• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.210-210
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• 2010

저항 구조를 가진 유기 쌍안정성 소자는 비휘발성 기억 소자 중에서 구조가 간단하고 제작비용이 저렴하며 플렉시블이 용이한 장점 때문에 많은 연구가 진행되고 있다. 유기물/무기물 복합재료를 사용한 유기 쌍안정성 소자 제작에 대한 연구는 많이 진행되어 왔지만, 넓은 에너지 밴드 갭을 가진 $SnO_2$ 나노 입자가 삽입된 고분자 박막을 기반으로 제작한 유기 쌍안정성 소자에 대한 연구는 상대적으로 미흡하다. 본 연구에서는 Poly(methyl methacrylate) (PMMA) 박막 안에 분산된 $SnO_2$ 나노 입자를 사용하여 제작한 유기 쌍안정성 소자의 전기적인 특성을 관찰하였다. 소자를 제작하기 위해 나노 입자의 전구체인 Tin 2-ethylhexanoate (95%) 2.4 mmol을 dibutyl ether (99.3%) 10 ml에 용해시킨 후, 용매열 화학적 방법을 사용하여 용매 안에서 $SnO_2$ 나노 입자를 합성하였다. 용매 안에 들어있는 1 wt%의 $SnO_2$ 나노 입자와 100 mg의 PMMA를 2 ml의 클로로벤젠에 용해하여 고분자 용액을 제작하였다. 하부 전극 역할을 하는 indium tin oxide가 증착된 유리 기판 위에 고분자 용액을 스핀 코팅하고, 열을 가해 용매를 제거하여 $SnO_2$ 나노 입자가 분산되어 있는 PMMA 박막을 형성하였다. 그 위에 Al 전극을 증착하여 기억 소자를 완성하였다. 제작된 유기 쌍안정성 소자의 전류-전압 (I-V) 측정 결과에서는 동일한 전압에서 서로 크기가 다른 전류가 흐르는 I-V 곡선의 히스테리시스 특성이 나타났다. 그러나 $SnO_2$ 나노 입자가 없는 PMMA 박막으로 형성된 유기 쌍안정성 소자에서는 I-V 곡선의 히스테리시스 특성이 나타나지 않았다. 따라서 PMMA 박막 안에 삽입된 $SnO_2$ 나노 입자가 유기 쌍안정성 소자의 메모리 효과에 결정적인 영향을 준 것을 알 수 있었다. 전류-시간 측정 결과에서는 소자의 ON/OFF 비율이 시간에 따라 큰 변화 이 없이 1000 사이클 이상 지속적으로 유지 하고 있음을 보여 줌으로써 유기 쌍안정성 소자를 장시간 사용할 수 있음을 나타내 주었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.41-50
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• 2009

The flash memory has many advantages such as low power consumption, strong shock resistance, fast I/O and non-volatility. And it is increasingly used in the mobile storage device. Many researchers are studying the YAFFS, NAND flash file system, which is widely used in the embedded device. However, the existing YAFFS has two problems. First, it takes long time to mount the YAFFS file system because it scans whole spare areas in all pages. Second, the cleaning policy of the YAFFS does not consider the wear-leveling so that it cannot guarantee the duration of data completely. In order to solve these problems, this paper proposes a new content-based YAFFS that consists of a mounting time reduction technique and a content-cleaning policy by using content-based block management. The proposed method only scans partial spare areas of some special pages and provides the block swapping which enables the wear-leveling of data blocks. We performed experiments to compare the performance of the proposed method with those of the JFFS2 system and YAFFS system. Experimental results show that the proposed method reduces the average mounting time by 82.2% comparing with JFFS2 and 42.9% comparing with YAFFS. Besides, it increases the life time of the flash memory by 35% comparing with the existing YAFFS whereas no overheat is added.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.1-8
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• 2002

