• Title/Summary/Keyword: 미소기계

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Nano-bending method for the measurement of the Poisson's ratio of MEMS thin films (MEMS 박막의 푸와송 비 측정을 위한 미소굽힘기법)

  • 김종훈;김정길;연순창;전윤광;한준희;이호영;김용협
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.31 no.2
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    • pp.57-62
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    • 2003
  • Nano-bending method is presented to measure the Poisson's ratio of thinfilms for MEMS (Micro-Electro-Mechanical Systems) applicaiton. The douvle-ring specimen is designed and fabricated based on the surface micromachining process to facilitate the measurement of the Poisson's ratio. The Poisson's ratio can be obtained through analyzing the linear load-displacement relationship of the double ring specimen subjected to nano-indenter loading. The Present nano-bending mehod is an in-situ measurement approach due to the compatibility to the surface micromachining process. The Poisson's ratio is locally obtained at the location of the double ring specimen with micro dimension. To validate the nano-bending method, the Poisson's ratio of LPCVD (Low Pressure Chemical Vapor Deposition) poly-silicon with thickness of 2.3㎛ is investigated. Experimental results reveal that the Poisson's ratio of the poly-silicon film is 0.2569. The standard deviation of the nano-bending measurement for the stiffness of double ring specimens is 2.66%.

Fast Simulation of Output Voltage for High-Shock Piezoresistive Microaccelerometer Using Mode Superposition Method and Least Square Method (모드중첩법 및 최소자승법을 통한 고충격 압저항 미소가속도계의 출력전압 해석)

  • Han, Jeong-Sam;Kwon, Ki-Beom
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.36 no.7
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    • pp.777-787
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    • 2012
  • The transient analysis for the output voltage of a piezoresistive microaccelerometer takes a relatively high computation time because at least two iterations are required to calculate the piezoresistive-structural coupled response at each time step. In this study, the high computational cost for calculating the transient output voltage is considerably reduced by an approach integrating the mode superposition method and the least square method. In the approach, data on static displacement and output voltage calculated by piezoresistive-structural coupled simulation for three acceleration inputs are used to develop a quadratic regression model, relating the output voltage to the displacement at a certain observation point. The transient output voltage is then approximated by a regression model using the displacement response cheaply calculated by the mode superposition method. A high-impact microaccelerometer subject to several types of acceleration inputs such as 100,000 G shock, sine, step, and square pulses are adopted as a numerical example to represent the efficiency and accuracy of the suggested approach.

Hybrid UV Lithography for 3D High-Aspect-Ratio Microstructures (하이브리드 자외선 노광법을 이용한 3차원 고종횡비 미소구조물 제작)

  • Park, Sungmin;Nam, Gyungmok;Kim, Jonghun;Yoon, Sang-Hee
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.40 no.8
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    • pp.731-736
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    • 2016
  • Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed.

A New Simple Technique for View Factor Computation (간단한 복사 형상계수 계산 방법)

  • Cho, S. H.
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.7 no.1
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    • pp.96-102
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    • 1983
  • 복사 형상계수를 계산하는 새롭고도 간단한 수치적 방법이 개발되었다. 유한선분 적분법은 윤 곽적분을 이용하며, 윤곽은 유한한 수의 선분으로 구성된 것으로 가정한다. 미소면적으로부터 유한면적까지의 복사 형상계수는 적분로 상의 절점의 좌표값에만 관계되며, 전자 계산기에 쉽게 프로그램 될 수 있다. 가우스의 적분을 이용하여 두 유한 면적사이의 복사 형상계수를 구한다. 미소 면적에서 원판까지, 두 개의 평행원판 사이, 및 두 개의 직사각형 사이의 복사 형상계수를 구하여 엄밀해와 비교하여 유한선분 적분법의 정확성이 우수함을 보였다. 단위구와 단위 정사 각형에서 타원체까지의 보가 형상계수의 값도 구하였다.

Friction in Micro-Channel Flows of a Liquid and Vapor in Trapezoidal Grooves (미소 사다리꼴 그루브를 갖는 채널내의 유동에서 기-액의 상호마찰의 영향)

  • Suh, Jeong-Se;Grief, Ralph
    • Proceedings of the KSME Conference
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    • 2000.11b
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    • pp.124-129
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    • 2000
  • The flow of liquid and vapor is investigated in trapezoidal grooves. The effect of variable shear stress along the interface of the liquid and vapor is studied for both co-current and counter-current flows. Velocity contours and results fur the friction are obtained for both trapezoidal grooves. An approximate relation that was previously utilized for the friction for the liquid was modified to obtain accurate agreement with the results for trapezoidal grooves.

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Critical Aspect of Non-Propagation of Short Fatigue Crack in Structural Steel (구조용 강재에 발생하는 미소피로 크랙의 정유요인)

  • 김민건
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.15 no.3
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    • pp.880-886
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    • 1991
  • 본 연구에서는 이미 크랙전파의 제단계에 있는 평골재의 정유 크랙을 대상으 로, COD를 고정밀도로 측정하는 것을 주된 수단으로하여, 피로한도의 존재유무를 지배 하는 미소크랙의 정유구조를 상세히 밝히고자 한다. 또한 변형시교에 근거한 현상으 로만 알려져온 과소응력효과, coaxing효과를 크랙폐구현상의 관점에서 검토하여, 크랙 정유현상의 본질적인 이해를 얻고자 한다.

Estimation of mechanical damage by minority carrier recombination lifetime and near surface micro defect in silicon wafer (실리콘 웨이퍼에서 소수 반송자 재결합 수명과 표면 부위 미세 결함에 의한 기계적 손상 평가)

  • 최치영;조상희
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.157-161
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    • 1999
  • We investigated the effect of mechanical back side damage in Czochralski silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductance decay ($\mu$-PCD) technique, wet oxidation/preferential etching methods, near surface micro defect (NSMD) analysis, and X-ray section topography. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and NSMD density increased proportionally, also correlated to the oxidation induced stacking fault (OISF) density. Thus, NSMD technique can be used separately from conventional etching method in OISF measurement.

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전자 패키지 신뢰성 평가기술의 현황과 전망

  • 이순복
    • Journal of the KSME
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    • v.43 no.6
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    • pp.47-51
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    • 2003
  • 이 글에서는 전자 패키지 열적.기계적 신뢰성 평가 기술의 현황과, 전자 패키지의 신뢰성 설계를 위한 피로 실험, 미소 변형측정, 유한요소 해석을 통한 파손 해석 등의 관련 기술들을 소개한다.

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