• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.2
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• pp.119-124
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• 2013

In this study, the two-dimensional transient temperature of printed Ag nanoparticle ink during continuous wave laser sintering was calculated. Ag nanoparticle ink was printed on a glass substrate by inkjet printing. Then, a 532-nm continuous wave laser with different laser intensities was irradiated on the printed Ag nanoparticle ink for 60 s. During laser irradiation, the in-situ specific resistance of the sintered ink was measured. To obtain the transient temperature of the sintered ink during the laser sintering process, a two-dimensional transient heat conduction equation was derived by applying the Wiedemann-Franz law. It was found that the specific resistance of the sintered ink decreased with an increase in the sintering temperature of the printed ink.

• Journal of Advanced Marine Engineering and Technology
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• v.35 no.8
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• pp.1048-1054
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• 2011

Laser surface hardening process is the method of hardening surface by inducing rapid self quenching of laser injected area through transfer of surface heat to inside after rapid heating of laser injected area only by high density energy heat source. This surface treatment method does not involve virtually any thermal deformation by heat treatment nor accompanies any other process after surface hardening treatment. In addition, allowing local machining, this method is a surface treatment method suitable for die with complicated shape. In this study, die material cast iron was surface-treated by using high power diode laser with beam profile suitable for heat treatment. Since the shapes of die differ by press die process, specimens were heat-treated separately on plane and corner depending on the applied parts. At this time, corner heat treatment was done with optic head inclined at $10^{\circ}$. As a result, corner heat treatment easily involves concentration of heat input due to limitation of heat transfer route by the shapes compared with plane part, so the treatment accomplished hardening at faster conveying speed than plane heat treatment.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.145-146
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• 1997

수소화된 비정질 규소(a-Si:H)는 전자소자에서 광범위하게 사용되고 있다. 하지만 a-Si:H는 반송자 이동도가 느리고 불안정하기 때문에 그 특성개선이 요구되어진다. 본 논문은 금속기판 Mo위에 a-Si:H를 성장하고 후속 결정화 연구를 수행하였다. a-Si:H 박막은 DC 글로우 방전으로 Mo 기판위에 증착되었다. 실험에 사용되어진 열처리로는 질소분위기, 진공상태, 급속가열 및 엑시머레이저 열처리를 행하였다. 열처리 온도는 10$0^{\circ}C$에서 120$0^{\circ}C$까지 행하였다. 엑시머레이저의 에너지는 단위 펄스당 90에서 340mJ이였다. 결정화에 영향을 주는 요소로는 불순물 주입, 온도, 박막의 두께 및 열처리 시간등을 조사하였다. 불순물이 주입된 비정질규소는 진성규소보다 더 좋은 결정화를 보였다. 불순물 주입은 낮은 온도에서의 결정화에 도움을 주었다. 열처리 시간은 결정화에 큰 영향을 미치지 못하였다. 반면에 열처리 온도는 결정화에 큰 영향을 주었다.

• 한국연소학회:학술대회논문집
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• 1997.06a
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• pp.45-50
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• 1997

An experimental study on LII signal images from soot particles in a flame has been carried out in order to investigate the effect of the incident laser characteristics. By changing the wavelength of the incident laser beam, the LII signal was saturated at smaller laser power with 532 nm than 1,064 nm. This implies that the larger absorption coefficient of soot particles at 532 nm would influence the LII signal characteristic. Using the deconvolution technique, the projected LII line images were coverted to reconstruct the local LII signals inside the beam. The results show that the LII images at ICCD camera result from the integration of LII signal across the laser beam.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.11 no.4
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• pp.528-536
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• 1999

This work studies the effects of transient reflectance on the thermal responses of a metal(gold) thin-film during ultrashort laser heating. The heating process is calculated using the conventional conduction model (parabolic one-step: POS), parabolic two-step model (PTS) with and without variable properties, hyperbolic two-step model (HTS). Results from the HTS model are very similar to those from the PTS model, since the laser heating time in this study is greater than the electron relaxation time. PTS model with variable properties, however, results in totally different temperature profiles compared to those from POS models or calculation with constant properties. Transient reflectances are estimated from electron temperature distributions and based on the linear relationship between the electron temperature and complex dielectric constants. Reflectance of the front surface can be changed with respect to dielectric constants, while those of the rear surface remain unchanged.

