that current increased after vacuum annealing and decreased after air annealing. We explain that the change of off-current is caused by the desorption and adsorption of oxygen at the grain boundaries.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.50-51
• /
• 2002

최근 실온에서 약 40％ 이상의 높은 자기저항(magnetoresistance, MR)을 나타내는 자기 터널 접합(magnetic tunnel junction, MTJ)이 보고되면서 비휘발성 자기메모리로의 응용을 눈앞에 두고 있다.[1]. 이에 본 실험에서는 Substrate / Ta (base electrode) / NiFe / PtMn (AF pinning layer) / CoFe (pinned) / Ru / CoFe (fixed) / Al-O/ CoFe (free) / NiFe (free) / Ta & Ru (Capping Layer)과 같은 MTJ 증착 구조를 사용하여, MTJ의 보다 향상된 특성을 확보하기 위한 노력으로서 Al-O 두께, 어닐링 조건(Field Intensity ＆ Sequence)변화 등을 시도하였다. (중략)

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.8
• /
• pp.31-36
• /
• 2004

we developed a technique to manufacture more reliable polycrystalline silicon TFT-LCDs using UV cleaning and buffered oxide etch(BOE) cleaning which remove the native oxide of the silicon surface before laser annealing. To investigate the effects of pre-treatments on the surface roughness of polycrystalline silicon, we measured atomic force microscopy(AFM). Also the electrical characteristics of polysilicon TFTs, breakdown characteristic and switching Performance, were tested for various pre-treatment conditions and several locations in large glass substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.533-536
• /
• 1999

In this study, we investigated pretilt angle generation and liquid crystal alignment by UV light irradiation during imidization of polyimide. Generated pretilt angle of NLC by using in-situ UV photo-alignment method was smaller than that of the conventional UV photo-alignment method. Also, generated pretilt angle of NLC tends to increase by annealing. We found that in-situ UV photo-alignment method has higher thermal stability of LC alignment, but it has a disadvantage to control pretilt angle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.336-339
• /
• 2000

Effects of liquid crystal (LC) alignment using an in-situ photo-alignment method by linearly polarized UV exposure during imidization of polyirnide (PI) on the two kinds of PI surfaces with side chain were investigated. The generated pretilt angle in nematic (N) LC using an in-situ photo-alignment method was smaller than that of a conventional photo-alignment method for short UV exposure time. Also, the pretilt angle of the NLC using an in-situ photo-alignment method increases with increasing UV exposure time on the two kinds of the PI surfaces. Finally, the pretilt angle of NLC can be improved by annealing treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.1
• /
• pp.75-78
• /
• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.43 no.5
• /
• pp.789-794
• /
• 1994

In this study, the structural and microwave dilelectric properties of 0.15BaO-0.15SmS12TOSI3T-0.7TiOS12T ceramics with sintering and annealing conditions were investigated. In the specimen sintered at 1350 [$^{\circ}C$], dielectric constant and quality factor were good values of 80.19,2006 (fS10T=4.6851[GHz]). To improve the $\tau$S1fT of specimen which was manufactured by the optimumsintering condition (1350[$^{\circ}C$],2[Hr.]), annealed from 2[hr.] to 16[hr.] at the annealing temperature of 1200 [$^{\circ}C$]. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. In the specimen of 4[hr.] annealed, the temperature coefficient of resonant frequency was minimum value, and increased with increasing the annealing time.