• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.6
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• pp.27-27
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• 2002

In this paper, the LPA(Linear Power Amplifier) using new analog feedforward linearizer for IMT-2000 frequency band(2110MHz∼2170MHz) is proposed and fabricated. The designed analog feedforward linearizer system possessing the characteristics of stable operation for input power variation is simple structure and small size. When two-tones in IMT-2000 frequency band are applied to an amplifier, this LPA have the average output power is about 30W and the IMD value is below about 60dBc without correcting the circuit. In camparision with an amplifier without feedforward system at the same output power, the supposed analog feedforward linear amplifier posseses improved the IMD characteristics of over 23dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.6
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• pp.285-291
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• 2002

In this paper, the LPA(Linear Power Amplifier) using new analog feedforward linearizer for IMT-2000 frequency band(2110MHz∼2170MHz) is proposed and fabricated. The designed analog feedforward linearizer system possessing the characteristics of stable operation for input power variation is simple structure and small size. When two-tones in IMT-2000 frequency band are applied to an amplifier, this LPA have the average output power is about 30W and the IMD value is below about 60dBc without correcting the circuit. In camparision with an amplifier without feedforward system at the same output power, the supposed analog feedforward linear amplifier posseses improved the IMD characteristics of over 23dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.4
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• pp.65-71
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• 2007

Doherty amplifier has more efficiency and distortion than general amplifier. These distortion classified amplitude distortion and phase distortion, memory effect distortion. This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a doherty amplifier's distortion generation and suggests thermal memory effect compensator for pre-distorter. Also this paper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. The parameters of suggested model suppress thermal memory effects doherty amplifier with pre-distorter. Pre-distorter with electrothermal memory effect compensator for doherty amplifier enhanced ACLR performance about 22 dB than general doherty amplifier. Experiment results were mesured by 50W LDMOS Doherty amplifier and pre-distorter with electrothermal memory effect compensator was simulated by ADS.

• Journal of Advanced Navigation Technology
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• v.10 no.2
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• pp.167-172
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• 2006

In this paper, the 25W power amplifier for UHF band radio transceiver has been designed and realized. The power amplifier was composed of drive, power amplifier and control stages. Feedback topology and coaxial line baluns were used for wide band operation. The VDMOS, which has reliable performance for linearity and efficiency, was used for power device and designed to operate as push-pull amplification at Class AB Bias. The power amplifier designed in such a way was found to show stable AM modulation performance when voice signal was detected at the gate stage, with being designed and realized to meet output specifications of commercial air traffic control transmitter.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.9
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• pp.1793-1801
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• 1994

In this paper, a new method for predicting the 1 dB gain compression point of cascaded N amplifiers is proposed. With the proposed method, the transfer function of each amplifier is derived from scalar data available from the manufacturers data sheet and all transfer functions are producted with scalar in order to also derive the overall transfer function of the subsystem under the assumption that the input and output port of each amplifier are matched. Therefore, the 1 dB gain compression point of the subsystem can be predicted or estimated, reversely, utilizing the overall transfer function obtained with the proposed method. The proposed method can be used irrespective of the number of scalar data but, in this paper, it is analyzed only with two scalar data (linear power gain and 1 dB gain compression point) and three scalar data(linear power gain, 1 dB and 0.5 dB gain compression points). With two sample amplifiers operated in Ku-band, the predicted results by the proposed and previous method, respectively, and the experimental results are together presented in order to confirm its utility.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.7
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• pp.807-815
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• 2019

In this paper, we design a power amplifier to support quad-band in wireless communication devices using RF CMOS 180-nm process. The proposed power amplifier consists of low-band 0.9, 1.8, and 2.4 GHz and high-band 5 GHz. We proposed a structure that can support each input matching network without using a switch. For maximum linear output power, the output matching network was designed for impedance conversion to the power matching point. The fabricated quad-band power amplifier was verified using modulation signals. The long-term evolution(LTE) 10 MHz modulated signal was used for 0.9 and 1.8 GHz, and the measured output power is 23.55 and 24.23 dBm, respectively. The LTE 20 MHz modulated signal was used for 1.8 GHz, and the measured output power is 22.24 dBm. The wireless local area network(WLAN) 802.11n modulated signal was used for 2.4 GHz and 5.0 GHz. We obtain maximum linear output power of 20.58 dBm at 2.4 GHz and 17.7 dBm at 5.0 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.78-83
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• 2010

In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.5
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• pp.798-805
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• 2006

I evaluate the BER performance of downlink OFDMA systems in time variant Rayleigh Doppler fading channel, considering the carrier frequency offset and the nonlinear high power amplifier. I obtain the required output back-off of the nonlinear amplifier and value of frequency offset for good BER performance. And I also analyze the BER degradation upon Doppler fading channel.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.12
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• pp.2391-2397
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• 2007

I evaluate the BER performance of uplink OFDMA systems in time variant Rayleigh Doppler fading channel, considering the carrier frequency offset and the nonlinear high power amplifier. I obtain the required output back-off of the nonlinear amplifier and value of frequency offset for good BER performance. And I also analyze the BER degradation upon Doppler fading channel.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.129-133
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• 2006

In spite of the advantage of simple circuit, small size, and low price, predistortered power amplifier does not satisfy the IMD specification at low power range because of an IMD hump characteristic. To reduce the performance degradation by IMD hump, the method which is to control the operating point of amplifier according to its output power is presented. This method using envelope detection bias control is applied to the implemented class AB predistortered 16 W power amplifier. The measured result shows 10 dB improvement of $3^{rd}$ IMD performance in wide dynamic range of output power.