• Journal of the Korean Society of Visualization
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• v.8 no.4
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• pp.54-59
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• 2010

A laser moxibustion therapy device having effect similar to that of traditional moxibustion is being developed using 1064 nm infrared laser. The therapy device allows direct interaction of laser light with the tissue rendering temperature distribution both on the skin surface and deep under the skin. We made a device that could measure temperature of deep under the surface of agar gel tissue phantom using thermocouples. A thermal imaging camera was used to verify results from the temperature measurement device. We compared the characteristics of heat transfer inside the tissue phantom during moxibustion and laser irradiation. The temperature distribution measured by thermocouples was found to be similar to that of distribution given by thermal imaging camera.

• Journal of the Korean Society for Nondestructive Testing
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• v.14 no.4
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• pp.219-227
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• 1995

A two-dimensional photoacoustic microscope utilizing photoacoustic signals generated by periodic heating of specimen surface with Argon ion laser and measured by accelerometer has been developed. Several aluminum specimens with various defects have been examined, characteristics of the microscope have been evaluated and optimal experimental conditions have been determined by examining the dependence on several experimental conditions including the modulation frequency and the beam width of laser.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1236-1238
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• 1997

유전체 PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) 박막을 레이저 어블레이션 기법으로 Pt/Ti/$SiO_3$/Si기판을 $500^{\circ}C{\sim}700^{\circ}C$까지 가열한 상태에서 $O_2$분위기에서 증착시켰다. 증착된 박막은 SEM, XRD 등의 구조적 분석을 통하여 $600^{\circ}C$이상에서 증착된 경우, (111)방향으로 우세하게 성장한, 결정성이 양호한 박막임을 확인하였다. 박막의 전기적 특성은, 증착 온도가 $650^{\circ}C$일 때 약 1400정도의 높은 비유전율을 얻었으며, 전하저장밀도는 100[KV/cm]에서 약 9[${\mu}C/cm^2$]이었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.166-166
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• 2010

산업 전반에 걸쳐 중요한 광원인 808 nm 대역의 레이저 다이오드 제작에는 현재 InGaAsP/InGaP/GaAs 및 InGaAlAs/GaAs 양자우물을 이용하여 제작되고 있다. 이는 양자우물과 이를 둘러싸는 장벽물질간의 band-offset이 적어 효율적인 고출력 레이저 다이오드의 제작에 어려움이 있기 때문에 강한 캐리어 구속 효과를 지니는 양자점을 사용하는 것이 고출력 레이저 다이오드를 제작할 수 있는 방법이다. 실험에 사용된 InAlAs 양자점은 Riber사의 compact21 MBE 장치를 사용하여 성장하였으며 GaAs기판을 610도에서 가열하여 표면의 산화층을 제거하고 580도에서 약 100 nm 두께의 GaAs 버퍼층 및 30 nm 두께의 $Al_{0.4}Ga_{0.6}As$층을 성장하였다. GaAs 기판의 온도를 내린 후 migration enhanced epitaxy 방법을 사용하여 InAs 및 AlAs를 번갈아 주입하여 성장하였다. InAlAs 양자점의 성장 중에 InAlAs의 양, 성장 온도, As flux량 및 As 분자 상태 변화 등 다양한 조건을 변화 시켜 샘플을 성장시켰다. 그 결과 기판 온도가 600도이며 As4 flux가 $1\;{\times}\;10^{-6}\;Torr$ 조건하에서 성장한 InAlAs/AlGaAs 양자점이 양질의 808 nm의 파장 대역을 얻을 수 있었다.