• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.41-42
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• 2005

The characteristics of ZnO films are reported depending on different deposition conditions for film bulk acoustic resonators (FBARs). The ZnO films have been deposited on Al films evaporated on p-type (100) silicon substrate by pulsed laser deposition (PLD) technique using a Nd:YAG laser. These films exhibit an electrical resistivity higher than $10^7$ $\Omega$m. X-ray diffraction measurements have shown that ZnO films are highly c-axis oriented with full width at half maximum (FWHM) below $0.5^{\circ}$. These results show the possibility of FBAR devices using by PLD.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.248-249
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• 2005

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.959-961
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• 1999

ZnO thin films are deposited by using an RF magnetron sputtering system. Structural and electrical properties are analyzed as a function of deposition conditions, such as RF power, Ar/($Ar+O_2$) ratio, and substrate temperature. The c-axial growth of ZnO is observed to be preferable to the $SiO_2$/Si substrate, rather than the Si substrate. By adding the oxygen gas during deposition, the electrical resistivity of films is increased, but the c-axial growth is inhibited. A pizoelectric resonator of Al/ZnO/Al is also fabricated to estimate the electric-mechanical coupling coefficient($k^2$) of ZnO film. The value of $k^2$ obtained from our work is about 10.14 %.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.467-468
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• 2006

In this work, we present the comparison between $d_{31}\;and\;d_{33}$ mode characterization using the PZT micro-actuator for large displacement. The PZT micro-actuator consisted of Si, PZT, and Pt layer on SOI wafer. The electrode shapes were laminated and interdigitated for $d_{31}\;and\;d_{33}$ mode, respectively. In order to characterize the actuation mode, we measured the displacement using laser interferometer. The maximum displacement of d31 mode was $12.2{\mu}m$ at 10V, the actuation characterization of d31 was better than that of d33 mode. We estimated that displacement of d33 mode would be larger than that of d31 above 30V.

• 한국전자파학회논문지
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• 제14권4호
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• pp.323-329
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• 2003

본 논문에서는 유전자 알고리즘을 이용한 FBAR(Thin-Film Bulk Acoustic Resonator)에서의 물질 상수 추출 기법을 제안하였다. 제안된 기법은 유전자 알고리즘을 적용하여 FBAR의 입력 임피던스로부터 물질 상수를 추출하는 방법이다. 유전자 알고리즘의 적합도 함수를 결정하기 위해 물질 상수 변화가 FBAR의 임피던스 특성에 미치는 영향을 알아본 후, FBAR의 입력 임피던스로부터 구해지는 직렬/병렬 공진 주파수와 FBAR 대역폭으로 적합도를 평가하였다. 유전자 알고리즘의 흐름도와 제안된 물질 상수 추출 과정에 대해 설명하였고, 본 기법의 타당성을 검증하기 위해 물질 상수 추출 결과를 제시하였다.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1060-1064
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• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.10-14
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• 2005

Zinc Oxide(ZnO) thin films on Si (100) substrates were deposited by RF magnetron reactive sputtering. The characteristics of zinc oxide thin films with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance were investigated. To analyze a crystallographic properties of the films, $\theta/2{\theta}$ mode X -ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on Ar/$O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7\;{\Omega}cm$ was obtained at a working pressure of 10 mTorr with Ar/$O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with Ar/$O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1549-1551
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• 1997

In this study, the $\beta$-Polyvinylidene fluoride($\beta$-PVDF) organic thin films were fabricated by physical vapor deposition method as one of the dry-processing methods and applying electric field during the vapor deposition. When the substrate temperature is $80^{\circ}C$, the PVDF organic thin films exhibit the characteristic absorption band of the $\beta$ forms $510cm^{-1}$, $602cm^{-1}$ and $1273cm^{-1}$, and the fraction of $\beta$ form crystals in the total crystalline content was 95%. The molecular structure of PVDF organic thin films were transformed from $\alpha$ to $\beta$ form with increasing of applied electric field and the control of substrate temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1651-1652
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• 2006

In this study, the 2-step methode by ALD equipment was used to improve the characteristics of ZnO thin films used in a piezoelectric layer when the FBAR devices of a SMR type are fabricated. The Height of formed buffer layer was $400{\AA}$ and ZnO thin film of $13600{\AA}$ was deposited by RF sputter on the buffer layer. When ZnO thin films are deposited, deposition conditions such as pressure, injection time of source and purge time were changed variously. The characteristics of piezoelectric layer such as a crystal orientation and micro-structure of deposited ZnO thin films were studied by SEM, AFM and XRD.

• 센서학회지
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• 제19권3호
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• pp.202-208
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• 2010

This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.