• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2015.05a
• /
• pp.839-841
• /
• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널길이와 채널두께의 비에 따른 드레인 유도 장벽 감소 현상의 변화에 대하여 분석하고자한다. 드레인 전압이 소스 측 전위장벽에 영향을 미칠 정도로 단채널을 갖는 MOSFET에서 발생하는 중요한 이차효과인 드레인 유도 장벽 감소는 문턱전압의 이동 등 트랜지스터 특성에 심각한 영향을 미친다. 드레인 유도 장벽 감소현상을 분석하기 위하여 포아송방정식으로부터 급수형태의 전위분포를 유도하였으며 차단전류가 $10^{-7}A/m$일 경우 비대칭 이중게이트 MOSFET의 상단게이트 전압을 문턱전압으로 정의하였다. 비대칭 이중게이트 MOSFET는 단채널효과를 감소시키면서 채널길이 및 채널두께를 초소형화할 수 있는 장점이 있으므로 본 연구에서는 채널길이와 두께 비에 따라 드레인 유도 장벽 감소를 관찰하였다. 결과적으로 드레인 유도 장벽 감소 현상은 단채널에서 크게 나타났으며 하단게이트 전압, 상하단 게이트 산화막 두께 그리고 채널도핑 농도 등에 따라 큰 영향을 받고 있다는 것을 알 수 있었다.

• Journal of the Korean Ceramic Society
• /
• v.40 no.5
• /
• pp.455-459
• /
• 2003

Tunneling spectra of B $i_2$S $r_2$Ca(C $u_{1-x}$ N $i_{x}$ )$_2$ $O_{8+}$$\delta$/ film by LPE method have been measured using break junctions. The energy gap 2$\Delta$ and 2$\Delta$/ $k_{B}$ $T_{c}$ $^{zero}$ increased with increase of ft. We obtained the energy gap Parameter 2$\Delta$(4.2 K) = 54.4~64 meV, and corresponding1y $\Delta$/ $k_{B}$ $T_{c}$ $^{zero}$=7.36~10.14, larger than the BCS value. The lattice constant c and critical temperature $T_{c}$ $^{zero}$ decrease with increase of $\chi$$_{L}$.

• Proceedings of the Korean Society of Developmental Biology Conference
• /
• 2001.08a
• /
• pp.36-37
• /
• 2001

큰가리비는 자웅이체이다. 난환형성과정은 난모세포의 발달정도에 다라 다르게 나타나고 있다. 난자형성과정은 난원세포기, 전난황형성난모세포기, 초기난황형성난모세포기, 후기난황형성난모세포기, 성숙난모세포기의 연속적인 5단계의 과정으로 나눌 수 있었다. 전난황형성기 난모세포질 내에서는 핵주변 구역에 골지장치와 수많은 공포들 및 미토콘드리아들이 출현하고 있는데 이들은 차후, 지방적 형성에 관여한다. 난황형성전기난모세포(previtellogenic oocyte)에서는 지방적 및 지질과립들이 핵막 근처에서 출현하여 피질층쪽으로 분산되는 반면, 같은 발달 단계의 난모세포질의 피질구역에서는 피질과립들(단백질성 난황과립)이 처음으로 생성되어 난황막 근처의 피질층에서 핵주변 구역쪽으로 분산.분포된다. 난황형성후기 난모세포에서는 세포질 내의 골지장치, 공포, 미토콘드리아, 그리고 조면소포체들이 자율합성에 의해 난황과립 형성에 관여하고 있다. 반면 외인성 물질들인 지질형태의 과립들, 다량의 글리코겐 입자들이 생식상피 내에서 출현하고 있는데. 이들 물질이 생식상피에서 난황막 구조물인 미세융모를 통해 난황형성 후기 난모세포의 날질 내로 통과해 들어가는 현상이 관찰되었다. 이와같은 현상은 난황형성이 일어날 때에 heterosynthesis가 일어나고 있음을 시사한다. 완숙난모세포의 난경은 약 50~60$\mu\textrm{m}$이다. 정자형성과정은 정원세포기, 제1차정모세포기, 제2차정모세포기, 정세포기, 정자기의 연속적인 5단계로 나눌수 있었다. 정셍포기에서 정자로 변태되는 과정 중에 침체의 분화과정이 있는데 이에는 1. Golgi phase, 2. Cap phase 3. acrosome phase, 4. maturation phase의 단계를 거쳐 첨체가 완성된다. 정자는 원시적 형태를 이루고 있으며 4개의 미토콘드리아가 부핵을 형성하고 있다. 완숙정자 두부의 길이는 대략 $3 \mu$m 이며, 미부의 길이는 약 $30 \mu$m정도이다. 정자 미부편모의 axoneme은 중앙의 2개의 미세소관(microtubule)과 주변에 위치한 9개의 2중 미세소구관(microtublue)으로 이루어져 있다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.7
• /
• pp.1617-1622
• /
• 2015

This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.

