• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.212-212
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• 2002

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.21-29
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• 1996

A piezoresistive silicon acceleration sensor with 8 beams, utilized by an unique silicon micromachining technique using porous silicon etching method which was fabricated on the selectively diffused (111)-oriented $n/n^{+}/n$ silicon subtrates. The width, length, and thickness of the beam was $100\;{\mu}m$, $500\;{\mu}m$, and $7\;{\mu}m$, respectively, and the diameter of the mass paddle (the region suspended by the eight beams) was 1.4 mm. The seismic mass on the mass paddle was formed about 2 mg so as to measure accelerations of the range of 50g for automotive applications. For the formation of the mass, the solder mass was loaded on the mass paddle by dispensing Pb/Sn/Ag solder paste. After the solder paste is deposited, Heat treatment was carried out on the 3-zone reflow equipment. The decay time of the output signal to impulse excitation of the fabricated sensor was observed for approximately 30 ms. The sensitivity measured through summing circuit was 2.9 mV/g and the nonlinearity of the sensor was less than 2% of the full scale output. The output deviation of each bridge was ${\pm}4%$. The cross-axis sensitivity was within 4% and the resonant frequency was found to be 2.15 KHz from the FEM simulation results.

• Journal of the Korean Electrochemical Society
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• v.2 no.3
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• pp.130-133
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• 1999

In this work, a capacitance-type alcohol gas sensor using porous silicon layer is developed to apply for breath alcohol measurement and its characteristics are estimated at room temperature. Current alcohol sensors using metal oxides such as tin-oxide are not only difficult to measure low alcohol concentration, but also should heat at $200\;to\;400^{\circ}C$ to improve the sensitivity. But the sensor using porous silicon layer has good sensitivity even at room temperature by very large effective surface area and suitable structure to fabricate integrated micro sensors. In the experiment, the capacitance was measured for the range of 0 to $0.5\%$ alcohol concentration with the interval of $0.05\%$, in which alcohol solution was kept at 25, 36, and $45^{\circ}C$ by a heater. As the result, good linearity was observed and the capacitance increased about 1.1, 2.6 and $4.6\%$ per the increment of $0.1\%$ alcohol concentration each temperature, respectively, at the frequency of 120 Hz.

• Journal of the Korean Electrochemical Society
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• v.4 no.1
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• pp.10-13
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• 2001

Effects of an anionic surfactant pentadecafluorooctanoic acid on the photoluminescence of porous silicon was investigated, which was prepared by photoelectrochemical etching at 4V of single crystalline n-type silicon (100) with the specific resistivity of $0.4\~0.8{\Omega}{\cdot}cm$. Photoluminescence shifted to shorter wavelength and its intensity decreased when the concentration of the surfactant increased. FT-IR and contact angle data supported the presence of the surfactant lying on the surface of porous silicon.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.243-246
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• 2001

At atmosphere photoluminescence(PL) of porous silicon(PSi) decreases and peak wave number of PL is shifted to blue region. When PS is used light detector, the ageing effects are negative phenomena. For controling ageing effects, this paper uses Polymers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.23-30
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• 2005

In this paper, OPPS(oxidized porous poly-silicon) field emitters were fabricated by using various emitter-electrode metal and these electron emission characteristics were investigated for different thermal annealing effects. The addressed OPPS field emitter with Pt/Ti emitter electrode annealed at $300^{\circ}C$-1hr showed the efficiency of $2.98\%$ at $V_{ps}$=12 V and one annealed at $350^{\circ}C$-1hr showed the highest efficiency of $3.37\%$at $V_{ps}$=16V. They are resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous poly-silicon and the decrease of electrical resistance of emitter metal. The brightness of the OPPS field emitter increases linearly in $V_{ps}$ and after oxidation process for $900^{\circ}C$-50min, the brightness of the OPPS field emitter with the as-deposited Pt/Ti emitter electrode was 3600 cd/$m^2$ at the $V_{ps}$=15 V, 6260 cd/$m^2$ at the $V_{ps}$=20 V. Thermal treatment improved the adhesion between the Ti buffer layer and the oxidized porous poly-silicon and also played an important role in the uniform distribution of electric field to the emitter electrode.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1788-1790
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• 2000

본 논문에서는 마이크로 바이오 센서에 응용하기 위한 기초 실험으로서 다공성 실리콘을 이용한 요소 센서의 특성을 고찰하였다. 센서의 감도나 내구성 측면에서 보면 전도성 고분자를 전기중합(electropolymerization)한 후 효소를 전착(electrodeposition)하여 고정화하는 것보다는 PSi 표면에 효소를 코팅한 후 그 위에 고분자를 전기 중합하는 것이 유리하였다. SEM 이미지와 EDX 스펙트럼 분석 결과로부터 urease와 polypyrrole(PPy)이 다공질 실리콘 표면에 코팅되었음을 알 수 있었으며, 요소 농도가 1mM$\sim$1M 영역(일반적인 혈중 요소 농도는 $20{\mu}M{\sim}30{\mu}M$)에서 감도는 $30{\mu}A/decade$ 였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.8-15
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• 2007

In this paper, we fabricated the field emitter display using oxidized porous polysilicon(OPPS). Their field emission characteristics and the brightness were investigated for each pixel. The OPPS emitter was operated to each pixel using passive matrix for application of large panel display. We set up the proper thickness and width of upper electrode. The fine structure of OPPS was analyzed and the field emission characteristics of each pixel were investigated. As a result of field emission characteristics of different upper electrode thickness and width, we confirmed that the most efficient thickness was 2nm/7nm and increased the emission efficiency over the width of 2.5 mm. Even if field emission characteristics of each pixel was a little different but we confirmed the same leakage current and emission current, emission efficiency at each pixel. The leakage current and emission current was decreased according to the time increases but all of each pixel were uniformly decreased. We confirmed that the brightness of each pixel was not different and the brightness of OPPS field emitter was 700 cd/m2 at the Vps=20 V. Accordingly, the patterned OPPS field emitter can be applied to high quality field emission display devices.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1085-1088
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.781-784
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• 1988

The formation and properties of porous silicon layer(PSL) formed by anodic reaction in hydrofluoric acid solution have been studied. Many micropores are formed randomly inside of PSL and the anodization is achieved uniformly-toward the thickness direction. Current density, resistivity and HF concentration in P-type PSL formation are found to play important roles in determining the formation and properties of PSL.