• Journal of the Microelectronics and Packaging Society
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• v.3 no.1
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• pp.11-24
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• 1996

부분압이 다른 여러 가지 반응성 가스분위기하에서 이른곤 이온을 이용하여 PC, PET PMMA 그리고 PTFE 폴리머 표면의 삼차 증류수에대한 진수성을 증대하였다. 폴리머 표면의 친수성의 변화는 여러 가지 반응성 가스 분위기하에서 아르곤 이온의 조사량을 1014 부터 1x1017cm2까지 변화하면서 조사하였다. 접촉감은 아르곤 이온이 조사되는 폴리머 표면 근처에 유입된 가스의 방응성(O2>N2>H2)에 따라 많이 감소하였다, 폴리머 표면에 형성된 친수성기는 XPS Cls, Ols, 그리고 Nls 스펙트럼을 분석하여 확인하였다. 표면 개질된 PC와 PTFE에 대한 Al 금속의 접착력 증대를 Scotch tape와 인장실험을 통하여 확인하였다. 접착 력 증가는 표면 에너지 중 polar force의 증가에 의한 것으로 입증되었다. 에너지를 가진 아 르곤 입자 폴리머 체인 그리고 반응성 가스 사이의 반응기구는 2단계 모델로 설명가능하였 는데 그 기구는 첫 번째 이온의 조사에 의한 불안정한 폴리머 체인의 형성과 두 번째 단계 로 이렇게 형성된 폴리머 체인과 반응성 가스들 사이의 화학반응으로 이루어진다. 질화아루 미늄의 표면을 산소분위기하에서 아르곤 빔을 조사하여 표면개질한후 AlON층이 새롭게 형 성된 것을 XPS를 이용하여 확인할수 있었다. 개질된 질화알루미늄과 구리금속 박막간의 접 착력을 scratch 실험을 통하여 조사하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.708-713
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer was fabricated. It Is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2 M was used for low voltage anodization under 100 V, the chromic acid with 0.1 M was used for high voltage anodization over 100 V. The nano-sized pores with diameter of $60\~120$ nm was obtained by low voltage anodization of $40\~80$ V and those of $200\~300$ nm was obtained by high voltage anodization of $140\~200$ V. The pore widening process was employed for obtaining the one-channel with flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1 M concentration to etching the barrier layer.

• Journal of Surface Science and Engineering
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• v.43 no.6
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• pp.278-282
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• 2010

In this research, the friction and wear characteristic behaviors of coating materials of TiAlN and CrAlN were investigated. The wear test was conducted in air and un-lubricated state using the reciprocating friction wear tester. Temperature were 50 and $120^{\circ}C$, and load were 3, 7, and 11 kgf for tests. By comparing the coefficient of friction and observing the wear microstructure, the friction and wear characteristic behaviors of TiAlN and CrAlN coating layers on SKD61 were investigated. The coefficient of friction of CrAlN coating was lower than that of TiAlN at all conditions. Therefore, CrAlN was suggested to be more advantageous coating than TiAlN for the extrusion mold of aluminum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.859-863
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• 2007

Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $4.6{\times}10^{10}/cm^2\;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for a ${\pm}1\;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.1-6
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• 2000

We prepared organic light-emitting-diodes (LEDs) with a squarylium(Sq)-doped aluminum quinoline(Alq3) emission layer by the vapor deposition method. We discussed their electro-luminescence(EL) and electrical properties. The EL from Sq had a peak wavelength of 670nm and a half-width of 30nm. Only the EL from So(purely red) could be observed at the doping concentration of over 15mol%, but the luminance were low (0.21cd/$m^2$, 0.1cd/$m^2$) and EL efficiency was under the $10^{-2}$W. Although Sq molecules seemed to act as trap site in Alq3 molecules, they acted as carrier drafts site at doping concentration of over 5mol%.