• Korean Chemical Engineering Research
• /
• v.51 no.6
• /
• pp.766-773
• /
• 2013

A transparent film was fabricated based on bacterial cellulose (BC), BC has excellent physical strength and stability at high temperature and it is an environmental friendly flexible material. In order to improve the conductivity, silver nanowire (AgNW) and/or graphene were introduced to the BC membrane. The aspect ratio of the AgNW synthesized in this study was 214, with a length of $15{\mu}m$ and width of 70 nm. The higher aspect ratio improved the conductivity by reducing the contact resistance. The thermal and electrical properties of 7 types of films prepared were investigated. Each film was fabricated with rectangular shape ($2mm{\times}2mm{\times}50{\mu}m$). The films were scored with a net shape by a knife, and filled with AgNW and graphene to bestow conductivity. The film filled with AgNW showed favorable electrical characteristics with a thickness of $350{\mu}m$, electron concentration of $1.53{\times}10^{19}$, electron mobility of $6.63{\times}10^5$, and resistivity of 0.28. The film filled with graphene had a thickness of $360{\mu}m$, electron concentration of $7.74{\times}10^{17}$, electron mobility of 0.17, and resistivity of 4.78. The transmittances at 550 nm were 98.1% and 80.9%, respectively. All the films were able to light LEDs bulbs although their brightness differed. A thermal stability test of the BC and PET films at $150{\pm}5^{\circ}C$ showed that the BC film was more stable, whereas the PET film was quickly banded. From these results, it was confirmed that there it is possible to fabricate new transparent conductivity films based on BC.

• Membrane Journal
• /
• v.28 no.1
• /
• pp.67-74
• /
• 2018

In the molecular dynamics study of polymeric membranes, it is very important to select the proper length of the polymer main chain because it requires a large number of constituent atoms and a long time to simulate the permeation behavior. In this study, we tried to investigate how the correlation between polymer main chain length and permeation behavior appears in actual molecular dynamics simulation results. Molecular dynamics were performed using the widely known commercial polymer Kapton(R) polyimide structure and the gas permeation behavior was simulated. The movement of the polymer main chain was not related to its length and the short main chain length did not act more actively. In addition, unlike the prediction that the end group of the polymer main chain is relatively easy to move, there are many cases where the atoms located at the middle of the polymer main chains have a higher movement than the atoms located at the end groups. Finally, permeabilities of the gas molecules was not affected by the length of the main chain and the end groups of the polymer, which indicates that the end effect should be carefully mentioned and followed by the verification process.

• Korean Journal of Materials Research
• /
• v.2 no.1
• /
• pp.76-82
• /
• 1992

Deposition of $TEOS-O_3$ oxide film as inter-metal dielectric layer shows the substrate dependency according to the substrate material and pattern density and pitch size. To minimize substrate and Pattern dependency, TEOS-base and $SiH_4-base$ Plasma oxide were predeposited as underlying material on the substrate. The substrate dependency of $TEOS-O_3$ oxide film was more significant on TEOS-base plasma oxide than on $SiH_4-base$ plasma oxide. The dependency of $TEOS-O_3$ oxide film was remarkably reduced, or nearly eliminated, by $N_2$plasma treatment on TEOS-base plasma oxide, which appears to be caused by the O-Si-N structure, observed on the the surface of TEOS-base plasma oxide.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.12
• /
• pp.68-74
• /
• 1998

Improved performance and suppressed short-channel effects of polysilicon thin film transistors (poly-Si TFTs) with very thin electron cyclotron resonance (ECR) $N_2$O-plasma gate oxide have been investigated. Poly-Si TFTs with ECR $N_2$O-plasma oxide ($N_2$O-TFTs) show better performance as well as suppressed short-channel effects than those with conventional thermal oxide. The fabricated $N_2$O-TFTs do not show threshold voltage reduction until the gate length is reduced to 3 ${\mu}{\textrm}{m}$ for n-channel and 1 ${\mu}{\textrm}{m}$ for p-channel, respectively. The improvements are due to the smooth interface, passivation effects, and strong Si ≡ N bonds.

• Korean Journal of Materials Research
• /
• v.1 no.1
• /
• pp.46-53
• /
• 1991

The stress of PSG (Phosphosilicate glass), USG (Undoped-silicate grass) and SiN films, which are mainly used as passivation layers in semiconductor memory devices, deposited by CVD methods has been studied as a function of film thickness and holding time in air. The stress of the PSG film or the USG film is increased in tensile state with increasing film thickness. On the other hand the stress level of the SiN film in compressive stress does not change as film thickness changes. The stress of PSG film shows the drastic change from the tensile stress to the compressive stress after the film is left 2 days in air. FTIR spectra indicated that the stress variation was due to the penetration of water molecule. It looks possible to recover the stress of about $2.5{\times}{10^9}dyne/cm^2$ by annealing treatment at $300^{\circ}C$ for 20min. The total stress of multi-layered films having the PSG film is determined mainly by the stress variation of PSG layer with holding time. The total stress of multi-layered film appears to have a functional relationship with the stress in the thickness of each film. The resistance against stress-migration of sputtered Al line increases with increasing the tensile stress for the PSG film or the USG film.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.4
• /
• pp.799-804
• /
• 2016

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.