• Title/Summary/Keyword: 다결정 실리콘 박막트랜지스터

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An Excimer Laser Annealed Poly-Si Thin Film Transistor Designed for Reduction of Grainboundary Effect (채널에 단일 그레인 경계를 갖는 다결정 실리콘박막 트랜지스터)

  • 전재홍
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.12
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    • pp.559-561
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    • 2003

  • We report a new excimer laser annealing method which successfully results in a single grain boundary formation in the channel of polycrystalline silicon thin film transistor. The proposed method is based on lateral grain growth and employs aluminum patterns which act as selective beam mask and lateral heat sink. The maximum grain size obtained by the proposed method is about 1.6${\mu}{\textrm}{m}$ in the length. The grainboundaries should be arranged parallel with the direction of current flow for the best device performance, so we propose a new device fabrication method and a new poly-Si TFT structure. Poly-Si TFT fabricated by the proposed method exhibits considerably improved electrical characteristics, such as high field effect mobility exceeding 240 $cm^2$/Vsec.

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