• Title/Summary/Keyword: 다공성 실리콘막

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Development of Porous Silicon Electro-osmotic Pumps for High Flow Rate Per Current Flow Delivery of Organic Solvents (단위전류당 고유량 유기용매 이송을 위한 다공성 실리콘막 전기침투 펌프의 개발)

  • Kwon, Kil-Sung;Kim, Dae-Joong
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.34 no.2
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    • pp.105-111
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    • 2010
  • Two types of electro-osmotic pumps were prepared: with anodized and DRIE porous silicon. The pump performance was characterized for both types in terms of flow rate and flow rate per current using organic solvents. Both types of electro-osmotic pumps showed a better performance compared to porous glass electro-osmotic pumps. The DRIE porous silicon electro-osmotic pump especially demonstrated an excellent flow rate and flow rate per current performance. The DRIE porous silicon electro-osmotic pump is expected to help in the development of electro-osmotic pumps and micropumps in general due to the recently widespread availability of DRIE processes.

Cost-down Antireflection Coating using Anodization for Multicrystalline Silicon Solar Cells (양극산화과정으로 형성된 저가 고효율 다결정 실리콘 태양전지 반사 방지막에 대한 연구)

  • Kwon, J.H.;Kim, D.S.;Lee, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.977-980
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    • 2004
  • 본 논문에서는 저가 고효율 태양전지를 제작하기 위하여 p형 다결정 실리콘 기판을 사용하여 수산화 칼륨(KOH)이 포함된 용액에 Saw damage 과정 후 불산이 함유된 용액에 전기화학적 양극산화 과정으로 실리콘 웨이퍼 표면에 요철을 형성하여 다공성 실리콘을 형성 하였다. 본 논문은 전기화학적 에칭방법으로 기존의 진공장비로 제작된 반사방지막의 반사율만큼 감소된 다공성 실리콘 반사방지막을 형성하였다. 전자빔 증착기(e-beam evaporator)로 단층으로 형성된 $TiO_2$의 반사방지막은 400-1000 nm의 파장 범위에서 4.1 %의 평균 반사율을 가졌으며, 양극산화과정으로 형성된 다공성 실리콘은 400-1000 nm의 파장의 범위에서 4.4 %의 평균 반사율을 가졌다. 본 연구는 태양전지의 반사방지막 형성을 기존의 제작 방법보다 간단하고 저렴한 방법으로 접근하여 태양전지의 변환효율을 상승하는데 목적을 두었다.

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Asymmetric Flows for Porous Silicon Electroosmotic Pumps (다공성 실리콘막을 포함한 전기침투 방식 펌프에서의 비대칭적 인 유동)

  • Kim, Dae-Joong;Santiago, Juan G.
    • 한국전산유체공학회:학술대회논문집
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    • 2008.03b
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    • pp.703-704
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    • 2008
  • We fabricated and tested porous silicon-based electroosmotic pumps. Compared to other pumping media, porous silicon is beneficial for obtaining comparable flow rates with much lowered electric potential, while maintaining enough mechanical properties. We fabricated porous silicon with two sided-reactive etching processes. We found higher flow rate per electric potential (consistent with previous studies) and we also found asymmetric flow rates for different pumping directions. We plan to utilize this asymmetry for AC pumping applications.

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Application of Ceramic Membrane (세라믹 분리막의 응용)

  • 김은옥
    • Membrane Journal
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    • v.3 no.1
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    • pp.12-21
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    • 1993
  • 세라믹 분리막은 알루미나($Al_2O_3$), 지르코니아($ZrO_2$), Carbon, 실리콘 카바이드, 스테인레스 등의 무기재료를 이용하여 제조된 분리막이다. 압출성형공정으로 제조된 지지체는 1700$^{\circ}C$ 이상의 소결공정을 거치므로 지지체 상단에 슬러리 코팅공정으로 형성된 얇은 막에게 안정된 분리기능을 수행할 수 있도록 커다란 물리적 강도를 제공한다. 따라서, 세라믹 분리막은 다공성 세라믹 구조를 갖는 특징적인 두 개 또는 세 개의 균일한 층으로 구성된 복합막이라 할 수 있다.

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C-V Characteristics of Oxidized Porous Silicon (다공성 실리콘 산화막의 C-V 특성)

  • Kim, Seok;Choi, Doo-Jin
    • Journal of the Korean Ceramic Society
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    • v.33 no.5
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    • pp.572-582
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    • 1996
  • The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{\circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{\circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{\circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect.

