• 한국정밀공학회지
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• 제23권3호
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• pp.56-60
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• 2006

A high-resolution shadow mask, or called a nanostencil was fabricated for high resolution lithography. This high-resolution shadowmask was fabricated by a combination or MEMS processes and focused ion beam (FIB) milling. 500 nm thick and $2{\times}2mm$ large membranes wore made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane. By local deposition through the apertures of nanostencil, nanoscale patterns down to 70 nm could be achieved.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.871-874
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• 2004

Fabrication of a high-resolution shadow mask, or called nanostencil, is presented. This high-resolution shadowmask is fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. 500 nm thick and 2x2 mm large membranes are made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. Subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to high resolution of FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane.

• 한국정밀공학회지
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• 제33권10호
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• pp.845-850
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• 2016

A direct laser lithography system is widely used to fabricate various types of DOEs (Diffractive Optical Elements) including lenses made as CGH (Computer Generated Hologram). However, a parametric study that uniformly and precisely fabricates the diffractive patterns on a large area (up to $200mm{\times}200mm$) has not yet been reported. In this paper, four parameters (Focal Position Error, Intensity Variation of the Lithographic Beam, Patterning Speed, and Etching Time) were considered for stabilization of the direct laser lithography system, and the experimental results were presented.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2004년도 학술대회지
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• pp.17-24
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• 2004

Surrface texturing of tribological application is another attractive technology of friction reducing. Also, reduction of friction is therefore considered to be a necessary requirement for improved efficiency of machine. In this paper attempts to investigate the effect of density for micro-scale dimple pattern using photolithography on bearing steel flat mated with pin-on-disk. We demonstrated the lubrication mechanism for a Stribeck curve, which has a relationship between the friction coefficient and a dimensionless parameter for lubrication condition. It is found that friction coefficient is depended on the density of surface pattern. It was thus verified that micro-scale dimple could affect the friction reduction considerably under mixed and hydrodynamic lubrication conditions from based on friction map. Lubrication condition regime has an influence on the friction coefficient induced the density of micro dimple.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2012년도 춘계학술논문집 2부
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• pp.712-715
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• 2012

본 논문에서는 EM 시뮬레이터를 이용하여 LTE2300 대역의 마이크로스트립 라인 대역여파기를 설계하고 시편을 제작하였다. 중심주파수 2300MHz, 대역폭 350MHz, 삽입손실 1.5dB, 감쇄는 1930MHz와 2690MHz에서 15dB 이상, 1000MHz에서 60dB 이상으로 설계하였다. 또한 반사손실은 15dB로 설계하였다. 구현은 유전율 9.8인 알루미나 유전체에서 하였으며, 전송선로와 접지는 silver paste를 사용하였다. EM 시뮬레이션을 통해 얻은 결과값과 이를 통해 실제 제작된 시편의 보정값을 얻어 data base화 하였으며, 좋은 재현성을 얻을 수 있음을 확인하였다. 특히 일반적으로 마이크로스트립 라인 필터의 제작에 적용되는 에칭 또는 포토리소그라피 대신 레이저를 이용하여 패턴을 구현하였으며, 이 또한 우수한 특성과 재현성을 보여주었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.134-136
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• 1993

Microelectronic fabrication technology .is based on the use of lithsgraphy to create small linewidths and patterns that make up ULSI. In previous papers, we discussed the theoretically calculated values such as ion range, ion concentration,ion transmission coefficient and the defocused ion beam-induced characteristics in a-Se$_{75}$Ge$_{25}$. In this paper, the typical Monte Carlo (MC) simulation results and p개cedures for the focused ion beam lithography were presented. The interaction and scattering of ions with the resist depend on the beam energy, impact parameter arid resist parameters. For ion exposure simulations, the quantity of interest is the spatial distribution of energy deposited by ions in the resist due to interaction phenomena with resist ions.s.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.66-66
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• 2006

Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.139-143
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• 2007

The need for technological developments of lithography equipment is urgent for the stable production in response to the rapid growth of the recent display industry. As an example, the products currently in the market face alteration problems resulting from excessive weight of the mask holder part. This is one of obstacle for the automation of the equipment. In response, the mask holder part problem has been minimized through FEM and design of experiments in order to optimize the situation with minimized Deflection and reduced mass for satisfactory replacement of the mask holder part.

• 전자공학회논문지A
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• 제33A권7호
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• pp.198-204
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• 1996

Electron beam lithography is one of the importnat technologies which can delineate deep submicron patterns. REcently, electron beam lithography is being applied in delineating the critical layers of semiconductor device fabrication. In this paper, we present a development simulation program for electron beam lithography and study the development profiles of resist when resist is exposed by the electron beam. Experimentally, the development parameter of positive and negative resists are measured and the data is applied to input parameter of the simulation program. Also simulation results are compared of the process results in the view of resist profiles. As a result, for PMMA and SAL 601 resist, the trend of simulation to the values of process parameters agree with real process results very well, so that the process results can be predicted by the simulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.768-771
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• 2003

Nowadays, the study on the ceramic components and modules used in telecommunication system is being performed. Duplexer is the one of the most important components and has the role of dividing Rx and Tx signal. Duplexer including the FBAR is being done vigorously LTCC is used for package like SAW package, duplexer package. In our research, LTCC material is used for FBAR duplexer package and photo-lithography for the fine line phase shifter. The good characteristics, low loss and good isolation, of duplexer is obtained by the fine line phase shifter having high characteristic impedance of stripline.