• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.163-167
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• 2016

We have developed a millimeter-wave radiometer system for applications in the fields of medical imaging. In this paper, we introduced the brightness temperature measurement in the human body using Millimeter-wave Radiometer. Calibration of sensitivity of the radiometer system is essential to measure equivalent temperature (brightness temperature) of objects. We have developed, as a calibration source, a new type of black body for the millimeter wave region with temperature control capability. The system noise figure and temperature sensitivity of the system measured using the blackbody are 3.3 dB and 0.1 K, respectively. The brightness temperature of human body through clothes was measured to be around $38^{\circ}$[C].

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.1-6
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• 2010

A comparative analysis of quantum-mechanical and classical simulation regarding corner effect in a Saddle MOSFET has been carried out using a 3-D numerical simulator. The comparison has shown that quantum simulation gives correct description of device by providing accurate peak E-density position and magnitude at the Si-fin cross-section, hence accurate analysis of corner effect and its impact on device threshold voltage (Vth) characteristics is carried out. Moreover, rounding the Si-fin comers or lowering the body doping have been shown as two possible techniques to suppress the undesirable corner effect.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.3
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• pp.1229-1235
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• 2014

At the LPG vehicle air intake system, most of dust particles in the air cleaner are removed. However very small particles are not removed and accumulated. The accumulation of carbon in air intake system is going to affect the idle speed control and sensor signal. It also causes engine chattering and transmission troubles of automatic transmission. This is study about cleaning up intake system using cleaning chemical. We can clean up the intake system by spraying cleaning liquid onto intake device when the engine is idling after intake hose is removed from warmed up vehicle. We can obtain the following experimental results by cleaning up ISC, surge tank, intake manifold, intake valves and combustion chamber. According to this results, the stroll valve works correctly and power rate of engine is up to the standard, it is smoothy to control the idling speed when a vehicle pulls up. After cleaning up CO grow down about 0.15%, HC does about 20~100 ppm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.7
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• pp.993-1000
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• 2018

This paper proposes a low-dropout voltage regulator(LDO) using self-cascode structure. The self-cascode structure was optimized by adjusting the channel length of the source-side MOSFET and applying a forward voltage to the body of the drain-side MOSFET. The self-cascode of the input differential stage of the error amplifier is optimized to give higher transconductance, but the self-cascode of the output stage is optimized to give higher output resistance, The proposed LDO using self-cascode structure was designed by a $0.18{\mu}m$ CMOS technology and simulated using SPECTRE. The load regulation of the proposed LDO regulator was 0.03V/A, whereas that of the conventional LDO was 0.29V/A. The line regulation of the proposed LDO regulator was 2.23mV/V, which is approximately three times improvement compared to that of the conventional LDO. The transient response of the proposed LDO regulator was 625ns, which is 346ns faster than that of the conventional LDO.

• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.