• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.145-150
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best annealing conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to annealing conditions$(200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C)$.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.15-19
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• 2006

The resistance switching characteristics of amorphous $SiO_2$ and poly-crystalline $TiO_2$ were investigated. Both films exhibit well defined switching characteristics with low and high resistance states. From I-V curve analyses, it was found that the low resistance states of both films obey an ohmic conduction mechanism and the high resistance states show generation of a Schottky potential barrier. Regarding the mechanism for resistance switching of the binary oxide, it is suggested that the generation and annihilation of potential barriers accounts for the changes to the high resistance state and low resistance state, respectively. The device operation characteristic parameters such as reset and set voltages of $TiO_2$ are distinctly smaller than those of $SiO_2$, indicating that the values are related to the dielectric constant.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.221-225
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• 2003

The MFIS-FET(Field Effect Transistor) devices using $BLT/Y_2O_3$ buffer layer on p-Si(100) substrates were fabricated by the Sol-Gel method and conventional memory processes. The crystal structure, morphologies and electrical properties of prepared devices were investigated by using various measuring techniques. From the C-V(capacitance-voltage) data at 5V, the memory window voltage of the $Pt/BLT/Y_2O_3/si$ structure decreased from 1.4V to 0.6V with increasing the annealing temperature from $700^{\circ}C\;to\;750^{\circ}C$. The drain current (Ic) as a function of gate voltages $(V_G)$ for the $MFIS(Pt/BLT/Y_2O_3/Si(100))-FET$ devices at gate voltages $(V_G)$ of 3V, 4V and 5V, the memory window voltages increased from 0.3V to 0.8V as $V_G$ increased from 3V to 5V.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.12
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• pp.115-124
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• 2004

In this paper, we introduce the advanced compact transmission line with periodic stepped stubs. They are more effective than normal stubs in ATL. The short stepped stubs loading of transmission line work as effective shunt capacitance and that was proved by equivalent circuit based on transmission line theory and quasi-static analysis. And the compact branch-line coupler and the compact rat-race coupler via proposed compact microstrip line were designed at 1.8 ㎓. They have 677 ㎟ and 913 ㎟, respectively, and they are 62% and 45% of normal design.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.913-919
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• 2008

A new design and its experimental results of a microstrip-fed ultra-wideband tapered slot antenna(TSA) for millimeter-wave systems are presented. By utilizing the ultra-wideband microstrip-to-CPS transition(balun), ultra-wideband characteristics of the inherent TSA are retrieved. Also, the design procedure of the TSA is simplified by performing simple impedance matching between balun and antenna. The proposed TSA is shaped by using the Fermi-Dirac tapering function and corrugated at the outer edge. The implemented antenna demonstrates ultra-wideband performance for frequency ranges from 23 to over 58 GHz with the relatively high and flat antenna gain of 12 to 14 dBi and low sidelobe levels. In addition, a 4-element linear antenna array for phased-array systems and mm-wave sensor applications is also presented.

• Polymer(Korea)
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• v.29 no.4
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• pp.418-421
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• 2005

Three-dimensional (3D) microfabrication process using two-photon polymerization (TPP) is developed to fabricate the curved microstructures in a layer, which can be applied potentially to optical MEMS, nano/micro-devices, etc. A 3D curved structure can be expressed using the same height-contours that are defined by symbolic colors which consist of 14 colors. Then, the designed bitmap figure is transformed into a multi-exposure voxel matrix (MVM). In this work a multi-exposure voxel matrix scanning method is used to generate various heights of voxels according to each laser exposure time that is assigned to the symbolic colors. An objective lens with a numerical aperture of 1.25 is employed to enlarge the variation of a voxel height in the range of 1.2 to 6.4 um which can be controlled easily using the various exposure time. Though this work some 3D curved micro-shapes are fabricated directly to demonstrate the usefulness of the process without a laminating process that is generally required in a micro-stereolithography process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.307-311
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• 2012

In this paper, a novel particle swarm optimization method based on IE3D is used to design a mobile communication Microstrip Patch Antenna. The aim of the thesis is to Design and fabricate an inset fed rectangular Microstrip Antenna and study the effect of antenna dimensions Length (L), Width (W) and substrate parameters relative Dielectric constant (${\varepsilon}r$), substrate thickness on Radiation parameters of Band width. When the antenna was designed, a dual-band, dual-polarized antenna was used to secure the bandwidth and improve performance, and a coaxial probe feeding method so that the phased array of antenna is easy.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.71-75
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• 2006

The yellow emitting OLED using GDI602:Rubrene(10%) material has been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenyl-amine] as a hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl -4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, yellow emission material was deposited using GDI602 as a host material and Rubrene(10%) as a dopant. Finally, small molecular OLED with the structure of $ITO/2-TNATA/NPB/GDI602:Rubrene(10%)/Alq_{3}/LiF/Al$ was obtained by in-situ successive deposition of $Alq_{3}$, LiF and Al as the electron transport material, electron injection material and cathode. The yellow OLED fabricated in our experiments showed the color coordinate of CIE(0.50, 0.49), the luminance of $2300\;Cd/m^{2}$ and the power efficiency of 0.7 lm/W at 10 V with the peak emission wavelength of 562 nm.

