• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.487-487
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• 2006

• Korean Journal of Optics and Photonics
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• v.19 no.2
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• pp.140-143
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• 2008

The integrated external cavity laser has been fabricated with a 1550 nm FP-LD, an optical filter, a micro ball lens and accurate ceramic blocks using a micro-block stacking (MBS) technique. The integrated external cavity laser module whose size is only $2.0{\times}2.1{\times}0.7\;mm^3$ has been mounted on the TO-CAN package. For the case of the 1.8% transmission filter, the single mode characteristic has been obtained with the optical power of -27.1 dBm and the SMSR of 31.7 dB.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.133-137
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• 2001

The properties of TiC/Al surface alloy prepared using a high power $CO_2$-laser was investigated. To analyze this process, the physical properties between substrate [Al] and TiC powder were measured. Surface layer size profiles, optical absorption rate and powder efficiency were measured as afunction of the laser output in TiC/Al matrix. Regardless of TiC powder existence, the absorption rate in substrate Al was decreased when laser output increased. When the laser output increased in the range of 2kW to 4.5 kW, the powder efficiency increased from 4% to 12%. However, TiC powder were not melted in molten aluminum. As a result, increased powder particles easily penetrated to the surface layer and created a two phase states in the metal matrix.

• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.135-141
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• 1990

Optical nonlinearity of laser heated Si with thickness of 160$\mu$m is investigated by pump-probe method. Si is heated by pdsed Nd:YAG laser of $TEM_{00}$-mode with pulse duration of 180$\mu$sec. Temperature change is monitored by observing transmittance change of probe light whose wavelength lies near band gap of Si. It is found that temperature rise is linearly proportional to incident laser intensity and the maximum temperat~re increment is measured to be $16^{\circ}C$ for the maximum incident intensity of 25KW/$\textrm{cm}^2$. From these results, the third order nonlinear susceptibility .d3) at the wavelength of 1.06$\mu$mis estimated to be $6.6\times10^{-5}$esu due to laser heating.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.423-426
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• 2005

A new chip on glass(COG) technique by making use of a high power diode laser for LCD driver IC packaging of LCD has been developed. A laser joining technology of the connection of IC chip to glass panel has several advantages over conventional method such as hot plate joining: shorter process time, high reliability of joining, and better fur fine pitch joining. The reach time to cure temperature of ACF in laser joining is within 1 second. In this study, results show that the total process time of joining is reduced by halves than that of conventional method. The adhesion strength is mainly 100-250 N/cm. It is confirmed that the COG technology using high power diode laser joining can be applied to advanced LCDs with a fine pitch.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.360-364
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• 2000

We demonstrate self-starting passIve mode locking of a Cr:LiSAF laser, using a SCIDlconduclor Saturable Absorber Mirror (SESAM), Two high-power red semiconductor lasers (Coherent S-67-500C-100-H) of wavelength 667 nm and maximum power of 500 mW were used as pump lasers, The cavity has 10 cm radius-ai-curvature folding minors, two SF 10 prisms, a 99% reflectivity output coupler and a SESAM at dIe focus of a 10 cm radIus-at-curvature mirror. We used the laser crystal in BrewsterBrewster shape with 1 5% $Cr^{+3}$ ion concentration and the length of 6 mm, An X-shaped resonator was used to compensate the astigmatism induced by tile crystal. The structure of the SESAM cOllSists of 30 pmr of $AlAs/Al_{0.15}Ga_{0.85}As$ layer, wi1l1 a 10 nm GaAs quantum well situated in the topmost layer Output spectra were centeled at 833 nm, with 4 nm spectral bandwidth and pulse width was measured to be 220 fs, Output power of 3 mW is obtained at a pump power of 800 mW. 00 mW.

• Korean Journal of Optics and Photonics
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• v.17 no.1
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• pp.75-80
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• 2006

We studied feasibility of three-dimensional optical memory by utilizing femtosecond laser-induced changes of transmission in photopolymers and photoluminescence in Eu and Sm ion doped sodium borate glasses. We produced transmission change by two photon absorption and obtained sub-Um size spots in photopolymers using 780 nm modelocked Ti-sapphire laser pulses. We also changed valence state of Eu and Sm ions by multi-photon absorption and achieved $\~{\mu}m$ sized spot formation in Sm-doped glasses.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.68-72
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• 1997

Using one of the absorption lines of $^{13}C_2H_2$ molecules near the zero dispersion wavelength(1549.49nm) of dispersion shifted fiber, we stabilized center frequency of an optical fiber Fabry-Perot filter. The free spectral range of the filter is 100 GHz for 100 GHz channel allocation. For equi-spaced three channel multiplexing, channel locking of three DFB-LDs to transmission peaks of the fiber Fabry-Perot filter was tried. To investigate the effect of dithering current applied to each DFB-LD, the change of DFB-LD linewidth was measured.

• Journal of the Korean Society of Propulsion Engineers
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• v.13 no.4
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• pp.36-44
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• 2009

Spray cross-section was measured by the Optical Line Patternator (OLP) and Optical Tomography at high ambient pressure. The laser line beam passed through the spray region, then Mie scattered signal and transmitted light were captured. The measured signal was processed to obtain a distribution of attenuation coefficient in spray cross-section. Beer-Lambert's law and mathematical reconstruction methods were used to reconstruct the distribution of attenuation coefficient. Spray became dense at high pressure and attenuation of scattered signal occurred seriously. OLP method, which uses Mie scattered signal, showed limit in compensating attenuation problem in dense spray region. Optical tomography reconstructed spray cross-section well, from transmission rate of light penetrating spray region.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.62-63
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• 2000

다양한 분야의 요구에 따라 반사율이 99.995% 이상인 고반사 저손실 반사경의 제작이 가능해 지면서 반사경의 산란, 투과, 흡수 및 손실 등을 측정하는 여러 측정 방법들도 더불어 연구되어 왔다. 적용 분야에 따라 사용될 반사경의 특성이 결정되는데 그 중 중력파 측정 장치$^{(1)}$ , 광자 감쇠 분광기$^{(2)}$ 등의 분야에서는 투과, 산란 및 흡수가 모두 작은 저손실 반사경을 요구한다. 한편 링 레이저 자이로스코프의 경우 반사경의 산란이 곧 lock-in을 결정하여 성능을 제한하는 중요한 변수가 된다. 따라서 이 응용의 경우 반사경의 산란을 정확히 측정하는 일은 중요하며 위치에 따른 산란분포 정보를 알면 링 레이저 자이로스코프의 성능 예측과 개선이 더욱 쉬워진다. 산란을 측정하는 직접적인 방법에는 ARS(angle resolved scattering)과 TIS(total integrated scattering)이 있는데, 본 연구에서는 TIS 측정 장비를 반사경의 위치에 따른 산란분포까지 측정할 수 있도록 mapping 기능을 첨가하고 이온빔 스퍼터링에 의해 제작된 저산란 반사경을 측정하기 위해 높은 분해능을 갖도록 구성하였다. 반사경의 응용분야의 필요에 의해 45$^{\circ}$ 산란을 측정하였다. (중략)