• Journal of Surface Science and Engineering
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• v.41 no.4
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• pp.129-133
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• 2008

Nitrogen and aluminum codoped ZnO(NAZO) thin films were grown on glass substrates with changing the nitrogen flow ratio by radio-frequency magnetron sputtering. The structural, optical, and electrical properties of the NAZO films were investigated. The surface morphologies and the structural properties of the thin films were analyzed by using the X-ray diffraction and scanning electron microscopy. The NAZO thin film, deposited at nitrogen flow ratio of 0%, showed a strongly c-axis preferred orientation and the lowest resistivity of $3.2{\times}10^{-3}{\Omega}cm$. The intensity of ZnO(002) diffraction peak was decreased gradually with increasing the nitrogen flow ratio. The optical properties of the films were measured by UV-VIS spectrophotometer and the optical transmittances for all the samples were found to be an average 90% in the visible range. Based on the transmittance value, the optical bandgap energy for the NAZO thin film deposited at nitrogen flow ratio of 0% was determined to be 3.46 eV. As for the electrical properties, the carrier concentration and the hall mobility were decreased, but the electrical resistivity was increased as the nitrogen flow ratio was increased.

• Proceedings of the KAIS Fall Conference
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• 2006.05a
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• pp.339-343
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• 2006

전기발광소자는 바이폴라소자로서 전자와 정공의 주입, 이동 및 재결합에 의하여 발광한다. 소자에 사용되는 발광층의 대표 물질인 $Alq_3$를 한층(single layer)만 사용하고 정공의 주입을 도와주기위하여 폴리테트라플로로에틸렌(테플론)층을 얇게 증착하여 두께 변화에 따른 소자의 전기적 발광 특성을 측정하였다. 테플론은 좋은 부도체 폴리머로서 정공 터널링 전류가 두께 2 nm에서 가장 크게 증가하였으며 효율도 최대에 이르렀다. 주사전자현미경을 이용하여 실리콘 기판에 증착시킨 테플론 박막의 조직을 조사한 결과 두꺼워 질수록 라멜라(섬유조직)가 발달함을 알 수 있었다. 전자 주입을 도와주는 터널링층으로서 알루미늄산화막을 $Alq_3$ 위에 3 ${\AA}$ 증착한 결과 전류와 효율이 더 증가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.329-334
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• 2008

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• Journal of the Korea Society of Computer and Information
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• v.10 no.1 s.33
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• pp.1-6
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• 2005

White light emission is very important for applying electroluminescent device to full display, backlight and illumination light source. In this letter, Multilayer molecular organic white-light-emitting device using thin nim of blue material nitro-DPVT with fluorescent dye Rubrene for an orange emission were fabricated. The basic structure of the fabricated device is a-NPD / nitro-DPVT / nitro- DPVT:Rubrene / BCP/ Alq3. Aluminum is used as the cathode material and ITO was anode material. The white light emission spectrum covers a wide range of the visible region and the Commission Internationale do I'E clairage (C.I.E.) coordinates of the emitted light was ((0.3347, 0.3515) at 14V. The turn voltage is as low as 2.5V and quantum efficiencies are $0.35\%$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.300-300
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• 2011

알루미늄을 이용한 배선은 반도체 소자가 초집적화와 초소고속화 됨에 따라, 피로현상과 지연시간 등 배선으로서의 많은 문제점을 가지고 있어, 차세대 배선 재료로서 전기적인 특성 등이 우수한 구리에 대한 연구가 많이 진행되고 있다. 하지만, 구리는 낮은 온도에서 확산이 잘되어 배선 층간의 절연에 문제점을 야기 시킨다. 따라서, 구리를 배선에 적용하여 신뢰성 있는 제품을 만들기 위해서는 확산방지막이 필요하다. 확산방지막은 집적화와 더불어 배선의 두께가 줄어 듦에 따라 소자의 특성에 영향을 미치지 않는 범위 내에서 저항은 낮고, 두께는 얇아야 하며, 높은 종횡비를 갖는 구조에서도 균일한 박막을 형성하여야 하므로, 원자층 증착공정을 이용한 연구가 주를 이루고 있다. 텅스텐 질화막을 이용한 확산방지막은 WF6 전구체를 이용한 보고가 많지만, 높은 증착 온도와 부산물로 인한 부식가능성 이라는 문제점을 안고 있다. 따라서 본 연구에서는, 기존의 할라이드 계열을 이용한 원자층 증착공정의 단점을 보완하기 위하여, 아마이드 계열의 전구체를 사용하여 텅스텐 질화막을 형성하였으며, 이를 통해 공정온도를 낮출 수 있었다.