• Journal of the Korean Magnetics Society
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• v.6 no.6
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• pp.367-374
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• 1996

The developmement of electronic machine industries requires miniature of size as well as increasement of driving frequency in electronic parts, recently. To realize micro-struture of magnetic devices, in this study, we fabricated thin film inductors by using thin film manufacturing techniques such as photolithography and wet etching process, and these devices are measured at high frequency range of 1 MHz~1 GHz. The results are as follows. The accurate measuring technique by using network analyzer system having microstrip line was established. The manufactured inductors are fabricated with several ten micrometers by means of wet etching process known as easier and more economic than dry etching process. VVhen the device size of two types (spiral, meander) is the same, inductance value L and quality factor Q of spiral type devices are larger than those of meander type, but driving frequency of spiral type is lower than that of meander type due to increasement of inductance L. It is necessary to decrease resistance value R by increasing cross section of the conductor film coil. Thus high frequency measuring method would be a very useful for another measuring fields of the range over several hundreds MHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.303-303
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• 2013

표면에 부착된 나노/마이크로 입자는 다양한 분야에서 오염물질로 작용한다. 특히 형상이 미세하고 공정 단계가 복잡한 반도체 및 디스플레이 등의 전자 소자 공정에서 미치는 영향이 크다. 따라서 입자상 오염물질의 제거에 관하여 상용화된 습식 세정 방법이 다양하게 존재하지만 표면 손상, 화학 반응, 부산물, 세정 효율 등 여러 가지 문제점이 있어 새로운 세정 방법이 요구된다. 이에 건식 세정 방법, 그 중에서도 입자의 충돌을 통해 제거하는 방법인 에어로졸 세정, 필렛 세정 등이 개발되었으나 마이크로 크기로 생성되는 입자로 인하여 형상의 손상이 크다. 따라서 본 연구에서는 나노 단위로 기체/고체 혼합물만 생성하여 세정하는 가스 클러스터 세정 방법을 이용하여 이러한 문제점을 해결하고자 하였다. 클러스터 세정 장비를 이용한 표면 처리는 충돌에 의한 제거에 기반한다. 따라서 생성 및 가속되는 클러스터로부터 대상으로 전달되는 운동량의 정도가 세정 특성에 영향을 미치며 이는 생성되는 클러스터의 크기에 종속적이다. 생성 클러스터의 크기 분포는 분사 거리, 유량, 분사 각도, 노즐 냉각 온도 등의 변수에 관한 함수이다. 따라서 본 연구에서는 $CO_2$ 클러스터를 이용한 세정 특성을 정의 및 제어하기 위하여 생성되는 클러스터 특성에 관하여 이론적, 수치 해석적, 실험적 연구를 수행하였다. 먼저, $CO_2$의 물리적 특성 및 이를 이용한 특정 크기 오염 물질을 제거하는데 요구되는 임계 클러스터 크기 계산을 이론적으로 구하였다. 이는 오염물질의 부착력과 클러스터의 운동량 전달에 의한 제거력의 비교를 통해 이루어졌다. 두 번째로 클러스터 크기분포를 수치 해석적으로 예측하기 위하여 각 조건에 대하여 유동해석을 수행하고 이를 통해 구해진 노즐 내 기체의 냉각 속도를 GDE (General Dynamic Equation) 계산에 대입하여 구하였다. 마지막으로 PBMS(Particle Beam Mass Spectrometer)를 이용하여 실험적으로 클러스터 크기분포를 각 조건에 대하여 구할 수 있었다. 또한 크기 분포 경향에 대한 간접적 확인을 위하여 포토레지스트가 코팅된 웨이퍼에 클러스터의 충격으로 생성된 크레이터 크기의 경향을 분석하였다. 이와 같은 방법에 의하여 생성되는 클러스터는 노즐의 유량 증가, 온도 상승에 각각 비례하여 작아지는 것을 확인할 수 있었다.