• Journal of the Institute of Electronics and Information Engineers
• /
• v.54 no.1
• /
• pp.11-17
• /
• 2017

In this paper, an 8-direction switched beamforming antenna system at 28GHz frequency band is described for 5th generation wireless communication. This system is composed of an $8{\times}8$ Butler matrix and an 8-element patch array antenna. The antenna system switches beams in 8-direction in the wide range of ${\pm}40^{\circ}$. The antenna spacing is $0.65{\lambda}$ to achieve ${\pm}40^{\circ}$ steering range. Designed results show that the 8-direction beams are placed at ${\pm}6^{\circ}$, ${\pm}17^{\circ}$, ${\pm}28^{\circ}$, ${\pm}40^{\circ}$ offset from the center. Parasitic radiation effect from the large dimension Butler matrix need to be suppressed by employing a stripline structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.19 no.8
• /
• pp.927-932
• /
• 2008

We propose a novel $4{\times}4$ Hadamard matrix feed network for a $4{\times}1$ array antenna to form a dual beam. If each element of the array is excited following the elements in a row of the Hadamard matrix, a two-lobed antenna beam can be obtained. The angle between the two lobes can be controlled. The Hadamard matrix feed network consists of four $90^{\circ}$ hybrids, a crossover and four $90^{\circ}$ phase shifters. The array, including the Hadamard matrix feed network, was fabricated on a microstip structure. The measured beam directions of the two lobes are $0^{\circ}$, ${\pm}15^{\circ}$, ${\pm}33^{\circ}$, ${\pm}45^{\circ}$ depending on the choice of the input port of the feed network.

• Aerospace Engineering and Technology
• /
• v.13 no.2
• /
• pp.131-141
• /
• 2014

Synthetic Aperture Radar (SAR) is a powerful and well established microwave remote sensing technique which enables high resolution measurements of the Earth surface independent of weather conditions and sunlight illumination. In this study, this paper first summarizes the basic SAR theory and the history of the SAR satellites. The second part of this paper gives an overview of new technologies for future SAR systems. New innovative concepts and technologies for SAR satellites will be digital beamforming, High Resolution Wide Swath (HRWS), Waveform Encoding, Terrain Observation by Progressive Scan (TOPS), and so on. These technologies will play an important role for future spaceborne SAR satellites.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
• /
• v.2 no.1
• /
• pp.30-36
• /
• 2003

Recently, mechanically beam-steering microstrip patch array antenna using MEMS technology is developed and tested. In this paper as an application of developed antenna, new radiation pattern synthesis method far beam-steering antenna without phase-shifter is proposed, and applied to synthesis of desired beam shape. Niching genetic algorithm using Restricted Competition Selection (RCS) is used for radiation pattern optimization. This approach can be applied to design of array antenna for meet EMC standard and through proposed method specific beam shapes can be synthesized.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.32 no.3
• /
• pp.209-216
• /
• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.7
• /
• pp.612-619
• /
• 2016

In this paper, a dual band electrical beam tilting array antenna with bi-directional directivity is designed. Radiating element operates at dual-resonance frequencies and is designed as planar dipole using PCB. In order to tilt the main beam, the phase delay line is designed by use of only the phase shifting line of a $50\Omega$ microstrip line for broadband. The designed antenna has tilting angle of $0^{\circ}$ to ${\pm}8^{\circ}$. For validation of the designed antenna specification, the array antenna is fabricated and the performances are measured. Comparison between theory and experiment shows good agreement.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1756-1758
• /
• 2003

포항 방사광 가속기의 선형가속기는 2.5GeV 전자빔 용 마이크로웨이브의 발생을 위하여 80MW 급 클라이스트론(klystron) 11대와 입사부 용 65MW 급 클라이스트론 1대를 사용한다. 80-MW 급 클라이스트론 부하를 구동하기 위하여 최대 펄스 정격출력 200 MW(400kv, 500A, 평탄도 4.4 ${\mu}s$)인 대출력 펄스 전원공급 장치(modulator)가 요구된다. 모듈레이터 시스템 용 PFN(pulse forming network) 커패시터의 충전용 입력전원으로써 최대 출력전압 50 kV, ${\pm}$ 0.5% 이내의 전압제어가 가능한 고전압 인버터 전원장치를 적용하여 클라이스트론 부하의 성능시험을 수행하였다. 클라이스트론의 RF 전력과 입력 빔의 특성을 정확히 측정하기 위하여 응답특성이 양호한 측정 장치와 정밀한 측정이 요구된다. 인버터 시스템의 적용에 따른 모듈레이터의 충전 특성을 파악하였으며, 방향성 결합기와 검파기를 설치하여 클라이스트론의 RF 출력을 측정하였다. 본 논문에서는 포항 방사광 가속기의 대출력 펄스 고주파원으로 사용되는 클라이스트론 부하의 성능시험 과정에서 수행하였던 시험장치 개선 및 특성 분석, 고전압(빔전압 320 kV) 및 RF 길들이기의 시험 결과에 관하여 고찰하고자 한다.

• Journal of the Korean Society for Precision Engineering
• /
• v.24 no.8 s.197
• /
• pp.108-115
• /
• 2007

3D nano-scale manufacturing is an important aspect of advanced manufacturing technology. A key element in ability to view, fabricate, and in some cases operate micro-devices is the availability of tightly focused particle beams, particularly of photons, electrons, and ions. The use of ions is the only way to fabricate directly micro-/ nano-scale structures. It has been utilized as a direct-write method for lithography, implantation, and milling of functional devices. The simulation of ion beam induced physical and chemical phenomena based on sound mathematical models associated with simulation methods is presented for 3D micro-/nanofabrication. The results obtained from experimental investigation and characteristics of ion beam induced direct fabrication will be discussed.

• Journal of the Korean Society for Precision Engineering
• /
• v.24 no.10
• /
• pp.109-116
• /
• 2007

Focused ion beams are a potential tool for micro/nano structure fabrication while several problems still have to be overcome. Redeposition of sputtered atoms limits the accurate fabrication of micro/nano structures. The challenge lies in accurately controlling the focused ion beam to fabricate various arbitrary curved shapes. In this paper a basic approach for the focused ion beam induced direct fabricate of fundamental features is presented. This approach is based on the topography simulation which naturally considers the redeposition of sputtered atoms and sputtered yield changes. Fundamental features such as trapezoidal, circular and triangular were fabricated with this approach using single or multiple pass box milling. The beam diameter(FWHM) and maximum current density are 68 nm and $0.8 A/cm^2$, respectively. The experimental investigations show that the fabricated shape is well suited for the pre-designed fundamental features. The characteristics of ion beam induced direct fabrication and shape formation will be discussed.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.16 no.5
• /
• pp.129-133
• /
• 2007

Focused Ion Beam(FIB) systems is a useful tool for the fabrication of micro-nano scale structures. In this study, the effects of FIB etching on the Au microstructure are systematically investigated. As the fabrication parameters, ion dose, dwell time and beam overlap ratio are studied. First, the increases of Ga ion dose makes the milling yield higher and the sidewall of milling profile steeper. Dwell time is found to have little effects on the milling profile due to the relatively large milling area of $1\times1{\mu}m^2$ used in this study. However, beam overlap significantly affects not only milling rate but also milling profile. As the beam overlap ratio changes from positive to negative, the development of regular cross-stripe patterns at the bottom with low milling rate is observed.