• Journal of KIISE:Computer Systems and Theory
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• v.35 no.6
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• pp.284-292
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• 2008

The density of Memory has been increased by great challenge for memory technology; therefore, elements of memory become more smaller than before and the sensitivity to faults increases. As a result of these changes, memory testing becomes more complex. In addition, as the number of storage elements per chip increases, the test cost becomes more remarkable as the cost per transistor drops. Recent development in system-on-chip(SoC) technology makes it possible to incorporate large embedded memories into a chip. However, it also complicates the test process, since usually the embedded memories cannot be controlled from the external environment. We present a ARM processor-programmable built-in self-test(BIST) scheme suitable for embedded memory testing in the SoC environment. The proposed BIST circuit can be programmed vis an on-chip microprocessor.

• Journal of KIISE:Computer Systems and Theory
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• v.28 no.6
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• pp.310-316
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• 2001

본 논문에서는 10N March 테스트 알고리즘에 기반한 내장된 이중 포트 메모리를 위한 효율적인 테스트 알고리즘을 제안하였다. 제안된 알고리즘은 각각의 포트에 대해 독립적으로 테스트 알고리즘을 적용함으로써 각각의 포트에 대해서 단일 포트 메모리 테스트 알고리즘을 적용하는 방법에 비해 시간 복잡도를 20N에서 8.5N으로 시간 복잡도를 줄였다. 그리고 제안된 알고리즘은 주소 디코더 고장, 고착 고장, 천이 고장, 반전 결합 고장, 동행 결합 고장을 모두 검출할 수 있다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.115-131
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• 2004

As dual port memories are being frequently used, test and diagnosis for dual port memories becomes more important. In this paper, anew diagnosis algerian which can classify faults in detail when the fault is detected during test process is developed. The new algerian increases its efficiency by using the information that can be obtained by test results as well as results using additional diagnostic pattern set. In addition the algorithm can diagnose various fault models for dual port memories.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.3 no.3
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• pp.3-7
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• 2010

As the distance between signal lines in memories of high density ICs like SoCs decreases rapidly, failure occurs more frequently and effective memory test techniques are needed. In this paper, a new SRAM structure is proposed to decrease test complexity and test time for embedded DRAMs. In the presented technique, because memory test can be handled as a single port testing and read-write operation is possible at dual port without high complexity, test time can be much reduced.

• The KIPS Transactions:PartA
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• v.14A no.3 s.107
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• pp.185-190
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• 2007

The necessity of error test module is increasing as development of embedded Linux device driver. This paper proposes the basic concept of freed memory error test module in the Linux device driver and designs error test module. The USB device driver is designed for freed memory error test module. I insert the test code to verify the USB device driver. I test the suggested error test module for the USB storage device driver. I experiment error test in this module.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.11
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• pp.44-52
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• 2002

Since memory technology has been developed fast, test complexity and test time have been increased simultaneously. In practice, March algorithms are used widely for detecting various faults. However, March algorithms cannot detect NPSFs(Neighborhood Pattern Sensitive Faults) which must be considered for DRAMs. This paper proposes an effective algorithm for high fault coverage by modifying the conventional March algorithms.

• Journal of KIISE:Computer Systems and Theory
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• v.34 no.12
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• pp.618-629
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• 2007

In this paper, we propose an effective memory test environment, called a virtualized kernel, for 64bit multi-core computing environments. The term of effectiveness means that we can test all of the physical memory space, even the memory space occupied by the kernel itself, without rebooting. To obtain this capability, our virtualized kernel provides four mechanisms. The first is direct accessing to physical memory both in kernel and user mode, which allows applying various test patterns to any place of physical memory. The second is making kernel virtualized so that we can run two or more kernel image at the different location of physical memory. The third is isolating memory space used by different instances of virtualized kernel. The final is kernel hibernation, which enables the context switch between kernels. We have implemented the proposed virtualized kernel by modifying the latest Linux kernel 2.6.18 running on Intel Xeon system that has two 64bit dual-core CPUs with hyper-threading technology and 2GB main memory. Experimental results have shown that the two instances of virtualized kernel run at the different location of physical memory and the kernel hibernation works well as we have designed. As the results, the every place of physical memory can be tested without rebooting.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.122-130
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• 2013

The demand and the supply are increasing sharply in accordance with the growth of the Memory Semiconductor Industry. The Flash Memory above all is being utilized substantially in the Industry of smart phone, the tablet PC and the System on Chip (SoC). The Flash Memory is divided into the NOR-type Flash Memory and the NAND-type Flash Memory. A lot of study such as the Built-In Self Test (BIST), the Built-In Self Repair (BISR) and the Built-In Redundancy Analysis (BIRA), etc. has been progressed in the NOR-type fash Memory, the study for the Built-In Self Test of the NAND-type Flash Memory has not been progressed. At present, the pattern test of the NAND-type Flash Memory is being carried out using the outside test equipment of high price. The NAND-type Flash Memory is being depended on the outside equipment as there is no Built-In Self Test since the erasure of block unit, the reading and writing of page unit are possible in the NAND-type Flash Memory. The Built-In Self Test equipped with 2 kinds of finite state machine based structure is proposed, so as to carry out the pattern test without the outside pattern test equipment from the NAND-type Flash Memory which carried out the test dependant on the outside pattern test equipment of high price.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.33-40
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• 2008

As the speed of memory is improved vey fast the advanced test equipments are needed to test the ultra-high speed memory devices efficiently. It is necessary to develop the Algorithmic Pattern Generator (ALPG) that tests fast memory devices effectively using the instructions that testers want to use. In this paper, we propose a new parallel ALPG for the ultra-high speed memory testing. The proposed ALPG can generate patterns for fast memory devices at high speed using manual instructions by the Instruction Analyzer.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.12
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• pp.47-58
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• 1999

As the performance of processors improves, cache memories are used to overcome the difference of speed between processors and main memories. Generally cache memories are embedded and small sizes, fault coverage is a more important factor than test time in testing point of view. A new test algorithm and a new BIST architecture are developed to detect various fault models with a relatively small overhead. The new concurrent BIST architecture uses the comparator of cache management blocks as response analyzers for tag memories. A modified scan-chain is used for pre-testing of comparators which can reduce test clock cycles. In addition several boundary scan instructions are provided to control the internal test circuitries. The results show that the new algorithm can detect SAFs, AFs, TFs linked with CFs, CFins, CFids, SCFs, CFdyns and DRFs models with O(12N), where N is the memory size and the new BIST architecture has lower overhead than traditional architecture by about 11%.