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Fabrication of Nanopatterned Oxide Layer on GaAs Substrate by using Block Copolymer and Reactive Ion Etching (블록 공중합체와 반응성 이온식각을 이용한 GaAs 기판상의 나노패터닝된 산화막 형성)

  • Kang, Gil-Bum;Kwon, Soon-Mook;Kim, Seoung-Il;Kim, Yong-Tae;Park, Jung-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.4
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    • pp.29-32
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    • 2009
  • Dense and periodic arrays of nano-sized holes were patterned in oxide thin film on GaAs substrate. To obtain the nano-size patterns, self-assembling diblock copolymer was used to produce thin film of uniformly distributed parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene (PS) matrix. The PMMA cylinders were removed with UV expose and acetic acid rinse to produce PS nanotemplate. By reactive ion etching, pattern of the PS template was transferred to under laid silicon oxide layer. Transferred patterns were reached to the GaAs substrate by controlling the dry etching time. We confirmed the achievement of etching through the removing oxide layer and observation of GaAs substrate surface. Optimized etching time was 90 to 100 sec. Pore sizes of the nanopattern in the silicon oxide layer were 20~22 nm.

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Investigation of the crystalline silicon solar cells with porous silicon layer (다공성 실리콘 막을 적용한 결정질 실리콘 태양전지 특성 연구)

  • Lee, Eun-Joo;Lee, Il-Hyung;Lee, Soo-Hong
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.295-298
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    • 2007
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

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Gas Permeation Properties of the Ceramics-Silicone Composite Membranes (세라믹-실리콘 복합막의 기체투과 특성)

  • Hwang, Seung-No;Yang, Jae-Gun;Jung, Il-Hyun
    • Applied Chemistry for Engineering
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    • v.8 no.3
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    • pp.374-381
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    • 1997
  • Ceramic membranes are prepared by using molding method of the glass materials, ceramic-silicone composite membranes are synthesized with immersing silicone compound of sodiumate, $S_3$-Al, S3and we investigated the properties of gas permeation. Ceramic membranes and ceramic-sodiumate membranes that has been prepared were identified as porous structure and ceramic-$S_3$-Al membranes and ceramic-$S_3$ membranes were showed with dense structure by immersion of silicone compounds. Gas permeation properties through the ceramic membranes and ceramic-sodiumate membranes decreased with increasing temperature and linearly increased with increasing pressure, ceramic-$S_3$-Al membranes and ceramic-$S_3$ membranes increased with increasing temperature and pressure effect was low. Permeation rate was found out high value with ceramic membranes and in order of ceramic-sodiumate membranes, ceramic-$S_3$-Al membranes and ceramic-$S_3$ membranes, but selectivity reversed in the order. Gas permeation mechanism through the ceramic membranes and ceramics-sodiumate composite membrane decreased with increasing temperature, suggesting an Knudsen diffusion mechanism, but ceramic-$S_3$-Al composite membranes and ceramic-$S_3$ composite membranes showed an activated diffusion by which gas permeation rates through the membranes increased with an increase in temperature.

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Evaluation of Gas Transport Parameters through Dense Polymeric Membranes by Continuous-Flow Technique (연속흐름방식에 의한 기체투과특성 측정 및 분석)

  • 염충균;이정민;홍영택;김성철
    • Membrane Journal
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    • v.9 no.3
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    • pp.141-150
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    • 1999
  • A novel permeation apparatus was developed which could make the on-line measurements of both flux transient and permeate composition in gas permeation. The measurement by using the per¬meation apparatus was based on the continuous-flow technique. The transient measurement allowed the simultaneous determinations of permeation characteristics, such as, permeability, diffusion and solubility coefficients, and activation energies only with one experiment. The apparatus performance was illustrated by conducting the permeation of pure gases through two glassy polyimides and a rubbery poly (dimethyl¬siloxane) membranes, respectively. A comparison of the permeation characteristics determined from the flux transients was made with the literature values for verifying the confidence and accuracy of the measurement. Also, the analysis of the permeation transients obtained was carried out for the close investigation of the permeation behaviors of gases through membrane.

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Fabrication of anodic aluminum oxide nanotemplate using sputtered aluminum thin film (스퍼터 증착된 알루미늄 박막을 이용한 양극산화 알루미늄 나노템플레이트 제조)

  • Lee, Jae-Hyeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.4
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    • pp.923-928
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    • 2010
  • Anodic aluminum oxide (AAO) nanotemplates for nano electronic device applications have been attracting increasing interest because of ease of fabrication, low cost process, and possible fabrication in large area. The size and density of the nanostructured materials can be controlled by changing the pore diameter and the pole density of AAO nanotemplate. In this paper, nano porous alumina films AAO nanotemplate was fabricated by second anodization method using sputterd Al films. In addition, effects of electrolyte temperature and anodization voltate on the microstructure of porous alumina films were investigated. As the electrolyte temperature was increased from $8^{\circ}C$ to $20^{\circ}C$, the growth rate of nanoporous alumina films was increased from 86.2 nm/min to 179.5 nm/min. The AAO nanotemplate fabricated with optimal condition had the mean pore diameter of 70 nm and the pore depth of $1\;{\mu}m$.