• Title/Summary/Keyword: 대칭채널

Search Result 102, Processing Time 0.026 seconds

Polar Quantum Channel Coding for Symmetric Capacity Achieving (대칭용량 달성을 위한 극 퀀텀 채널 코딩)

  • Yang, Jae Seung;Park, Ju Yong;Lee, Moon Ho
    • Journal of the Institute of Electronics and Information Engineers
    • /
    • v.50 no.8
    • /
    • pp.3-14
    • /
    • 2013
  • We demonstrate a fashion of quantum channel combining and splitting, called polar quantum channel coding, to generate a quantum bit (qubit) sequence that achieves the symmetric capacity for any given binary input discrete quantum channels. The present capacity is achievable subject to input of arbitrary qubits with equal probability. The polarizing quantum channels can be well-conditioned for quantum error-correction coding, which transmits partially quantum data through some channels at rate one with the symmetric capacity near one but at rate zero through others.

Analysis of Threshold Voltage for Symmetric and Asymmetric Oxide Structure of Double Gate MOSFET (이중게이트 MOSFET의 대칭 및 비대칭 산화막 구조에 대한 문턱전압 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.18 no.12
    • /
    • pp.2939-2945
    • /
    • 2014
  • This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

A Study of the Threshold Voltage of a Symmetric Double Gate Type MOSFET (대칭형 이중 게이트 MOSFET에 대한 문턱전압 연구)

  • Lee, Jeong-Ihll;Shin, Jin-Seob
    • The Journal of the Institute of Internet, Broadcasting and Communication
    • /
    • v.10 no.6
    • /
    • pp.243-249
    • /
    • 2010
  • In this thesis, in order to a equivalent circuit-analytical study for a symmetric double gate type MOSFET, we slove analytically the 2D Poisson's equation in a a silicon body. To solve the threshold voltage in a symmetric double gate type MOSFET from the derived expression for the surface potential which the two-dimensional potential distribution of a symmetric double gate type MOSFET is assumed approximately. This thesis can use short and long channel in a silicon body we introduce a new the threshold voltage model in a symmetric double gate type MOSFET and measure it the distance about the range of channel length up to 0.1 [${\mu}m$].

Analysis of Threshold Voltage for Double Gate MOSFET of Symmetric and Asymmetric Oxide Structure (대칭 및 비대칭 산화막 구조의 이중게이트 MOSFET에 대한 문턱전압 분석)

  • Jung, Hakkee;Kwon, Ohshin;Jeong, Dongsoo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2014.05a
    • /
    • pp.755-758
    • /
    • 2014
  • This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend very differs with bottom gate voltage, channel length and thickness, and doping concentration.

  • PDF

A Study on Hybird Authentication Algorithm for Security Channel Retention (안전한 통신채널 확보를 위한 혼합형 인증알고리즘에 관한 연구)

  • Lee Seon-Keun;Kim Hwan-Yong
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.43 no.2 s.344
    • /
    • pp.22-26
    • /
    • 2006
  • Symmetric cryptographic algorithm is incongruent in network environment by absence of authencation in spite of advantage of easy etc. on data processing and implementation of high speed. Therefore, proposed merging style authentication algorithm that use MAC and MDC so that symmetric cryptographic algorithm can achieve authentication. Proposed algorithm made security can wide of secure communication channel as to achieve authentication to cryptographic algerian itself not that act independently of symmetric cryptographic algorithm.

Optimum Inner and Outer Code Rates for Concatenated Codes in Gaussian Binary Symmetric Channels (가우시안 이진 대칭 채널에서 쇄상부호의 최적 내.외 부호율에 관한 연구)

  • Lee, Ye Hoon
    • Journal of Satellite, Information and Communications
    • /
    • v.9 no.2
    • /
    • pp.110-113
    • /
    • 2014
  • In this paper, we address a problem of finding the optimum inner and outer code rates for a concatenated code in Gaussian binary symmetric channels. Clearly, as the inner code rate decreases, the error detection capability of the inner code increases. However, decreasing the inner code rate implies a decrease in error-correction capability of the outer code when overall code rate is fixed. With this notion in mind, we examine the optimum distribution of redundancy on the outer and inner codes to achieve a maximum performance gain in the concatenated coding scheme. Our analysis shows that the maximum coding gain can be obtained when the inner code rate is maximized and the outer code rate is minimized under the constraint of total code rate is fixed.

