• Title/Summary/Keyword: 소모전류

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A Study on Methodology to Improve the Power Factor of the High Power LED Module (고출력 LED 모듈 역률 개선 방법 연구)

  • Lho, Young Hwan
    • Journal of IKEEE
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    • v.18 no.3
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    • pp.335-340
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    • 2014
  • Recently, LED (Light Emitting Diode) becomes to be useful to apply for the lightening sources in electric systems and the lightening equipment since the power is less consumed with high efficiency, and the size and the weight of LED are small and light, respectively. The LED is controlled with constant current and SMPS (Switching Mode Power Supply). It is necessary for the LED manufacturer to secure the fundamental technology of designing LED chip, and to study the methodology to improve the power factor (PF) and to design the operational circuit for the development of LED to reduce the power loss in the application of LED lightening. The direct AC (Alternating Current) LED driving circuit, HV9910, is widely used in the industry field. In this paper, it is to evaluate the improved methodology for the power factor and efficiency through simulations when PFC (Power Factor Correction) and Noise Filter are added to HV9910.

A 70/140 GHz Dual-Band Push-Push VCO Based on 0.18-㎛ SiGe BiCMOS Technology (0.18-㎛ SiGe BiCMOS 공정 기반 70/140 GHz 듀얼 밴드 전압 제어 발진기)

  • Kim, Kyung-Min;Kim, Nam-Hyung;Rieh, Jae-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.2
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    • pp.207-212
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    • 2012
  • In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

A Study on the Material Characteristics of Contacts on Bias Track Relay (바이어스 궤도계전기 접점의 재질 특성에 관한 연구)

  • Kim, Hee-Dae;Lee, Sung-Il
    • Journal of the Korean Society for Railway
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    • v.15 no.6
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    • pp.597-603
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    • 2012
  • The cases for selecting contact materials of Ag and AgC for Bias Track Relay are the studies and their safety evaluations are proposed in this paper. The welding at the relative low current has occurred in Ag contacts, but the one has not occurred in AgC contacts although the high currents flow since it has an excellent temperature characteristic. In the repetitive switching experiment, more unstable resistance and transfer phenomena has occurred in contacts as the switching numbers of AgC contacts increase, which results in more consumption of contacts. In the experiments, there exists a trade off relationship between welding and resistance variation. AgC contacts have excellent characteristics in welding, but the caution is required in using them since a lot of repetition switching produces much resistance variation. However, Ag contacts have excellent characteristics in repetitive switching, but weak ones in welding.

900MHz RFID Passive Tag Frontend Design and Implementation (900MHz 대역 RFID 수동형 태그 전치부 설계 및 구현)

  • Hwang, Ji-Hun;Oh, Jong-Hwa;Kim, Hyun-Woong;Lee, Dong-Gun;Roh, Hyoung-Hwan;Seong, Yeong-Rak;Oh, Ha-Ryoung;Park, Jun-Seok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.7B
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    • pp.1081-1090
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    • 2010
  • $0.18{\mu}m$ CMOS UHF RFID tag frontend is presented in this paper. Several key components are highlighted: the voltage multiplier based on the threshold voltage terminated circuit, the demodulator using current mode, and the clock generator. For standard compliance, all designed components are under the EPC Global Class-1 Generation-2 UHF RFID protocol. Backscatter modulation uses the pulse width modulation scheme. Overall performance of the proposed tag chip was verified with the evaluation board. Prototype Tag Chip dimension is neary 0.77mm2 ; According to the simulation results, the reader can successfully interrogate the tag within 1.5m. where the tag consumes the power about $71{\mu}W$.

Design of The 10bit 80MHz CMOS D/A Converter with Switching Noise Reduction Method (스위칭 잡음 감소기법을 이용한 10비트 80MHz CMOS D/A 변환기 설계)

  • Hwang, Jung-Jin;Seon, Jong-Kug;Park, Li-Min;Yoon, Kwang-Sub
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.6
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    • pp.35-42
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    • 2010
  • This paper describes a 10 bit 80MHz CMOS D/A converter for wireless communication system. The proposed circuit in the paper is implemented with a $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process. The architecture of the circuit consists of the 4bit LSB with binary decoder, and both the 3bit ULSB and the 3bit MSB with the thermometer decoder. The measurement results demonstrates SFDR of 60.42dBc at sampling frequency 80MHz, input frequency 1MHz and ENOB of 8.75bit. INL and DNL have been measured to be ${\pm}$0.38LSB and ${\pm}$0.32LSB and glitch energy is measured to be 4.6$pV{\cdot}s$. Total power dissipation is 48mW at 80MHz(maximum sampling frequency) with a single power supply of 1.8V.

