Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design, Analysis, and Comparison of Symmetric Dual-level Spiral Inductors for RF Integrated Circuits

RF집적회로용 이중층 나선형 대칭구조 인덕터의 설계 및 비교 분석

  • Published : 2000.10.01
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Abstract

An area efficient and symmetric dual-level spiral inductor structure is proposed and evaluated in comparison with the conventional single-level spiral inductors. Contrary to the dual-level inductor mutual coupling coefficient of the upper-and lower-level inductors of the dual-level inductor increases with the increases in the number of turns. Because of this, for the same silicon area, the inductances of the dual-level incuctors are 2.5-4 times higher than that of the single-level inductor. Furthermore, the dual-level showed better quality factor that the single-level inductors for the same inductance. It is the intention of this paper to demonstrate that the dual-level can be more useful for the RF integrated circuits than the conventional single-level spiral inductors form the aspects of area efficiency and quality factor. The proposed dual-level inductors are designed and confirmed to be perfectly symmetric, and can also be used as a high-frequency choke.

면적 효율이 높은 대칭 구조를 갖는 이중층 나선형 인덕터를 제시하였으며 그 특성을 일반적인 단일층 나선형 인덕터와 비교하여 분석하였다. 일반적인 예측과 달리 이중층 인덕터의 상하층 유도 계수가 인덕터의 권선수와 함께 증가하는 것을 확인하였고 이로 인하여 동일한 면적에 대하여 이중층 인덕터은 권선수에 따라 단일층에 비해 2.5-4배 정도 높은 인덕턴스값을 나타내었다. 또한 같은 인덕턴스 값에 대하여 이중층 구조로 단일층 구조 보다 높은 충실도를 가짐을 확인하였다. 본 논문에서는 이중층 나선형 인덕터가 단일층 나선형 인덕터보다 면적 효율과 충실도 측면에서 우수하여 RF집적회로에 활용되기에 적절한 보다 구조임을 제시하고자 한다. 제시된 이중층 나선형 인덕터는 완벽한 대칭 구조를 갖도록 설계되었으며 측정 결과에서 이와 같은 특성을 확인할 수 있었으며, 고주파용 초크로서 활용가능성을 확인하였다.

Keywords

References

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