• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1791-1793
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• 2000

본 연구에서는 다결정 실리콘 박막 트랜지스터(poly-Si TFTs)에서의 소오스 및 드레인 영역 형성을 위해 PSG (phosphosilicate glass)와 BSG (borosilicate glass) 박막을 도핑 물질(dopant)로 하여 저온에서 엑시머 레이저(eximer laser)로 활성화하는 공정을 제안한다. 이 실험을 통해 소스 가스인 $PH_3$와 $SiH_4$의 유량비, 레이저 에너지 밀도와 레이저 조사 횟수를 변화시키면서 면저항(sheet resistance)과 불순물의 확산 깊이(diffusion depth)를 성공적으로 조절하였다. 불순물의 확산 깊이와 표면 농도는 레이저 에너지 밀도와 조사 횟수를 증가시킴에 따라 증가하였으며 그 결과 최소 면저항 값은 인(P)의 경우 450$\Omega/\square$을 얻었고 붕소(B)의 경우 1100$\Omega/\square$을 얻었다. 이러한 실험결과는 제안된 방법을 통해 poly-Si TFTs 에서 소오스, 드레인 영역의 도핑 공정을 수행할 수 있음을 보여준다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.99-103
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• 2008

To improve efficiency of solar cells, it is important to make a light trapping structure to reduce surface reflectance for increasing absorption of sun light within the solar cells. One of the promising methods that can reduce surface reflectance is isotropic texturing with acid solution based on hydrofluoric acid(HF), nitric acid($HNO_3$), and organic additives. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its different grain orientation. Isotropic texturing with acid solution can uniformly etch multicrystalline silicon wafers unrelated with grain orientation, so we can get low surface reflectance. In this paper, the acid texturing solution is made up of only HF and $HNO_3$ for easy controlling the concentration and low cost compared to acid solution with organic additives. $HNO_3$ concentration and dipping time were varied to find the condition of minimum surface reflectance. Textured surfaces were observed Scanning Electron Microscope(SEM) and surface reflectance were measured. The best result of arithmetic mean(wavelength from 400 nm to 1000 nm) reflectance with acid texturing is 4.64 % less than alkali texturing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.20-28
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• 2003

In this paper, we present results of the comparative analysis of the flicker phenomena in the poly-Si TFT-LCD and a-Si:H TFT-LCD arrays for the development and manufacturing of wide-area and high-quality TFT-LCD displays. We used four different types of TFTs; a-Si:H TFT, excimer laser annealed (ELA) poly-Si TFT, silicide mediated crystallization (SMC) poly-Si TFT, and counter-doped lateral body terminal (LBT), poly-Si TFT. We defined the electrical quantity of the flicker so that we could compare the flickers quantitatively for four different 40" UXGA TFT-LCDs. We identify three factors contributing to the flicker, such as charging time, kickback voltage and leakage current, and analyze how much each of three factors give rise to the flincker in the different TFT-LCD arrays. In addition, we suggest and show that, in the case of the poly-Si TFT-LCD arrays, the low-level (minimum) gate voltages should be carefully chosen to minimize the flicker because of their larger leakage currents compared with a-Si TFT-LCD arrays.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.4.2-4.2
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• 2009

산화아연 (ZnO)으로 대표되는 산화물반도체는 최근 다양한 비정질 산화물반도체들이 개발되고 있고 높은 이동도와 저온공정 등의 장점으로, 실리콘 기반 박막소자 (비정질-Si, 또는 다결정-Si(LTPS) 트랜지스터)를 대체할 차세대 박막 트랜지스터 (Thin-Film Transistor)의 핵심소재로 관심을 모으고 있다. 또한, 산화물 반도체는 근본적으로 투명하므로, 투명 전극 및 투명 기판재료와 함께 투명 디스플레이도 구현시킬 수 있을 것이다. 그렇지만, 핵심 전자소재로서 향후 디스플레이 및 디바이스에 성공적으로 적용되기 위해서는 소자의 특성 뿐만아니라, 전기적 신뢰성(reliability)을 강화시킬 필요가 있다. 본 발표에서는 In-Ga-Zn-oxide (IGZO), Zn-Sn-oxide (ZTO), Zn-In-Sn-oxide (ZITO) 및 도핑원소를 첨가한 소재에 이르기까지 다양한 산화물 반도체 소재 기술과 소자의 신뢰성 향상을 위한 기술 등을 소개할 것이다.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1289-1291
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• 1993

The hydrogenation effects on characteristics of polycrystalline silicon thin film transistors(poly-Si TFT's) of which the channel length varies from $2.5{\mu}m\;to\;20{\mu}m$ and poly-Si layer thickness is 50, 100, and 150 nm was investigated. After 1 hr hydrogenation annealing by PECVD, the threshold voltage shift decreased dependent on the channel length, but channel width may not alter the threshold voltage shift. In addition to channel length, the active poly-Si layer thickness may be an important parameter on hydrogenation effects, while gate poly-Si thickness may do not influence on the characteristics of TFT's. Considering our experimental results, we propose that channel length and active poly-Si layer thickness may be a key parameters of hydrogenation of poly-Si TFT's.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1042-1046
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• 2007

In this study, we investigated the mechanism responsible for the thermal stability of CoSi by addition of a foreign chemical element. Addition of W was found to increase the heat of formation of CoSi. This increase was claimed to inhibit the glass formation, which is preferred by silicide formation kinetics depicted by the maximum system energy degradation rate. In this case, there forms at the interface between CoSi and Si wafer a crystalline structure, the effective diffusion coefficient of which is much less than the self-diffusion rate provided by the glass. It was stated that the phase transition requires a higher thermal energy as the consequence, thereby enhancing the thermal stability of CoSi.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.75-76
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• 2007

Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.396-396
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• 2007

Highly ordered pore structures as a template for formation of seeds have been prepared by the self-organization process of aluminum oxidation. The a-Si films were deposited on the anodic alumina films and crystallized by laser irradiation. It was found that un-melted part of fine poly-Si grain formed by explosive crystallization (EX) lead super lateral growth(SLG) and occluded with neighbor grains. The crystallized grains along the distribution of seeds were obtained. This results show a great potential for use in novel crystallization for decently uniform polycrystalline Si thin film transistors (poly-Si TFTs).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.16-17
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• 2007

To improve efficiency of solar cells, it is important to make a light trapping structure to reduce surface reflectance for increasing absorption of sun light within the solar cells. One of the promising methods that can reduce surface reflectance is isotropic texturing with acid solution based on hydrofluoric acid(HF), nitric acid($HNO_3$), and organic additives. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its different grain orientation. Isotropic texturing with acid solution can uniformly etch multicrystalline silicon wafers unrelated with grain orientation, so we can get low surface reflectance. In this paper, the acid texturing solution is made up of only HF and $HNO_3$ for easy controling the concentration and low cost compared to acid solution with organic additives. $HNO_3$ concentration and dipping time were varied to find the condition of minimum surface reflectance. Textured surfaces were observed Scanning Electron Microscope(SEM) and surface reflectance were measured. The best result of arithmetic mean(wavelength from 400nm to 1000nm) reflectance with acid texturing is 4.64% less than alkali texturing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.128-131
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• 2003

The number of grain is determined based on Poisson distribution in respectively different active channel and it is converted to grain size which affects to the mobility and threshold voltage. the acquired data is applied to the SPICE for observing the variation of I-V characteristic with several channel lengths. we can confirm the effect on device.