Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Annealing Effect on TiOx Based Thin-Film Transistors with Atomic Layer Deposition

원자층 증착 기술을 이용한 TiOx 기반 TFT의 어닐링 효과

  • Kim, Han-Sang (College of Electrical and Computer Engineering, Chungbuk National University) ;
  • Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
  • 김한상 (충북대학교 전자정보대학) ;
  • 김성진 (충북대학교 전자정보대학)
  • Received : 2017.02.22
  • Accepted : 2017.04.23
  • Published : 2017.08.01
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Abstract

We report on thin-film transistors based on $TiO_x$ pre-annealed by femtosecond laser pulses. A 30-nm thick $TiO_x$ active channel layer was initially deposited by an ALD system. The $TiO_x$ semiconducting films were annealed by irradiation with a femtosecond laser (power: $3W/cm^2$) for 5, 25, and 50s. Atomic force microscopy images revealed that the surface of a $TiO_x$ film without femtosecond laser pre-annealing was relatively rough, while after annealing with femtosecond laser pulses, the surface of the $TiO_x$ films became smooth. With increasing radiation time, the surrounding gas atmosphere could have a larger impact on the $TiO_x$ surface; meanwhile, the thin-film roughness decreased. Thin-film transistors with $TiO_x$ active channels pre-annealed at 50s exhibited good transfer characteristics and an on-to-off current ratio of ${\sim}10^3$.

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