• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1345-1346
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• 2006

본 논문에서는 솔레노이드 형태의 칩 인덕터와 나선형태의 박막 인덕터에 대하여 주파수 특성을 비교 분석하여 장 단점을 정의하고자 한다. 솔레노이드형 RF 칩 인덕터는 $1.0mm{\times}0.5mm{\times}0.5mm$의 크기에 11nH의 인덕턴스를 가질 수 있도록 6회 권선하였다. 나선형 박막 인덕터는 $213{\mu}m{\times}250{\mu}m{\times}304{\mu}m$의 크기에 11nH의 인덕턴스를 가질 수 있도록 7회 권선하였다. 시뮬레이션을 위하여 AnSoft사의 HFSS를 이용하였으며, 이 결과 솔레노이드형 RF 칩 인덕터는 2GHz에서 77 정도의 품질계수와 5.6GHz의 SRF를 가진다. 반면 나선형 박막 인덕터는 2GHz에서 14 정도의 품질계수와 4.5GHz의 SRF를 가진다. 성능면에서는 솔레노이드형 RF 칩 인덕터가 우수한 특성을 나타내었으나 크기를 감소시키는데 제한을 받으므로, 향후 소형 경량화를 위하여 박막 인덕터의 개발은 필수적이며, 성능을 더욱 향상시키기 위하여 나선형태와 재료의 개발이 필수적이라 하겠다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.17-24
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• 2000

An area efficient and symmetric dual-level spiral inductor structure is proposed and evaluated in comparison with the conventional single-level spiral inductors. Contrary to the dual-level inductor mutual coupling coefficient of the upper-and lower-level inductors of the dual-level inductor increases with the increases in the number of turns. Because of this, for the same silicon area, the inductances of the dual-level incuctors are 2.5-4 times higher than that of the single-level inductor. Furthermore, the dual-level showed better quality factor that the single-level inductors for the same inductance. It is the intention of this paper to demonstrate that the dual-level can be more useful for the RF integrated circuits than the conventional single-level spiral inductors form the aspects of area efficiency and quality factor. The proposed dual-level inductors are designed and confirmed to be perfectly symmetric, and can also be used as a high-frequency choke.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.5
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• pp.315-320
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• 2022

In the case of a general spiral inductor, the orientation of the port is affected as it has an asymmetric structure. In this paper, double-layer spiral inductor that can have a symmetrical structure is proposed, and the simulation and frequency characteristics are analyzed. Compared to the conventional single-layer symmetrical inductor having an inductance of 3.9~4.2nH, the proposed double-layer symmetric spiral inductor has an inductance of 11~12nH in 0.3~1.2GHz frequency range, a quality factor of about 4.4 in 800MHz, and a self-resonant frequency of about 2.7~2.8GHz without changing the port. Compared to the general spiral inductor having a large difference depending on the port, it was confirmed that the influence on the port direction was small.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.5
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• pp.402-408
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• 2017

In this paper, we analyzed the frequency characteristics of hexagonal spiral thin-film inductor based on non-contact AC coupling for wireless signal transmission. We compared and analyzed the frequency characteristics of the rectangular spiral inductor and the hexagonal spiral inductor according to the number of turns, the line width and the line spacing of the conductor. Hexagonal spiral inductor has more number of turns to has the same inductance as rectangular spiral inductor, but the overall length of the conductors is shortened. This reduces the self inductance and increases the mutual inductance so that the overall inductance can have the same value. Also, since the overall length of the conductor is shortened and the magnetic resistance is reduced, the quality factor and the self-resonant frequency performance can be secured. The proposed hexagonal spiral thin-film inductor has the inductance of 3.54nH at 2GHz, the quality factor of max 14.00 at 5.0GHz and the self-resonant frequency at about 11.3GHz.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.9
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• pp.4101-4106
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• 2011

