• Title/Summary/Keyword: 변조지수

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Analytical Modeling for Short-Channel MOSFET I-V Characteristice Using a Linearly-Graded Depletion Edge Approximation (공핍층 폭의 선형 변화를 가정한 단채널 MOSFET I-V 특성의 해석적 모형화)

  • 심재훈;임행삼;박봉임;여정하
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.4
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    • pp.77-85
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    • 1999
  • By assuming a linearly graded depletion edge approximation in the intrinsic MOS region and by taking into account the mobility variation dependent on both lateral and vertical fields, a physics-based analytical model for a short-channel(n-channel) MOSFET is suggested. Derived expressions for the threshold voltage and the drain current of typical MOSFET is structures could be used in a unified manner for all operating range. The threshold voltage was calculated by changing following variables : channel length, drain-source voltage, source-substrate voltage, p-substrate doping level, and oxide thickness. It is shown that the threshold voltage decreases almost exponentially as the channel length decreases. In addition, the short-channel threshold voltage roll-off, the channel length modulation and the electron mobility degradation can be derived within a satisfactory accuracy.

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Simple Lower Bound for MPSK Symbol Error Probability (M진 위상 천이 변조 심볼 오류 확률의 간단한 하한식)

  • 윤동원
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.3
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    • pp.352-357
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    • 2000
  • The symbol error probability for the coherent detection of MPSK signals in additive white Gaussian noise(AWGN) can be evaluated exactly for M=2 and M=4. The MPSK symbol error probability bounds obtained in the past are simple to calculate, but not accurate. More recently, very tight bounds have been proposed, but they are complex to calculate. In this paper to obtain a simple and accurate lower bound for coherent MPSK symbol error probability in AWGN, we consider the symbol error probability for MPSK in Nakagami fading case first. Then as the Nakagami fading index m approaches to infinity, we obtain the symbol error probability for the MPSK in AWGN.

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A Study on the performance evaluation with TCM and MTCM in the mobile radio environment (이동 무선 환경에서의 TCM 및 MTCM의 성능 비교 평가)

  • 김민호
    • Journal of the Korea Society of Computer and Information
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    • v.5 no.4
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    • pp.90-95
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    • 2000
  • In order to enhance the confidence in the mobile communication and improve the performance of the bit error, we have been using coding method. In the case of this, we have to add redundancy bits by using error correcting codes such as the block or convolutional codes. However, the result of redundancy bits causes to improve confidence. but to drop the efficiency in the bandwidth. We have studied coding method that we are able to get the good coding gain without any changes in the data transmission rates in the limited bandwidth. In this Paper, we design TCM(Trellis Coded Modulation) which was proposed by Ungerboeck and MTCM(Multiple TCM), with multiplicity(k=2), which was proposed by Divsalar, using the optimum encoder. As state number is varied in the optimum encoder, we compare the performance of the TCM and MTCM by using Monte Carlo simulation.

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Maximum Modulation Index of VSC HVDC based on MMC Considering Compensation Signals and AC Network Conditions (전력계통 전압 변동과 순환 전류 보상 성분을 고려한 MMC 기반 VSC-HVDC의 최대 변조 지수 선정에 관한 연구)

  • Kim, Chan-Ki;Belayneh, Negesse Belete;Park, Chang-Hwan;Kim, Jang-Mok
    • The Transactions of the Korean Institute of Power Electronics
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    • v.25 no.1
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    • pp.61-67
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    • 2020
  • This study deals with the modulation index (MI) of a voltage source converter (VSC) HVDC system based on a modular multilevel converter (MMC). In the two-level converter, the purpose of the MI is to maximize the achievable AC voltage of the converter from a fixed DC voltage. Unlike that in a two-level converter, the MI in the MMC topology plays a role in making the converter a voltage source using a capacitor. The circulating current in the MMC distorts the AC voltage reference, and the distortion affects the MI. In addition, the AC network conditions, such as AC voltage variation and reactive power, affect the MI. Therefore, the MI should be optimized with consideration of internal and external factors. This study proposes a method to optimize the MI of an MMC HVDC system.

