• Journal of the Korean Geotechnical Society
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• v.27 no.2
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• pp.43-52
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• 2011

The characteristics of shear zone in granular soils largely affect the stability of geo-structures. The goal of this study is to evaluate shear zone in a direct shear test using shear wave, electrical resistivity, and cone tip resistance. Bender elements and electrical resistivity probe are embedded into the wall of a direct shear box made of transparent acrylic material to estimate the shear wave velocities and the electrical resistivity at shear and non-shear zones. At the point of peak and residual strength, micro cone penetration test which can be available to measure tip resistance has been performed. Experimental results show that the shear wave velocities at upper shear zone increase during shearing while the values remain constant at bottom and lower shear zone. Also, resistivities at lower shear zone depend on relative density while resistivities at bottom remain constant. The results of cone penetration test demonstrate the correlation of the cone tip resistance and small strain shear modulus at shear zone. This study suggests that the application of the modified direct shear box including shear wave, electrical resistivity and the micro cone tip resistance may become effective tools for analyzing the characteristics of a shear zone.

• Journal of Korean Tunnelling and Underground Space Association
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• v.19 no.4
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• pp.635-650
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• 2017

Acoustic emission (AE) sensors have broadly used to monitor the damage of underground structures and tunnels. The reliability of measured signal is determined by the coupling condition of the AE sensors which are embedded in the target underground structure. To secure the reliability of health monitoring results, it is important to understand the characteristics of the coupling materials. In this study, laboratory tests were performed using portland cement, micro cement, and gypsum as coupling materials in order to verify the bleeding characteristics. The effective parameters for bleeding were determined to be water-cement ratio, material type, curing time, and injected volume of coupling materials. As a results of the experimental study, the bleeding rate increases with an increase in a water-cement ratio and an injected volume; for portland cement, water-cement ratio and injected volume effects are larger than the micro cement. However, curing time is not much effective for occurrence of the bleeding phenomenon. It is anticipated that this study may be useful for the selection of suitable coupling materials for installation of acoustic emission sensors.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.19-23
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• 2015

In this study, two types of Au/TiW bump samples were fabricated by the electroplating process onto Al/Si and SiN/Si wafers for the COG (Chip On Glass) packaging. TiW was used as the UBM (Under Bump Metallurgy) material of the Au bump and it was deposited by a sputtering method under the sputtering powers ranges from 500 to 5000 Watt. We investigated the delamination phenomenas for the prepared samples as a function of the input sputtering powers. The stable interfacial adhesion condition was found to be 1500 Watt in sputtering power. In addition, the SAICAS (Surface And Interfacial Cutting Analysis System) measurement was used to find the adhesion strength of Au bumps for the prepared samples. TiW UBM films were deposited at the 1500 Watt sputtering power. As a results, there was a similar adhesion strengths between TiW/Au interfacial films on Al/Si and SiN/Si wafers. However, the adhesion strength of TiW UBM sputtering films on Al and SiN under films were 2.2 times differences, indicating 0.475 kN/m for Al/Si wafer and 0.093 kN/m for SiN/Si wafer, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.37-45
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• 2004

Electroless Ni(P) has been widely used for under bump metallization (UBM) of flip chip and surface finish layer in microelectronic packaging because of its excellent solderability, corrosion resistance, uniformity, selective deposition without photo-lithography, and also good diffusion barrier. However, the brittle fracture at solder joints and the spatting of intermetallic compound (IMC) associated with electroless Ni(P) are critical issues for its successful applications. In the present study, the mechanism of IMC spatting and microstructure change of the Ni(P) film were investigated with varying P content in the Ni(P) film (4.6,9, and $13 wt.\%$P). A reaction between Sn penetrated through the channels among $Ni_3Sn_4$ IMCs and the P-rich layer ($Ni_3P$) of the Ni(P) film formed a $Ni_3SnP$ layer. Thickening of the $Ni_3SnP$ layer led to $Ni_3Sn_4$ spatting. After $Ni_3Sn_4$ spatting, the Ni(P) film directly contacted the molten solder and the $Ni_3P$ phase further transformed into a $Ni_2P$ phase. During the crystallization process, some cracks formed in the Ni(P) film to release tensile stress accumulated from volume shrinkage of the film.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.3 s.357
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• pp.7-17
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• 2007

An analysis and design theory of an aperture-coupled cavity-fed back-to-back microstrip directional coupler is presented for the efficient and optimized design. For this purpose, an equivalent network is developed, and simple but accurate calculations of circuit element values are described. Design equations of the coupler are derived based on the equivalent circuit. In order to determine various structural design parameters, the evolutionary hybrid optimization method based on the genetic algorithm and Nelder-Mead method is invoked. As a validation check of the proposed theory and optimized design method, a 10 dB directional coupler was designed and fabricated. The measured coupling was 10.3 dB at 3 GHz, and the return loss and isolation were 31.8 dB and 30.5 dB, respectively. The directional coupler also showed very good quadrature phase characteristics. Good agreements between the measured and the design specifications fully validate the proposed network analysis and design procedure.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.27-32
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• 2001

