• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.174-174
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• 2009

다양한 ITO타겟(doped Yb: 0, 0.57, 3.2 and 7.75at%)을 사용하여, DC 마그네트론 스퍼터링에 의해 폴리이미드 기판위에 증착한 ITO:Yb박막의 구조적, 전기적, 기계적 특성을 연구하였다. 증착된 박막내의 Yb 함량이 증가됨에 따라, 박막의 결정성이 감소되고, 표면조도와 기계적 성질이 향상됨을 확인 할 수 있었다. 비정질구조를 가지는 박막 중, Yb-doped 3.2at% ITO타겟으로 증착하고, $170^{\circ}C$에서 어닐링처리 하였을 때, 가장 낮은 비저항 $4.672{\times}10^{-4}{\Omega}cm$을 나타내었다. ITO:Yb 박막의 전기적 특성은 Hall 효과 측정장비, 박막의 결정구조는 X-선 회절 (XRD), 표면조도는 AFM 장비를 사용하여 측정하였다.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1762-1764
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• 1999

We investigated the annealing effect on generating pretilt angle and aligning liquid crystal (LC) using the photo-depolymerization reaction in this study. In case of rubbing polyimide (PI) surface with the side chain, pretilt angle tends to increase with increasing the annealing time. It is considered because the steric interaction is increased by annealing which cause the side chain to come back to original position. For obliquely irradiating ultraviolet (UV) light on PI surface, pretilt angle shows to $0^{\circ}$ and is increased by annealing. The pretilt angle in rubbed PI surface is much higher than in photo-aligned PI surface. It is attributed to the steric interaction and the number of LC molecular arrangement on azimuthal direction. In addition. in case of obliquely irradiating UV light on PI surface. it showed LC alignment to increase by annealing. It can be regarded due to the fact that the re-alignment of LC molecule is improved to residual polymer direction by annealing.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.41-45
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• 2004

P-type $Bi_{0.5}$$Sb_{1.5}$ $Te_3$ thin films were deposited by the flash evaporation technique, and their thermoelectric properties and electronic transport parameters were investigated. The effective mean free path model was adopted to examine the thickness effect on the thermoelectric properties. Annealing effects on the carrier concentration and mobility were also studied, and their variations were analyzed in conjunction with the antisite defects. Seebeck coefficient and electrical resistivity versus inverse thickness showed a linear relationship, and the effective mean free path was found to be 3150$\AA$. No phase transformation and composition change were observed after annealing treatment, but carrier mobility increased due to grain growth. Carrier concentration decreased considerably due to reduction of the antisite defects, so that electrical conductivity decreased and Seebeck coefficient increased. When annealed at 473 K for 1 hr, Seebeck coefficient and electrical conductivity were $160\mu$V/K and 610 $W^{-1}$ $cm^{ -1}$, respectively. Therefore, the thermoelectric quality factor were also enhanced to be $16\mu$W/cm $K^2$.>.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.11
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• pp.2313-2320
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• 2011

The management of a panel block shop in a shipyard is a complex process that entails the largest amount of work and in which many decisions are involved. Shipbuilders have considered the process as a bottleneck since every panel for every ship and offshore hull structure must be processed through the shop. In order to maximize process productivity, simulation-based ship production execution system(SPEXS) is proposed for panel block operations utilising discrete-event simulation and simulated annealing. An application of panel block assembly shop, called SPEX-Panel supports production planners by general dispatching rules and metaheuristics to make better scheduling decisions on the shop floor. In addition, the system will help increase productivity in the yard with continuous improvement.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.102-107
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• 2009

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and $300^{\circ}C$ using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at $300^{\circ}C$, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below $300^{\circ}C$. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at $300^{\circ}C$ was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.6
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• pp.1425-1431
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• 2013

We have measured the radiation-induced Bragg wavelength shift (BWS) of fiber Bragg grating (FBG) which was inscribed in Ge-doped core silica using a phase mask during irradiation up to a dose of 23 kGy and annealing effects after the gamma-exposure. For packaged FBG sensors, we observed the maximum radiation-induced BWS of about 91 pm during irradiation. Packaged FBG sensors also show higher radiation sensitivity above nearly a factor of two than non-packaged type sensor in the same condition.

• Journal of the Korean Society of Propulsion Engineers
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• v.4 no.2
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• pp.46-53
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• 2000

Hot forging of aluminum alloy has the bad machinability due to continuous chip formation caused from the ductility The bad machinability requires a labor and a high cost to produce final products after hot forging. In industrial field, T4 heat treatment is performed to improve the machinability, and the annealing and the cold sizing are followed. In this study, a series of heat treatments are introduced during hot forging operation without T4 heat treatment after forming so that it improves the machinability with reduction of the number of operations and machining cost. Instead of T4 heat treatment, water cooling and air cooling are tried and compared to find out an optimum cooling condition

• Journal of the Korean Society for Heat Treatment
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• v.25 no.5
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• pp.244-248
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• 2012

ITO/$TiO_2$ films were deposited by RF magnetron sputtering on glass substrates and then the effect of vacuum annealing on the structural, optical and electrical properties of the films was investigated. The structural, optical and electrical properties are strongly related to annealing temperature. The films annealed at $300^{\circ}C$ showed a grain size of 40.9 nm, which was larger than as-deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical resistivity decreased. The ITO/$TiO_2$ films annealed at $300^{\circ}C$ showed the highest optical transmittance of 81% and also showed the lowest electrical resistivity of $3.05{\times}10^{-4}{\Omega}cm$, in this study.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.2
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• pp.147-154
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• 1989

An effective placement of macro blocks having arbitrary width and height is very important in reducing the chip area and the signal delay. In this paper, we proposed a method of macro block placement to obtain the globally optimal placement using simulated annealing, and an efficient algorithm for eliminating the overlaps between the rectangular macro blocks which may remain even after the simulated annealing process is terminated. Each macro block was enlarged to take into account minimal routing area, and these macro blocks were compacted as much as possible during the placement. This procedure was implemented in C language running on MV10000/UNIX computer system, and good placements were obtained by applying this procedure to two circuits which were consisted of 50 and 160 macro blocks respectively. Several parameters giving great effects to final placements were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.474-478
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• 2017

We report on thin-film transistors based on $TiO_x$ pre-annealed by femtosecond laser pulses. A 30-nm thick $TiO_x$ active channel layer was initially deposited by an ALD system. The $TiO_x$ semiconducting films were annealed by irradiation with a femtosecond laser (power: $3W/cm^2$) for 5, 25, and 50s. Atomic force microscopy images revealed that the surface of a $TiO_x$ film without femtosecond laser pre-annealing was relatively rough, while after annealing with femtosecond laser pulses, the surface of the $TiO_x$ films became smooth. With increasing radiation time, the surrounding gas atmosphere could have a larger impact on the $TiO_x$ surface; meanwhile, the thin-film roughness decreased. Thin-film transistors with $TiO_x$ active channels pre-annealed at 50s exhibited good transfer characteristics and an on-to-off current ratio of ${\sim}10^3$.