In order to study electric properties of (Pb$\_$0.9/La$\_$0.1/)Ti$\_$0.975/O$_3$(PLT (10)) films with varying excess lead concentration (7.5, 10, 12.5, 15 ㏖% excess lead), the PLT films were deposited by sol-gel process. DTA analyses reveal that the crystallization temperature of the precursor powers decreased with increasing amount of excess lead. XRD patterns of PLT reveal pure perovskite structure and the preferred orientation increased with increasing Pb content in the films. With increasing amount of excess P$\_$b/, the relative permittivity ($\xi$$\_$r/) increased and leakage current density at 100 ㎸/cm transformed 4.01$\times$10$\^$-5/, 2.42$\times$10$\^$-6/, 1.27$\times$10$\^$-6/, 1.56$\times$10$\^$-6/A/㎠ respectively. In the results of hysteresis loops measured at 166 kV/cm, the remanent polarization (P$\_$r/) and the coercive field (E$\_$c) are 6.36$\mu$C/cm and 58.7 ㎸/cm, respectively (at 12.5 ㏖% excess P$\_$b/) With increasing amount of excess Pb, the remanent polarization for PLT thin film degraded to about 44%, 27%, 15%, 16% of the initial value after 10$\^$9/ cycles./TEX>) With increasing amount of excess Pb, the remanent polarization for PLT thin film degraded to about 44%, 27%, 15%, 16% of the initial value after $10^{9}$ cycles.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.17 no.4
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• pp.266-274
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• 2024

In this paper, we designed a low-area 32-bit PF (Poly-fuse) OTP IP, a non-volatile memory that stores data required for analog circuit trimming and calibration. Since one OTP cell is constructed using two PFs in one select transistor, a 1cell-2bit multibit PF OTP cell that can program 2bits of data is proposed. The bitcell size of the proposed 1cell-2bit PF OTP cell is 1/2 of 12.69㎛ × 3.48㎛ (=44.161㎛2), reducing the cell area by 33% compared to that of the existing PF OTP cell. In addition, in this paper, a new 1 row × 32 column cell array circuit and core circuit (WL driving circuit, BL driving circuit, BL switch circuit, and DL sense amplifier circuit) are proposed to meet the operation of the proposed multbit cell. The layout size of the 32bit OTP IP using the proposed multibit cell is 238.47㎛ × 156.52㎛ (=0.0373㎛2) is reduced by about 33% compared that of the existing 32bit PF OTP IP using a single bitcell, which is 386.87㎛ × 144.87㎛ (=0.056㎛2). The 32-bit PF OTP IP, designed with 10 years of data retention time in mind, is designed with a minimum programmed PF sensing resistance of 10.5㏀ in the detection read mode and of 5.3 ㏀ in the read mode, respectively, as a result of post-layout simulation of the test chip.

• Journal of Internet Computing and Services
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• v.12 no.4
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• pp.157-172
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• 2011

The latest active studies on distributed OLAP to adopt a distributed environment are mainly focused on DHT P2P OLAP and Grid OLAP. However, these approaches have its weak points, the P2P OLAP has limitations to multidimensional range queries in the cloud computing environment due to the nature of structured P2P. On the other hand, the Grid OLAP has no regard for adjacency and time series. It focused on its own sub set lookup algorithm. To overcome the above limits, this paper proposes an efficient central managed P2P approach for a cloud computing environment. When a multi-level hybrid P2P method is combined with an index load distribution scheme, the performance of a multi-dimensional range query is enhanced. The proposed scheme makes the OLAP query results of a user to be able to reused by other users' volatile cube search. For this purpose, this paper examines the combination of an aggregation cube hierarchy tree, a quad-tree, and an interval-tree as an efficient index structure. As a result, the proposed cloud P2P OLAP scheme can manage the adjacency and time series factor of an OLAP query. The performance of the proposed scheme is analyzed by a series of experiments to identify its various characteristics.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1066-1072
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• 2005

The effects of La concentration in PLZT (z/30/70) thin film prepared by sol-gel method are investigated for the NVFRAM application. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent and the leakage current density at 100 kV/cm decrease from 0.075 to 0.025 and from $5.83{\times}10^{-7}\;to\;1.38{\times}10^{-7}\;A/cm^2,$ respectively. In the results of hysteresis loops measured at 175 kV/cm, the remanent polarization and the coercive field decrease from 20.8 to $10.5{\mu}C/cm^2$ and from 54.48 to 32.12 kV/cm, respectively, with the increase of La concentration from 0 to $10mol\%.$ After applying for $10^9$ cycles of square pulses with ${\pm}5V$ height, the remanent polarization of the PLZT (10/30/70) thin film decreases $40\%$ from the initial state, while that of the PLZT (10/30/70) thin film decreases $64\%.$.