Implementation and Evaluation of Electroglottograph System (전기성문전도(EGG) 시스템의 개발 및 평가)

  • 김기련;김광년;왕수건;허승덕;이승훈;전계록;최병철;정동근
    • Journal of Biomedical Engineering Research
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    • v.25 no.5
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    • pp.343-349
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    • 2004
  • Electroglottograph(EGG) is a signal recorded from the vocal cord vibration by measuring electrical impedance across the vocal folds through the neck skin. The purpose of this study was to develop EGG system and to evaluate possibility for the application on speech analysis and laryngeal disease diagnosis. EGG system was composed of two pairs of ring electrodes, tuned amplifier, phase sensitive detector, low pass filter, and auto-gain controller. It was designed to extract electric impedance after detecting by amplitude modulation method with 2.7MHz carrier signal. Extracted signals were transmitted through line-in of PC sound card, sampled and quantized. Closed Quotient(CQ), Speed Quotient(SQ), Speed Index(SI), fundamental frequency of vocal cord vibration(F0), pitch variability of vocal fold vibration (Jitter), and peak-to-peak amplitude variability of vocal fold vibration(Shimmer) were analyzed as EGG parameters. Experimental results were as follows: the faster vocal fold vibration, the higher values in CQ parameter and the lower values in SQ and SI parameters. EGG and speech signals had the same fundamental frequency. CQ, SQ, and SI were significantly different between normal subjects and patients with laryngeal cancer. These results suggest that it is possible to implement portable EGG system to monitor the function of vocal cord and to test functional changes of the glottis.

Pyroelectric Properties of the $\beta$-PVDF (Poly(vilnylidene fluoride)) Thin Film Prepared by Vacuum Deposition with Applying Electric Field (전계인가 진공 증착법으로 제작된$\beta$ -PVDF (Poly(vinylidene fluoride)) 박막의 초전 특성)

  • Chang, Dong-Hoon;Kang, Seong-Jun;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.5
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    • pp.23-30
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    • 2002
  • The PVDF (Polyvinylidene Fluoride) thin film having P phase is prepared by the vacuum deposition with applying the electric field and its pyroelectric properties are studied by using a dynamic method to examine the possibility of the application to the pyroelectric IR sensor. The pyroelectric responses of the PVDF thin film are characterized as the frequency dispersion in both low and high modulation frequency regions, and their frequency dependences are observed. In the low frequency region (2~10Hzz), the polarization can easily rotate with the increase of modulation frequency and show the maximum since the reorientation rate of domains is higher than the modulation frequency. On the other hand, in the high frequency region (100~1000Hz), the pyroelectric response decreases as the frequency increases, because the reorienatation rate of domains is suppressed and thus, the change of polarization decreases. Pyroelectric coefficient, figure of merits for noise equivalent power and detectivity of the PVDF thin film are measured as 3.2$\times$10$^{-10}$ C/$\textrm{cm}^2$.K, 2.34$\times$10$^{-10}$ C.cm/J and 1.32$\times$10$^{-9}$ C.cm/J, respectively. Also, the noise equivalent and the detectivity are 1.66$\times$10$^{-7}$ W/H $z^{$\sfrac{1}{2}$}$, 6.03$\times$10$^{5}$ cm.H $z^{$\sfrac{1}{2}$}$W, respectively.

A Study on Implementation and Performance Evaluation of Error Amplifier for the Feedforward Linear Power Amplifier (Feedforward 선형 전력증폭기를 위한 에러증폭기의 구현 및 성능평가에 관한 연구)

  • Jeon, Joong-Sung;Cho, Hee-Jea;Kim, Seon-Keun;Kim, Ki-Moon
    • Journal of Navigation and Port Research
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    • v.27 no.2
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    • pp.209-215
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    • 2003
  • In this paper. We tested and fabricated the error amplifier for the 15 Watt linear power amplifier for the IMT-2000 baseband station. The error amplifier was comprised of subtractor for detecting intermodulation distortion, variable attenuator for control amplitude, variable phase shifter for control phase, low power amplifier and high power amplifier. This component was designed on the RO4350 substrate and integrated the aluminum case with active biasing circuit. For suppression of spurious, the through capacitance was used. The characteristics of error amplifier measured up to 45 dB gain, $\pm$0.66 dB gain flatness and -15 dB input return loss. Results of application to the 15 Watt feedforward Linear Power Amplifier, the error amplifier improved with 27 dB cancellation from 34 dBc to 61 dBc IM$_3$.

