• Title/Summary/Keyword: 스위칭기법

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Low-Power Sigma-Delta ADC for Sensor System (센서 시스템을 위한 저전력 시그마-델타 ADC)

  • Shin, Seung-Woo;Kwon, Ki-Baek;Park, Sang-Soon;Choi, Joogho
    • Journal of IKEEE
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    • v.26 no.2
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    • pp.299-305
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    • 2022
  • Analog-digital converter (ADC) should be one of the most important blocks that convert various physical signals to digital ones for signal processing in the digital signal domain. As most operations of the analog circuit for sensor signal processing have been replaced by digital circuits, high-resolution performance is required for ADC. In addition, low-power must be the critical issue in order to extend the battery time of mobile system. The existing integrating sigma-delta ADCs has a characteristic of high resolution, but due to its low supply voltage condition and advanced technology, circuit error and corresponding resolution degradation of ADC result from the finite gain of the operational amplifier in the integrator. Buffer compensation technique can be applied to minimize gain errors, but there is a disadvantage of additional power dissipation due to the added buffer. In this paper, incremental signal-delta ADC is proposed with buffer switching scheme to minimize current and igh-pass bias circuit to improve the settling time.

A Study on the Characteristics Analysis of LLC AC to DC High Frequency Resonant Converter capable of ZVZCS (ZVZCS가 가능한 LLC AC to DC 고주파 공진 컨버터의 특성 해석에 관한 연구)

  • Kim, Jong-Hae
    • Journal of IKEEE
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    • v.25 no.4
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    • pp.741-749
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    • 2021
  • This paper presents the current-fed type LLC AC to DC high frequency resonant converter capable of ZVZCS(Zero-Voltage and Zero-Current Switching). The current-fed type LLC AC to DC high frequency resonant converter proposed in this paper could operate not only in ZVS(Zero-Voltage Switching) operation by connecting the resonant capacitors(C1, C2) in parallel across the switching devices but also in ZCS(Zero-Current Switching) operation of the secondary diode. The ZVS and ZCS operations can reduce the turn-on loss of the switching devices and the turn-off loss of the secondary diodes, respectively. The circuit analysis of current-fed type LLC AC to DC high frequency resonant converter proposed in this paper is addressed generally by adopting the normalized parameters. The operating characteristics of proposed LLC AC to DC high frequency resonant converter were also evaluated by using the normalized control parameters such as the normalized control frequency(μ), the normalized load resistor(λ) and so on. Based on the characteristic values through the characteristics of evaluation, an example of the design method of proposed LLC AC to DC high frequency resonant converter is suggested, and the validity of the theoretical analysis is confirmed using the experimental results and PSIM simulation.

Controls Methods Review of Single-Phase Boost PFC Converter : Average Current Mode Control, Predictive Current Mode Control, and Model Based Predictive Current Control

  • Hyeon-Joon Ko;Yeong-Jun Choi
    • Journal of the Korea Society of Computer and Information
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    • v.28 no.12
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    • pp.231-238
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    • 2023
  • For boost PFC (Power Factor Correction) converters, various control methods are being studied to achieve unity power factor and low THD (Total Harmonic Distortion) of AC input current. Among them, average current mode control, which controls the average value of the inductor current to follow the current reference, is the most widely used. However, nowadays, as advanced digital control becomes possible with the development of digital processors, predictive control of boost PFC converters is receiving attention. Predictive control is classified into predictive current mode control, which generates duty in advance using a predictive algorithm, and model predictive current control, which performs switching operations by selecting a cost function based on a model. Therefore, this paper simply explains the average current mode control, predictive current mode control, and model predictive current control of the boost PFC converter. In addition, current control under entire load and disturbance conditions is compared and analyzed through simulation.

Fast Join Mechanism that considers the switching of the tree in Overlay Multicast (오버레이 멀티캐스팅에서 트리의 스위칭을 고려한 빠른 멤버 가입 방안에 관한 연구)