In this study, we propose that the structures of 2-layer spiral planar inductors have a lower spiral coil and via increasing inductance in limited possession are and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The 2-layer spiral planar inductors have inductance of 3.2nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 8.2 at 2.5 GHz, SRF of 5.8 GHz. Otherwise, 1-layer spiral planar inductors have inductance of 1.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18 at 8 GHz, SRF of 19.2 GHz.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.5
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• pp.353-358
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• 2020

In the case of a general spiral inductor, the orientation of the port is affected as it has an asymmetric structure. In this paper, a single-layered spiral inductor that can have a symmetrical structure is proposed, and the simulation and frequency characteristics are analyzed. The general spiral inductor shows a large difference in frequency-inductance characteristics, frequency-quality factor characteristics, and self-resonant frequency according to the standard of the port, while the proposed symmetric spiral inductor has an inductance of 2.7nH, a quality factor of about 7.86, and a self-resonant frequency of about 14.1GHz without changing the port. Compared to the general spiral inductor having a large difference depending on the port, it was confirmed that the influence on the port direction was small. However, it was confirmed that the mutual inductance decreased compared to the occupied area of the coil, resulting in a low inductance, and the resistance of the coil increased more than the increase in the inductance, and the quality factor was also lowered. In the future, it is expected that inductance and quality factor can be improved through a 2-layer symmetrical spiral structure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.3
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• pp.1284-1287
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• 2012

In this study, we propose the structures of octagonal spiral planar inductors without underpass and via, and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The octagonal spiral planar inductors have inductance of 2.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 5 GHz, SRF of 11.1 GHz. Otherwise, square spiral planar inductors have inductance of 2.8nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 4.9 GHz, SRF of 10.3 GHz.

• Journal of Korea Multimedia Society
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• v.6 no.2
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• pp.325-331
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• 2003

In this paper, we designed a spiral inductor and voltage controlled oscillator with the negative resistor for the bluetooth receiver by using 0.25$\mu\textrm{m}$ 1-poly 5-metal CMOS n-well process. The proposed inductor, which applies multi layer metal structure, is a structure that decreases resistance value by increasing he metal thickness. As the resistance value decreases, the quality factor Q has improved. Also, voltage-controlled oscillator is designed applying 1 port negative resistance, and changes its oscillating frequency by varying outside capacitor values. The simulation results show that oscillating frequency is 2.33~2.58GHz changing from 2pF to 14pF, and the oscillator has oscillating power over 0dBm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.11-16
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• 2000

The SPICE model of the spiral inductor on silicon substrate which can be easily used for the RF IC design has been developed. In this proposed model the equivalent circuit element of the spiral inductor are defined by the layout and process parameters using the user-defined function and subcircuit of the SPICE. The total inductance is calculated using the subcircuit Li for the arbitrary turn i and the subcircuit Mij for two arbitrary turns. The model was verified by comparing the simulated data with the measured s-parameters, total inductance, and quality factor of the spiral inductor fabricated by the CMOS 0.8${\mu}m$ process. The proposed SPICE model of the spiral inductor is scalable and includes the effects of the silicon substrate.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1347-1348
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• 2006

기존 반도체공정들이 갖는 리소그래피와 식각 등의 공정단계를 배제하는 direct-write 공정을 이용하여 친환경적인 이점을 가질 수 있는 나선형 인덕터의 구조를 제안하고 주파수 특성을 확인하였다. 인덕터의 구조는 Si를 $300{\mu}m$, $SiO_2$를 $3{\mu}m$으로 하였으며, CU 코일의 폭과 선간의 간격은 LAM 공정과 direct-write 공정을 이용할 수 있도록 각각 $100{\mu}m$으로 설정하여 3회 권선하였다. 인덕터는 200-500MHz 범위에서 3.5nH의 인덕턴스, 4GHz에서 최대 29 정도의 품질계수를 가지며, SRF는 2.6GHz로 시뮬레이션 결과를 얻을 수 있었다.