Successive Cancellation Decoding of Polar Codes : Channel Synthesis and Decomposition (극 부호의 연속 제거 복호 : 채널의 합성과 분리)

  • Lee, Moon-Ho;Li, Jun;Park, Ju-Yong
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.48 no.4
    • /
    • pp.24-36
    • /
    • 2011
  • In this paper, we verify the channel synthesis and decomposition of polar codes using successive cancellation decoding algorithm over binary discrete memoryless symmetric channel by modifying Arikan's algebraic formular on encoding and decoding of polar codes. In addition, we found that information bits are sent by efficiently consisting of polar codes with their size $2^n$ through polarizing matrix ${G_2}^{{\otimes}n}$ over binary discrete memoryless symmetric channel W. Expecially, if $N{\geq}2$, the complexity of Arikan's encoding and decoding for polar codes is O($Nlog_2N$). Furthermore, we found that polar codes are one of the solution to the challenging problems for the multipoint communication.

Performance Analysis of ISDN D-Channel Access Protocol (ISDN D-채널 엑세스 프로토콜의 성능 분석)

  • 박성현;은종관
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.15 no.7
    • /
    • pp.602-617
    • /
    • 1990
  • In this paper, we analyze the performance of D-channel access protocol at the S-reference point for the ISDN user network interface recommended by CCITT. For the case of multipoint access to D-channel, a queueing model of D-channel access protocol is proposed. The delay is analyzed by decomposing it into waiting queue delay and contention delay. The contention delay is decomposed further into vain contention delay and pure contention delay so the analysis of the priority queueing system with symmetrical and asymmetrical arrival rates may be applied. The numerical results obtained are compared with the results of the single station queueing system served by the non-preemptive priority.

  • PDF

Numerical Analysis of Flow Characteristics in the Impeller Channel of a Double Suction Pump (양흡입 펌프 회전차 채널 내부 유동 특성 고찰)

  • 김세진;김윤제
    • Journal of Energy Engineering
    • /
    • v.9 no.2
    • /
    • pp.89-94
    • /
    • 2000
  • 양흡입 펌프 회전차 내부 유동특성을 수치적으로 고찰하였다. 수치계산은 설계점과 2개의 탈설계점에서 이루어졌으며, Patankar에 의해 제시된 SIMPLE 알고리즘을 이용하였다. 설계점에서는 양 회전차 채널 내부에서 대칭 형상을 갖는 이차유동 특성을 발견하였지만, 탈설계점에서는 비대칭 유동특성을 발견하였다. 수치해석 결과로는 유량감소에 따라 양흡입 펌프 회전차 채널내부의 이차유동 특성이 달라진다는 사실을 고찰하였다. 또한 양흡입 펌프 회전차 단면에는 모퉁이 와류가 존재함을 알 수 있었다.

  • PDF

TD-CDMA System Using Chase Combining over Wideband Channel (와이드밴드 채널에서 Chase Combining 기법을 적용한 TD-CDMA 시스템의 성능 분석)

  • Suk, Kyung Hyu;Kim, Sung-Hong
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.4 no.1
    • /
    • pp.60-65
    • /
    • 2009
  • 차세대 이동통신 시스템에서는 고속 패킷 서비스가 주요 기능으로 부각되고 있다. 이러한 고속 패킷 서비스의 경우 불 연속적인 데이터의 전송 및 비 대칭적 대이터 트래픽의 특성으로 인하여 TD-CDMA 시스템에 대한 연구가 활발히 진행되고 있다. 이에 본 논문에서는 터보 부호를 적용한 TD-CDMA에 대하여 고찰하였다. 시스템의 특성을 고려하여 전송 프레임의 구성 방식, 물리채널구조 및 채널 부호화 방식등에 대하여 고찰하였다. 또한 TD-CDMA 시스템에 HARQ 기법중 하나인 Chase Combining 기법을 적용하여 그 성능을 분석하였다.

  • PDF