Low Power 4-Gb/s Receiver for GND-referenced Differential Signaling (접지기반 차동신호 전송을 위한 저전력 4-Gb/s 수신단 설계)

  • Lee, Mira;Kim, Seok;Jeong, Youngkyun;Bae, Jun-Han;Kwon, Kee-Won;Chun, Jung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.9
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    • pp.244-250
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    • 2012
  • This paper describes a 4-Gb/s receiver circuit for a low-swing ground-referenced differential signaling system. The receiver employs a common-gate level-shifter and a continuous linear equalizer which compensates inter-symbol-interference (ISI) and improves voltage and timing margins. A bias circuit maintains the bias current of the level-shifter when the common level of the input signal changes. The receiver is implemented with a low-power 65-nm CMOS technology. When 4-Gb/s 400mVp-p signals are transmitted to the receiver through the channel with the attenuation of -19.7dB, the timing margin based on bit error rate (BER) of $10^{-11}$ is 0.48UI and the power consumption is as low as 0.30mW/Gb/s.

Clothing Management System Using the Smart Hanger Embedded RFID (RFID가 내장된 스마트 옷걸이를 이용한 의류 관리 시스템)

  • Chung, Sung Boo
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.8
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    • pp.185-194
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    • 2014
  • In this paper, we proposed the clothing management system using the smart hanger. Proposed system consists of smart hanger, base module, and server, and the smart hanger consists of MCU, LED, RFID reader, RF chip, ring sensor, and battery. The smart hanger reads the RFID tag attached to the clothes and wirelessly transmitted to the server. The server associated base module communicates with the smart hanger and transmits information to the server. The server manages clothing through the DB, and can display various information through the web page and the smart phone. In order to verify the usefulness of the proposed system, we did experiment with the management system for clothing store and laundry where using a lot of hangers. Performance tests of the smart hanger are applied to check the current consumption and can be predicted the battery life with the proposed low power algorithm. The clothing store management system can be increased sales and convenience of the consumer. The laundry management system can be increased the efficiency of laundry category and convenience of the consumer.

A Tunable Band-Pass Filter for Multi Bio-Signal Detection (대역폭 조정 가능한 다중 생체 신호 처리용 대역 통과 필터 설계)

  • Jeong, Byeong-Ho;Lim, Shin-Il;Woo, Deok-Ha
    • Journal of IKEEE
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    • v.15 no.1
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    • pp.57-63
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    • 2011
  • This paper presents a tunable band pass filter (BPF) for multi bio-signal detection. The bandwidth can be controlled by the bias current of transconductance (gm), while conventional BPF exploited switchable capacitor array for band selection. With this design technique, the die area of proposed BPF reduced to at least one tenth the area of conventional design. The simulation results show the high cut-off frequency tuning range of from 100Hz to 1Khz. The circuit was implemented with a 0.18um CMOS standard technology. Total current consumption is 1uA at the supply voltage of 1V with sub-threshold design technique.

Design of a Digitally Controlled LC Oscillator Using DAC for WLAN Applications (WLAN 응용을 위한 DAC를 이용한 Digitally Controlled LC Oscillator 설계)

  • Seo, Hee-Teak;Park, Jun-Ho;Kwon, Duck-Ki;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.15 no.1
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    • pp.29-36
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    • 2011
  • Dithering scheme has been widely used to improve the resolution of DCO(Digitally Controlled Oscillator) in conventional ADPLLs(All Digital Phase Locked Loop). In this paper a new resolution improvement scheme is proposed where a simple DAC is employed to overcome the problems of dithering scheme. A 2.4GHz LC-based DCO has been designed in a $0.13{\mu}m$ CMOS process with an enhanced frequency resolution for wireless local area network applications. It has a frequency tuning range of 900MHz and a resolution of 58.8Hz. The frequencies are controled by varactors in coarse, fine, and DAC bank. The DAC bank consists of an inversion mode NMOS varactor. The other varactor banks consist of PMOS varactors. Each varactor bank is controlled by 8bit digital signal. The designed DCO exhibits a phase noise of -123.8dBc/Hz at 1MHz frequency offset. The DCO core consumes 4.2mA from 1.2V supply.

A 24 GHz I/Q LO Generator for Heartbeat Measurement Radar System (심장박동 측정 레이더를 위한 24GHz I/Q LO 발생기)

  • Yang, Hee-Sung;Lee, Ockgoo;Nam, Ilku
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.11
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    • pp.66-70
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    • 2016
  • This paper presents an 24 GHz I/Q LO generator for a heartbeat measurement radar system. In order to improve the mismatch performance between I and Q LO signals against process variation, a 24 GHz I/Q LO generator employing a low-pass phase shifter and a high-pass phase shifter composed of inductors and capacitors is proposed. The proposed 24 GHz I/Q LO generator consists of an LO buffer, a low-pass phase shifter and a high-pass phase shifter. It was designed using a 65 nm CMOS technology and draws 8 mA from a 1 V supply voltage. The proposed 24 GHz I/Q LO generator shows a gain of 7.5 dB, a noise figure of 2.3 dB, 0.1 dB gain mismatch and $4.3^{\circ}$ phase mismatch between I and Q-path against process and temperature variations for the operating frequencies from 24.05 GHz to 24.25 GHz.