Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
- /
- Pages.396-396
- /
- 2007
Novel Method of Poly-silicon Crystallization using Ordered Porous Anodic Alumina
정렬된 다공질 산화알루미늄을 이용한 새로운 다결정 실리콘 결정화 방법
- Kim, Jong-Yeon (Yonsei Univ.) ;
- Kim, Mi-Jung (Yonsei Univ.) ;
- Kim, Byoung-Yong (Yonsei Univ.) ;
- Oh, Byeong-Yun (Yonsei Univ.) ;
- Han, Jin-Woo (Yonsei Univ.) ;
-
Han, Jeong-Min
(Yonsei Univ.)
;
-
Seo, Dae-Shik
(Yonsei Univ.)
- Published : 2007.11.01
Abstract
Highly ordered pore structures as a template for formation of seeds have been prepared by the self-organization process of aluminum oxidation. The a-Si films were deposited on the anodic alumina films and crystallized by laser irradiation. It was found that un-melted part of fine poly-Si grain formed by explosive crystallization (EX) lead super lateral growth(SLG) and occluded with neighbor grains. The crystallized grains along the distribution of seeds were obtained. This results show a great potential for use in novel crystallization for decently uniform polycrystalline Si thin film transistors (poly-Si TFTs).