• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.907-909
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• 2009

In this paper, the dependence of threshold voltage on the gate oxide thickness, which it mostly influenced on short channel effects in fabrication of FinFET, has been investigated. The transport model based on three dimensional Possion's equation has been used to analyze influence on gate oxide thickness. The gate oxide thickness is the most important factor to influence on the threshold voltage in nano structure FinFET. The potential distributions of this model are compared with those of three dimensional numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with hree dimensional numerical model, the threshold voltage characteristics have been considered according to the gate oxide thickness of FinFET.

• Proceedings of the Acoustical Society of Korea Conference
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• 1994.06c
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• pp.129-132
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• 1994

본 논문에서는 윈도우즈용 음성인식 software "voice access"를 개발하여 연구한 실시간 음성검출 알고리즘에 관해 소개한다. 이 음성검출 알고리즘은 200 sample 단위의 프레임 에너지, 프레임 영교차율, 음성의 길이를 음성검출의 파라메타로 사용한다. 각 파라메타의 문턱값은 신호의 평균값, 잡음의 표준편차, 미디안 표준편차와 한국어의 음성적 특성을 고려하여 설정하였으며 주변의 환경에 적응해 가며 문턱값을 조정하므로 주변 잡음환경의 변화에 대해서도 강인한 음성검출 결과를 보여준다. 또한 실시간으로 음성을 검출하므로 실용성이 높다. 음성의 검출은 일반사운드 카드를 통해 16-bit의 8KHz로 샘플링된 신호를 사용한다. 음성검출을 위한 분석은 200 sample 씩 하고 100 sample 씩 overlap 하면서 수행한다. 음성검출을 위한 모든 분석은 특별한 DSP의 도움없이 486D 이상에서 실시간으로 구현했다.시간으로 구현했다.

• Journal of the Institute of Convergence Signal Processing
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• v.1 no.2
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• pp.97-104
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• 2000

Effective call admission control is desirable to control an ATM traffics. It should provide high fairness and utilization for different kinds of services during call admission. Complete bandwidth sharing method is efficient for utilization of bandwidth but not efficient for fairness of call admission. Complete bandwidth partitioning method is efficient for fairness but not efficient for utilization. We propose a new CST(Complete Sharing with Threshold) algorithm using threshold on a total link to improve fairness and utilization.

• Journal of the Korean Institute of Intelligent Systems
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• v.16 no.5
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• pp.627-634
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• 2006

We have proposed the methods how to control the slope of CMOS inverter's characteristic and how to shift it in y axis. We control the MOS transistor threshold voltage for these methods. By observing that two transistors are in saturation region at the center of the CMOS inverter's characteristic, we have presented how to make the characteristic for one pole neuron. The circuit level simulation is used for verifying the proposed method. PSpice(OrCAD Co.) is used for circuit level simulation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.7
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• pp.1537-1542
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• 2011

In this paper, the subthreshold characteristics have been analyzed for various oxide thickness of double gate MOSFET(DGMOSFET) using Poisson's equation with nonuniform doping distribution. The DGMOSFET is extensively been studying since it can shrink the short channel effects(SCEs) in nano device. The degradation of subthreshold swing(SS) known as SCEs has been presented using analytical for, of Poisson's equation with nonuniform doping distribution for DGMOSFET. The SS have been analyzed for, change of gate oxide thickness to be the most important structural parameters of DGMOSFET. To verify this potential and transport models of thus analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing has been analyzed using this models for DGMOSFET.

• Journal of IKEEE
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• v.24 no.1
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• pp.194-199
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• 2020

The threshold voltage roll-off for an asymmetric junctionless double gate MOSFET is analyzed according to the top and bottom gate oxide thicknesses. In the asymmetric structure, the top and bottom gate oxide thicknesses can be made differently, so that the top and bottom oxide thicknesses can be adjusted to reduce the leakage current that may occur in the top gate while keeping the threshold voltage roll-off constant. An analytical threshold voltage model is presented, and this model is in good agreement with the 2D simulation value. As a result, if the thickness of the bottom gate oxide film is decreased while maintaining a constant threshold voltage roll-off, the top gate oxide film thickness can be increased, and the leakage current that may occur in the top gate can be reduced. Especially, it is observed that the increase of the bottom gate oxide thickness does not affect the threshold voltage roll-off.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.928-930
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• 2009

In this paper, the threshold voltage characteristics have been alanyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for FinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.30-31
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• 2002