Nonlinearity Compensation of Electroabsorption Modulator by using Semiconductor Optical Amplifier (반도체 광증폭기를 이용한 전계흡수 광변조기 비선형성 보상)

  • Lee, Chang-Hyeon;Son, Seong-Il;Han, Sang-Guk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.5
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    • pp.23-30
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    • 2000
  • To compensate the nonlinearity of electroabsorption modulator(EAM) resulting from its near exponential transfer function, a semiconductor optical amplifier(SOA) that has a log transfer function is used. Since the transfer function of SOA is inverse to that of EAM, the intermodulation distortion(IMD) of EAM can be reduced by cascading SOA to EAM. Also, the RF gain can be increased by the optical gain of SOA. For these reasons, spurious free dynamic range(SFDR) of EAM is enhanced by connecting SOA to EAM in series and operating in gain salutation region. To improve the nonlinearity compensation of EAM, the increased gain of SOA is required and the slope of gain saturation, the ratio of gain to input SOA power, needs to be steep. However, signal spontaneous beat noise that is the dominant system noise increases in proportion to the gain such that the SFDR of EAM is reduced. The higher the gain of SOA is, the more ASE is increased. Thus the noise level of system is increased and the following SFDR of EAM is decreased. The slope of gain saturation region and ASE of have trade-off relation and the optimization is achieved at 8㏈ optical gain. 9㏈ enhancement of SFDR of EAM is obtained. This scheme is easy to embody the linear EAM and the integration with three components (DFB-LD, EAM and SOA) offers many merits, such as low insertion loss, low chirping and low polarization sensitivity.

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A Study on the PAPR Reduction Using Phase Rotation Method Applying Metaheuristic Algorithm (Metaheuristic 알고리즘을 적용한 위상회전 기법에 의한 PAPR 감소에 관한 연구)

  • Yoo, Sun-Yong;Park, Bee-Ho;Kim, Wan-Tae;Cho, Sung-Joon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.5
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    • pp.26-35
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    • 2009
  • OFDM (Orthogonal Frequency Division Multiplexing) system is robust to frequency selective fading and narrowband interference in high-speed data communications. However, an OFDM signal consists of a number of independently modulated subcarriers and the superposition of these subcarriers causes a problem that can give a large PAPR(Peak-to-Average Power Ratio). Phase rotation method can reduce the PAPR without nonlinear distortion by multiplying phase weighting factors. But computational complexity of searching phase weighting factors is increased exponentially with the number of subblocks and considered phase factor. Therefore, a new method, which can reduce computational complexity and detect phase weighting factors efficiently, should be developed. In this paper, a modeling process is introduced, which apply metaheuristic algerian in phase rotation method and optimize in PTS (Particle Swarm Optimization) scheme. Proposed algorithm can solve the computational complexity and guarantee to reduce PAPR We analyzed the efficiency of the PAPR reduction through a simulation when we applied the proposed method to telecommunication systems.

A Study on the Design of Ku-band Mixer Using a HEMT (HEMT를 이용한 Ku-band 혼합기의 설계에 관한 연구)

  • 성혁제;구자건
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.7
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    • pp.944-950
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    • 1993
  • Diodes and GaAs have been commonly used in a mixer design until recently. However, diodes are not preferred to use at the front-end of DBS receiver due to the conversion loss large noise. HEMT has larger conversion gain and better noise characteristics comparing with GaAs MESFET. This paper describes the design procedure, structure, and performance of a mixer, utilizaing HEMT designed by OKI Co. . A mixer configuration in which the local oscillator(LO) signal is applied to the gate is used. When the LO power is 0.01 dBm, the conversion gain of 3.7dB is obtained at IF and the 3 dB bandwidth is 400MMz.

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