  • Cho, Sung-Yean;Rho, Kyung-Taeg;Park, Myong-Soon
    • The KIPS Transactions:PartC
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    • v.10C no.5
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    • pp.625-634
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    • 2003
  • More than a decade after its initial proposal, deployment of IP Multicast has been limited due to the problem of traffic control in multicast routing, multicast address allocation in global internet, reliable multicast transport techniques etc. Lately, according to increase of multicast application service such as internet broadcast, real time security information service etc., overlay multicast is developed as a new internet multicast technology. In this paper, we describe an overlay multicast protocol and propose fast join mechanism that considers switching of the tree. To find a potential parent, an existing search algorithm descends the tree from the root by one level at a time, and it causes long joining latency. Also, it is try to select the nearest node as a potential parent. However, it can't select the nearest node by the degree limit of the node. As a result, the generated tree has low efficiency. To reduce long joining latency and improve the efficiency of the tree, we propose searching two levels of the tree at a time. This method forwards joining request message to own children node. So, at ordinary times, there is no overhead to keep the tree. But the joining request came, the increasing number of searching messages will reduce a long joining latency. Also searching more nodes will be helpful to construct more efficient trees. In order to evaluate the performance of our fast join mechanism, we measure the metrics such as the search latency and the number of searched node and the number of switching by the number of members and degree limit. The simulation results show that the performance of our mechanism is superior to that of the existing mechanism.

A l0b 150 MSample/s 1.8V 123 mW CMOS A/D Converter (l0b 150 MSample/s 1.8V 123 mW CMOS 파이프라인 A/D 변환기)

  • Kim Se-Won;Park Jong-Bum;Lee Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.1
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    • pp.53-60
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    • 2004
  • This work describes a l0b 150 MSample/s CMOS pipelined A/D converter (ADC) based on advanced bootsuapping techniques for higher input bandwidth than a sampling rate. The proposed ADC adopts a typical multi-step pipelined architecture, employs the merged-capacitor switching technique which improves sampling rate and resolution reducing by $50\%$ the number of unit capacitors used in the multiplying digital-to-analog converter. On-chip current and voltage references for high-speed driving capability of R & C loads and on-chip decimator circuits for high-speed testability are implemented with on-chip decoupling capacitors. The proposed AU is fabricated in a 0.18 um 1P6M CMOS technology. The measured differential and integral nonlinearities are within $-0.56{\~}+0.69$ LSB and $-1.50{\~}+0.68$ LSB, respectively. The prototype ADC shows the signal-to-noise-and-distortion ratio (SNDR) of 52 dB at 150 MSample/s. The active chip area is 2.2 mm2 (= 1.4 mm ${\times}$ 1.6 mm) and the chip consumes 123 mW at 150 MSample/s.

A 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS Algorithmic A/D Converter (14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS 알고리즈믹 A/D 변환기)

  • Park, Yong-Hyun;Lee, Kyung-Hoon;Choi, Hee-Cheol;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.12 s.354
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    • pp.65-73
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    • 2006
  • This work presents a 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS algorithmic A/D converter (ADC) for intelligent sensors control systems, battery-powered system applications simultaneously requiring high resolution, low power, and small area. The proposed algorithmic ADC not using a conventional sample-and-hold amplifier employs efficient switched-bias power-reduction techniques in analog circuits, a clock selective sampling-capacitor switching in the multiplying D/A converter, and ultra low-power on-chip current and voltage references to optimize sampling rate, resolution, power consumption, and chip area. The prototype ADC implemented in a 0.18um 1P6M CMOS process shows a measured DNL and INL of maximum 0.98LSB and 15.72LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 54dB and 69dB, respectively, and a power consumption of 1.2mW at 200KS/s and 1.8V. The occupied active die area is $0.87mm^2$.

A Frequency Synthesizer for MB-OFDM UWB with Fine Resolution VCO Tuning Scheme (고 해상도 VCO 튜닝 기법을 이용한 MB-OFDM UWB용 주파수 합성기)

  • Park, Joon-Sung;Nam, Chul;Kim, Young-Shin;Pu, Young-Gun;Hur, Jeong;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.8
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    • pp.117-124
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    • 2009
  • This paper describes a 3 to 5 GHz frequency synthesizer for MB-OFDM (Multi-Band OFDM) UWB (Ultra- Wideband) application using 0.13 ${\mu}m$ CMOS process. The frequency synthesizer operates in the band group 1 whose center frequencies are 3432 MHz 3960 MHz, and 4488 MHz. To cover the overall frequencies of group 1, an efficient frequency planning minimizing a number of blocks and the power consumption are proposed. And, a high-frequency VCO and LO Mixer architecture are also presented in this paper. A new mixed coarse tuning scheme that utilizes the MIM capacitance, the varactor arrays, and the DAC is proposed to expand the VCO tuning range. The frequency synthesizer can also provide the clock for the ADC in baseband modem. So, the PLL for the ADC in the baseband modem can be removed with this frequency synthesizer. The single PLL and two SSB-mixers consume 60 mW from a 1.2 sV supply. The VCO tuning range is 1.2 GHz. The simulated phase noise of the VCO is -112 dBc/Hz at 1 MHz offset. The die area is 2 ${\times}$ 2mm$^2$.

