• Journal of the Korea Concrete Institute
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• v.21 no.5
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• pp.565-572
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• 2009

In this study, corrosion resistance of palm oil fuel ash (POFA) concrete as a blended concrete is evaluated by using electrochemical technique. The POFA is an industrial byproduct obtained from fuel ash after extracting palm oil from palm-tree. In order to obtain basic material characteristics of the POFA concrete, tests on compressive strength, slump, weight loss, bleeding and expansion ratio were carried out the early-aged POFA concrete. On the other hand, durability characteristics, both chloride penetration and carbonation depth test, were also conducted. Finally, corrosion resistance were evaluated by applying electro-chemical artificial crack healing technique, and the tests on the impressed voltage characteristic, galvanic current and linear polarization resistance. From the experimental results, it was found that long-term strength, bleeding, lower slump ratio, expansion ratio, chloride penetration, carbonation and corrosion resistance were improved by using the POFA due to activated pozzolanic reaction. It can be also mentioned that POFA concrete has a potential to be used as a cementitious binder for green-recycling resources.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.315-320
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• 2000

We have investigated the crystal structure and electrical properties of Pt/SBT/$ZrO_2$/Si (MFIS) and Pt/SBT/Si (MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$ZrO_2$/Si structure had larger grain than that of SBT/Si structure. $ZrO_2$ film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier by the analysis of AES. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$ZrO_2$/Pt/$SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-volt-age characteristics, the memory windows of Pt/SBT (210 nm)/$ZrO_2$ (28 nm)/Si structure were in the range of 1~l.5 V at the applied voltage of 4~6 V. The current densities of Pt/SBT/ZrO$_2$/Si with as -deposited Pt electrode and annealed at $800^{\circ}C$ in $O_2$ambient were $8\times10^{-8} A/\textrm{cm}^2$ and $4\times10^{-8}A/\textrm{cm}^2$ , respectively.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.17-23
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• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.143-151
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• 1994

On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.5
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• pp.495-503
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• 1997

In this paper, the E-polarized electromagnetic scattering problems by a resistive strip grating with tapered resistivity on 3 dielectric layers are analyzed to find out the effects for the tapered resistivity of resistive strip and the relative permittivity and thickness of 3 die- lectric layers by applying the Fourier-Galerkin moment methods. The induced surface current density is expanded in a series of Jacobi-polynomial ${P^{(\chi,\beta)}}_p$(.) of the order $\alpha$= 0 and $\beta$=1 as a kind of orthogonal polyomians, and the tapered resistivity assumes to vary linearly from 0 at one edge to finite resistivity at the other edge. The normalized reflected and transmitted powers are obtained by varying the tapered resistivity and the relative permittivity and thickness of dielectric layers. The sharp variation points are observed when the higher order modes are transferred between propagating and evanescent modes, and in general the local minimum positions occur at less grating period for the more relative permittivity of dielectric layers. It should be noted that the patterns of the normalized reflected and transmitted powers for the tapered resistivity are very much different from those of the uniform resistivity and perfectly conducting cases. The proposed method of this paper cna solve the scattering problems for the tapered resistive, uniform resistive, and PEC strip cases.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Clean Technology
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• v.20 no.4
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• pp.433-438
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• 2014

There is an increasing interest in the development of rechargeable batteries suitable for use in both hybrid electric vehicles and energy storage systems that require higher charge & discharge rates, bigger battery sizes and increased safety of the batteries. Spinel-type lithium titanium oxide ($Li_4Ti_5O_{12}$) as a potential anode for lithium ion batteries has many advantages. It is a zero-strain materials and it experiences no structural change during the charge/discharge precess. Thus, it has long cycle life due to its structural integrity. It also offers a stable operation voltage of approximately 1.55 V versus $Li^+/Li$, above the reduction potential of most organic electrolyte. In this study, Ru added $Li_4Ti_5O_{12}$ composites were synthesized by solid state process. The characteristics of active material were investigated with TGA-DTA, XRD, SEM and charge/discharge test. The capacity was reduced when Ru was added, however, the polarization decreased. The capacity rate of $Li_4Ti_5O_{12}$ with Ru (3%, 4%) addition was reduced during the charge/discharge precess with 10 C-rate as a high current density.

• Journal of IKEEE
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• v.17 no.1
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• pp.71-76
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• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

• Journal of the Korean Electrochemical Society
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• v.7 no.1
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• pp.21-25
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• 2004

The electrochemical behaviors of dissolved hydrogen and hydrogen peroxide at a platinum disk electrode were investigated in boric acid solution by potentiostatic polarization method at the temperature of 25 and $200^{\circ}C$. The oxidation of dissolved hydrogen at $25^{\circ}C$ was kinetically controlled reaction, the rate of which depends upon the electron transfer on the electrode surface. As temperature was raised, however, the electrochemical characteristics of dissolved hydrogen were changed from a kinetically controlled reaction to a diffusion controlled one. One notable feature, with dissolved hydrogen at high temperature, is that an abnormal potential range was observed, where the oxidation rate of dissolved hydrogen rapidly decreased just before starting potential of water oxidation. We think it is caused by the deactivation of the electrode that results from the adsorption of hydroxyl ion on the surface of the platinum disk. On the contrary, a definite change with temperature was not identified in the case of the hydrogen peroxide except for the increase in current density that was due to the increasing diffusion coefcient with an increase of temperature.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.3
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• pp.212-218
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• 2020

When Radiofrequency energy is applied to the human body, the vibration width is very short. Therefore, the electrolyte burn generated when using the direct current does not occur. Ion molecules, polarized molecules, etc., vibrate more than 40,000 times per second, converting them into frictional heat to generate deep heat. The blood flow of capillaries increases 4-5 times more than at rest, increasing the supply of oxygen, nutrients, antibodies, and white blood cells. In addition, the electrochemical reaction does not occur because the vibration width and the pulsation period are very short. It is a physical factor treatment method that does not stimulate the sensory nerves and motor nerves. In this study, an isotonic exercise is performed in a young normal adult using a Radiofrequency pain treatment device. The purpose of this study is to integrate rehabilitation therapy by measuring electromyography data during isotonic exercise and confirming the effect on changes in motor neuron response. The EMG data generated when isotonic exercise of the forearm biceps muscle and the EMG data measured after the use of a Radiofrequency pain treatment device after exercise were RMS, respectively, and verified through t-test. It was confirmed that there was a significant difference in both men and women because the t-value was smaller than the significance level p (<.05).