• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.169-174
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• 2001

The electron transport coefficients(the electron drift velocity, W, and the longitudinal and transverse diffusion coefficient, D$_{L}$ and D$_{T}$) in SiH$_4$-Ar mixtures containing 0.5% and 5.0% monosilane were calculated over the E/N range from 0.01 to 300 Td and over the gas pressure range 0.5, 1.0 and 1.5 Torr by the time-of-flight(TOF) method of the Boltzmann equation(BE.) and Monte-Carlo simulation(MCS). The electron energy distribution function in each SiH$_4$-Ar mixtures at E/N=10 Td and L=0.2 cm, which in equilibrium region in the mean electron enregy were compared.red.

• Electrical & Electronic Materials
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• v.4 no.2
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• pp.143-149
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• 1991

전계가 인가된 H$_{2}$와 CO기체중을 통과하는 전자의 탄성과 비탄성 충돌 단면적을 볼츠만방정식을 이용하여 추정하였는데 충돌 단면적은 운동량변환, 진동여기, 해리, 전자 여기 및 전리 충돌 단면적을 이동속도의 측정값 및 계산값을 비교하므로써 결정하였다. Gibson과 Phelps가 각각 계산한 H$_{2}$ 및 CO의 운동량변환 충돌단면적을 본 연구의 결과와 비교하였으며 이를 기초로하여 온도는 293.deg.K, 상대전계의 세기 E/N은 1*$10^{-17}$ [V$cm^{2}$].leq.E/N.leq.200*10 $^{17}$ [V$cm^{2}$]의 범위에서 전자에너지 분포함수를 산출하였으며 이렇게 산출된 에너지 분포함수 및 충돌단면적은 실험적으로 측정한 모든 수송계수의 값들을 만족하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.181-184
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• 2002

The electron transport coefficients in Air is analysed in range of E/N values from 100~1000(Td) by a MCS and BE method. This paper have calculated W, $ND_L$,$ ND_T$, Mean energy mixtures by $N_2+O_2$. The results gained that the values of the electron swarm parameters such as the electron drift velocity, longitudinal and transverse diffusion coefficients.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.359-364
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• 2000

The paper describes the electron transport characteristics in SP$_{6}$+He gas calculated E/N values 0.1~700[Td] by the Monte Carlos simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters obtained by TOF method. This study gained the values of the electron swarm parameters such as the electron drift velocity the electron ionization or attachment coefficients longitudinal and transverse diffusion coefficients for SF$_{6}$+He gas at a range of E/N.E/N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.174-177
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Xe were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Xe molecular gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.182-185
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Ne were calculated over the wide E/N range from 0.01 to 300 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Ne molecular gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.164-167
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure $CO_2$ were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of $CO_2$ molecular gas. And for propriety of two-term approximation of Boltzmann equation analysis, the calculated results compared with the electron transport coefficients measured by Nakamura.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.29-32
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• 2001

We measured the electron transport coefficients(the electron drift velocity, W, and the longitudinal diffusion coefficient, $D_L$) in pure $CF_4$ over the E/N range from 0.04 Td to 250 Td by the double shutter drift tube. And these electron transport coefficients in pure $CF_4$ were calculated over the E/N range from 0.01 to 250 Td at 1 Torr by using the two-term approximation of the Boltzmann equation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.696-699
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• 1999

The electron transport coefficients in $SF_6+N_2$ gas is analysed in range of E/N values from 100~900(Td) by a Monte Carlo simulation and Boltzmann method, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2182-2187
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• 2007

The relative contributions of phonon and electron to the thermal conductivity of silicon film with varying doping density are evaluated from the modified electron-phonon interaction model, which is applicable to the micro/nanoscale simulation of energy transport between energy carriers. The thermal conductivities of intrinsic silicon layer thicknesses from 20 nm to 500 nm are calculated and extended to the variation in n-type doping densities from 1.0 ${\times}$ $10^{18}$ to 5.0 ${\times}$ $10^{20}$ $cm^{-3}$, which agree well with the experimental data and theoretical model. From simulation results, the phonon and electron contributions to thermal conductivity are extracted. The electron contribution in the silicon is found to be not negligible above $10^{19}$ $cm^{-3}$, which can be classified as semimetal or metal by the value of its electrical resistivity at room temperature. The thermal conductivity due to electron is about 57.2% of the total thermal conductivity at doping concentration 5.0 ${\times}$ $10^{20}$ $cm^{-3}$ and silicon film thickness 100 nm.