A 14b 150MS/s 140mW $2.0mm^2$ 0.13um CMOS ADC for SDR (Software Defined Radio 시스템을 위한 14비트 150MS/s 140mW $2.0mm^2$ 0.13um CMOS A/D 변환기)

  • Yoo, Pil-Seon;Kim, Cha-Dong;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.4
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    • pp.27-35
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    • 2008
  • This work proposes a 14b 150MS/s 0.13um CMOS ADC for SDR systems requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC employs a calibration-free four-step pipeline architecture optimizing the scaling factor for the input trans-conductance of amplifiers and the sampling capacitance in each stage to minimize thermal noise effects and power consumption at the target resolution and sampling rate. A signal- insensitive 3-D fully symmetric layout achieves a 14b level resolution by reducing a capacitor mismatch of three MDACs. The proposed supply- and temperature- insensitive current and voltage references with on-chip RC filters minimizing the effect of switching noise are implemented with off-chip C filters. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates a measured DNL and INL within 0.81LSB and 2.83LSB, at 14b, respectively. The ADC shows a maximum SNDR of 64dB and 61dB and a maximum SFDR of 71dB and 70dB at 120MS/s and 150MS/s, respectively. The ADC with an active die area of $2.0mm^2$ consumes 140mW at 150MS/s and 1.2V.

A CMOS Readout Circuit for Uncooled Micro-Bolometer Arrays (비냉각 적외선 센서 어레이를 위한 CMOS 신호 검출회로)

  • 오태환;조영재;박희원;이승훈
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.40 no.1
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    • pp.19-29
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    • 2003
  • This paper proposes a CMOS readout circuit for uncooled micro-bolometer arrays adopting a four-point step calibration technique. The proposed readout circuit employing an 11b analog-to-digital converter (ADC), a 7b digital-to-analog converter (DAC), and an automatic gain control circuit (AGC) extracts minute infrared (IR) signals from the large output signals of uncooled micro-bolometer arrays including DC bias currents, inter-pixel process variations, and self-heating effects. Die area and Power consumption of the ADC are minimized with merged-capacitor switching (MCS) technique adopted. The current mirror with high linearity is proposed at the output stage of the DAC to calibrate inter-pixel process variations and self-heating effects. The prototype is fabricated on a double-poly double-metal 1.2 um CMOS process and the measured power consumption is 110 ㎽ from a 4.5 V supply. The measured differential nonlinearity (DNL) and integrat nonlinearity (INL) of the 11b ADC show $\pm$0.9 LSB and $\pm$1.8 LSB, while the DNL and INL of the 7b DAC show $\pm$0.1 LSB and $\pm$0.1 LSB.

A 2.5 V 10b 120 MSample/s CMOS Pipelined ADC with High SFDR (높은 SFDR을 갖는 2.5 V 10b 120 MSample/s CMOS 파이프라인 A/D 변환기)

  • Park, Jong-Bum;Yoo, Sang-Min;Yang, Hee-Suk;Jee, Yong;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.4
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    • pp.16-24
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    • 2002
  • This work describes a 10b 120 MSample/s CMOS pipelined A/D converter(ADC) based on a merged-capacitor switching(MCS) technique for high signal processing speed and high resolution. The proposed ADC adopts a typical multi-step pipelined architecture to optimize sampling rate, resolution, and chip area, and employs a MCS technique which improves sampling rate and resolution reducing the number of unit capacitor used in the multiplying digital-to-analog converter (MDAC). The proposed ADC is designed and implemented in a 0.25 um double-poly five-metal n-well CMOS technology. The measured differential and integral nonlinearities are within ${\pm}$0.40 LSB and ${\pm}$0.48 LSB, respectively. The prototype silicon exhibits the signal-to-noise-and-distortion ratio(SNDR) of 58 dB and 53 dB at 100 MSample/s and 120 MSample/s, respectively. The ADC maintains SNDR over 54 dB and the spurious-free dynamic range(SFDR) over 68 dB for input frequencies up to the Nyquist frequency at 100 MSample/s. The active chip area is 3.6 $mm^2$(= 1.8 mm ${\times}$ 2.0 mm) and the chip consumes 208 mW at 120 MSample/s.