The effect of $V_2O_5$, a donor-type dopant on the degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was compared with Ta$_2$O$_{5}$ doped ($Zr_{0.8}, Sn_{0.2})TiO_4$ in terms of microstructure, electrical conductivity, and oxidation state of the dopant. It is well known that the addition of the donor type species such as $Ta_2O_5,Nb_2O_5, Sb_2O_5, WO_{3}$, increases the quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$due to decrease the oxygen vacancy concentration. Unlike other dopants, however, the addition of $V_2O_5$ decreased the quality factor. The degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was resulted from the formation of grain boundary phase and $V_2O_5$rich fiber shaped secondary phase, and the increasing the oxygen vacancy concentration due to unstability of oxidation state of vanadium ions in ($Zr_{0.8}, Sn_{0.2})TiO_4$ceramic.c.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.43-48
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• 2007

This study is focused on the effect of the surface properties for the post electrode, which is used in pad formation consisted of SMT such as IC, passive component, combined with fired LTCC substrate, We carried out the surface microstructure of sintered electrode and the basic reliability evaluations with sample fired by microwave sintering to solve the problems occurred in post electrode by electric sintering. We evaluated surface densification status of post electrode according to various conditions of microwave sintering. In additions, it is obtained strong effect on blister improvement of post electrode because of over-sintering and the insufficient out gas in bum out process. As a result of adhesion strength, we confirmed $44.3N/mm^2$ in microwave sintering and $34.5N/mm^2$ in electric sintering, respectively. This result will be used for the basic reliability test. Finally, microwave sintering seems to be economic in process time with 30 min compared to electric sintering with 10 hr. In terms of Mass production and efficiency, microwave sintering are excepted to be higher than electric sintering.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.33-39
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• 2015

$BaTiO_3$ is typical ferromagnetic materials with dielectric constant of above 200. $BaTiO_3$ nanoparticles applications are available for multiple purposes such as nanocapacitors, ferroelectric random access memories, and so on. Applications are is diverse from the dispersion of nanoparticles depending on the route of synthesis. In this study, $BaTiO_3$ nanoparticles were synthesized by two different methods such as oxalate method and sol-gel process (ambient condition sol method). Particle size and dispersion condition were studied according to the preparation method and capping agent. Poly vinyl pyrrolidone (PVP) was used as a capping agent in oxalate method and tetrabutylammonium hydroxide (TBAH) used as a capping agent in sol-gel process each. Cubic crystal structure of $BaTiO_3$ phase could be confirmed by X-ray diffraction analysis. Fourier transform-infrared spectroscopy was employed for the confirmation of the capping agent and $BaTiO_3$ nanoparticles. The particle size and distribution analysis was also performed by particles size analyzer and scanning electron microscope.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.187-196
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• 2005

MEMS devices such as a vibratory gyroscope often suffer from a lower yield rate due to fabrication errors and the external stress. In the decoupled vibratory gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, fabricated with SOI (Silicon-On-Insulator) wafer and packaged using the anodic bonding, has a large wafer bowing caused by thermal expansion mismatch as well as non-uniform surfaces of the structures caused by the notching effect. These effects result in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) technology. It uses a silicon wafer and two glass wafers to minimize the wafer bowing and a metallic membrane to avoid the notching. In the packaged SiOG gyroscope, the notching effect is eliminated and the warpage of the wafer is greatly reduced. Consequently the frequency difference is more uniformly distributed and its variation is greatly improved. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.29-35
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• 2003

The Sn-based lead-free solders with varying microstructure were prepared by changing the cooling rate from the melt. Bulky as-cast SnAg, SnAgCu, and SnCu, alloys were cold rolled and thermally stabilized before the creep tests so that there would be very small amount of microstructural change during creep (TS), and thin specimens were water quenched from the melt (WQ) to simulate microstructures of the as-reflowed solders in flip chips. Cooling rates of the WQ specimens were 140∼150 K/sec, and the resultant $\beta-Sn$ globule size was 5∼10 times smaller than that of the TS specimens. Subsequent creep tests showed that the minimum strain rate of TS specimens was about $10_2$ times higher than that of the WQ specimens. Fractographic analyses showed that creep rupture of the TS-SnAgCu specimens occurred by the nucleation of voids on the $Ag_3Sn$ Sn or $Cu_6Sn_5$ particles in the matrix, their subsequent growth by the power-law creep, and inter-linkage of microcracks to form macrocracks which led to the fast failure. On the other hand, no creep voids were found in the WQ specimens due to the mode III shear rupture coming from the thin specimens geometry.