• Korean Journal of Materials Research
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• v.18 no.7
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• pp.379-383
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• 2008

We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.453-461
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• 2013

Controlling the stick and slip motions of the contact lines in a confined geometry comprised of a spherical lens with a flat substrate is useful for manufacturing polymer ring patterns. We used a sphere on a flat geometry, by which we could control the interfaces of the solution, vapor and substrate. By this method, hundreds of concentric ring-pattern formations of a linear conjugated polymer, poly [2-methoxy-5-(2-thylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), were generated with excellent regularity over large areas after complete solvent evaporation. Subsequently, the MEH-PPV ring patterns played a role as a directed template to organize highly regular concentric rings of single-walled carbon nanotubes(SWCNTs); when a droplet of the SWCNT suspension in water was casted onto the prepared substrate, hydrophobic polymer patterns confined the water dispersed SWCNTs in between the hydrophilicized $SiO_2/Si$ substrate. As the solvent evaporated, SWCNT-rings were formed in between MEH-PPV rings with controlled density. Finally, we used a lift-off process to produce SWCNT patterns by the removal of a sacrificial polymer template with organic solvent. We also fabricated a field effect transistor using self-assembled SWCNT networks on a $SiO_2/Si$ substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.164-168
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• 2011

Etch selectivities of mask materials to ZnO and $SnO_2$ films were studied in $BCl_3$/Ar and $CF_4$/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In $25BCl_3$/10Ar ICP discharges, selectivities of 5.1~6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7 ~ 17 for ZnO over Ni were produced in $25CF_4$/10Ar mixtures. $SnO_2$ showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for $SnO_2$ over Ni.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.333-337
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• 2003

We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{－1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.342-349
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• 2009

This study investigated the growth characteristics of carbon nanotubes (CNTs) by changing a period of annealing time and a $C_{2}H_{2}/H_2$ flow ratio at temperature as low as $450^{\circ}C$ with inductively coupled plasma chemical vapor deposition. The 1-nm-thick Fe-Ni-Co alloy thin film served as a catalyst layer for the growth of CNTs, which was thermally evaporated on the 15-nm-thick Al underlayer deposited on the 50-nm-thick Ti diffusion barrier. The annealing at low temperature of $450^{\circ}C$ brought about almost no granulation of the catalyst layer, and the CNT growth was not affected by a period of annealing time. A study of changing the flow rate of $C_{2}H_{2}$ and $H_2$ showed that as the ratio of the $C_{2}H_{2}$ flow rate to the $H_2$ flow rate was lowered, the CNTs were grown to be longer With further decreasing the flow ratio, the length of CNTs reached the maximum and then became shorter. Under the optimized gas flow rates, we successfully synthesized CNTs with a uniform length over a 4-inch Si wafer at $450^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.395-395
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• 2008

Water-assisted synthesis of carbon nanotubes (CNTs) has been intensively studied in recent years, reporting that water vapor enhances the activity and lifetime of metal catalyst for the CNT growth. While most of these studies has been focused on the supergrowth of CNTs at high temperature, rarely has the similar approach been made for the CNT synthesis at low temperature. Since the metal catalyst are much less active at lower temperature, we expect that the addition of water vapor may increase the activity of catalyst more largely at lower temperature. We synthesized multi-walled CNTs at temperature as low as $360^{\circ}C$ by introducing water vapor during growth. The water addition caused CNTs to grow ~3 times faster. Moreover, the water-assisted growth prolonged the termination of CNT growth, implying the enhancement of catalyst lifetime. In general, a thinner catalyst layer is likely to produce smaller-diameter, longer CNTs. In a similar manner, the water vapor had a greater effect on the growth of CNTs for a smaller thickness of catalyst in this study. To figure out the role of process gases, CNTs were grown in the first stage and then exposed to each of process gases in the second stage. It was shown that water vapor and hydrogen did not etch CNTs while acetylene led to the additional growth of CNTs even faster in the second stage. As-grown CNTs were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and Raman spectroscopy.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.2
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• pp.111-117
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• 2016

The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of-plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.451-455
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• 2012

To compare an electrical and optical characteristics of indium tin oxide (ITO) and carbon nanotube (CNT) electrode on flexible and reflective display, we fabricate two charged particle-type display panels under the same panel condition of which the width of ribs is 10 ${\mu}m$, the cell size is $300{\mu}m{\times}300{\mu}m$, the q/m value of the white particles is -4.3 ${\mu}C/g$ and that for the black is +1.3 ${\mu}C/g$, and the cell gap is 75 ${\mu}m$, 125 ${\mu}m$, and 175 ${\mu}m$. We use plastic substrates coated with ITO and CNT electrode. To evaluate optical property, we measure a response time of particles using a laser and a photodiode. Threshold and driving voltages of CNT electrode according to the sheet resistance of 300, 600, 1,000 (ohm/sq) are compared with ITO electrode of 10 (ohm/sq). A response time of the CNT panel is similar to that of ITO panel, but the threshold and driving voltages of CNT panel are higher than that of ITO panel, inducing a large bombardment of the particles and shortening the lifetime of the panel. High difference of a threshold and a driving voltage of CNT panel will induce an particle clumping, resulting degradation of the panel. A bending radius of the fabricated CNT panel is 18 ${\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.401-409
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• 2013

Numerical analysis on RF (Radio-Frequency) thermal plasma treatment of micro-sized Ni metal was carried out to understand the synthesis mechanism of nano-sized Ni powder by RF thermal plasma. For this purpose, the behaviors of Ni metal particles injected into RF plasma torch were investigated according to their diameters ($1{\sim}100{\mu}m$), RF input power (6 ~ 12 kW) and the flow rates of carrier gases (2 and 5 slpm). From the numerical results, it is predicted firstly that the velocities of carrier gases need to be minimized because the strong injection of carrier gas can cool down the central column of RF thermal plasma significantly, which is used as a main path for RF thermal plasma treatment of micro-sized Ni metal. In addition, the residence time of the injected particles in the high temperature region of RF thermal plasma is found to be also reduced in proportion to the flow rate of the carrier gas In spite of these effects of carrier gas velocities, however, calculation results show that a Ni metal particle even with the diameter of $100{\mu}m$ can be completely evaporated at relatively low power level of 10 kW during its flight of RF thermal plasma torch (< 10 ms) due to the relatively low melting point and high thermal conductivity. Based on these observations, nano-sized Ni metal powders are expected to be produced efficiently by a simple treatment of micro-sized Ni metal using RF thermal plasmas.

• Composites Research
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• v.28 no.5
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• pp.260-264
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• 2015

In this paper, molecular dynamics (MD) simulation was carried to predict thermo-mechanical behaviors for carbon nanotube (CNT) reinforced epoxy composites and to analyze the trends. Total of six models having the volume fractions of CNT from 0 to 25% in epoxy were constructed. To predict thermal behaviors, temperature was increased constantly from 300 to 600 K, and the glass transition temperature ($T_g$) and coefficient of thermal expansion (CTE) analyzed using the relationship between temperature and specific volume. The elastic moduli that represented to the mechanical behaviors were also predicted by constant strain. Additionally, the effects of functionalization of CNT on mechanical behaviors of composite were analyzed. Models were constructed to represent CNTs functionalized by nitrogen doping and COOH groops, and interfacial behaviors and elastic moduli were analyzed. Results showed that the agglomerations of CNTs in epoxy cause by perturbations of thermo-mechanical behaviors, and the functionalization of CNTs improved the interfacial response as well as mechanical properties.