• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.440-443
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• 2010

We report a top-down approach based on atomic force microscopy (AFM) local anodic oxidation for the fabrication of the nano-pattern field effect transistors (FETs). AFM anodic oxidation is relatively a simple process in atmosphere at room temperature but it still can result in patterns with a high spatial resolution, and compatibility with conventional silicon CMOS process. In this work, we study nano-pattern FETs for various cross-bar distance value D, from ${\sim}0.5\;{\mu}m$ to $1\;{\mu}m$. We compare the optical characteristics of the patterned FETs and of the reference FETs based on both 2-dimensional simulation and experimental results for the wavelength from 100 nm to 900 nm. The simulated the drain current of the nano-patterned FETs shows significantly higher value incident the reference FETs from ${\sim}1.7\;{\times}\;10^{-6}A$ to ${\sim}2.3\;{\times}\;10^{-6}A$ in the infrared range. The fabricated surface texturing of photo-transistors may be applied for high-efficiency photovoltaic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.547-550
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• 2014

In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.594-598
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• 2008

The metal catalyst particles which there is as impurities on a tip part of carbon nanotube (CNT) are not good to apply it to a nano-electronic device. It was very important the opening of CNT-tip to fix a target bio material and a material to accept in CNT in a biosensor, so we performed $HNO_3$ wet etching to remove the metal catalyst particle which there was on a tip part of CNT grown up in the study and observed the opened CNT-tip with etching time. We synthesized the CNTs using a HF-PECVD method and choses the CNT length of 700 nm for the application of nano-electronic device such as a biosensor etc.. We observed the opened CNT-tip with wet etching times of $HNO_3$ (10, 30, 60 min). From the results, we observed that the CNT-tip was opened with the increase of wet etching time lively. In case of CNTs etched during 60 min, we confirmed that there was not the ratio of Ni included in CNTsI as catalyst. Conclusively, in the case of CNT etched for 60 minutes, it is completely good for application of a biosensor and, in addition, the metal-free CNTs will contribute to the application of other nanoelectronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.101-105
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• 2007

We have synthesized silicon nanowires by using RFCVD(Radio Frequency Chemical Vapor Deposition) system on Au deposited p-type Si(100) wafers, and investigated their physical and electrical properties. The silicon nanowires had been grown in the atmospheres of $H_{2},\;N_{2}\;and\;SiH_{4}$ at 10 Torr at the substrate temperatures of $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$ respectively. FE-SEM analysis revealed that diameters of the silicon nanowires are $50{\sim}60nm$ with the length of several ${\mu}m$. XRD analysis showed that the growth direction of the nanowires is Si[111]. Field emission characteristics showed that the turn-of voltages at the current of $0.01\;mA/cm^{2}$ are $10\;V/{\mu}m\;and\;8.5\;V/{\mu}m$ for the wires grown at $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.156-161
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• 2011

The present study introduces a novel wet etching technique for nanostructure fabrications which usually requires low surface roughness. Using the current method, acquired profiles were smooth even in the nanoscale, which cannot be easily achieved with conventional wet or dry etching methods. As one of the most popular single crystal silicon etchant, potassium hydroxide (KOH) solution was used as a base solvent and two additives, antimony trioxide (Sb2O3) and ethyl alcohol were employed in. Four experimental parameters, concentrations of KOH, Sb2O3, and ethyl alcohol and temperature were optimized at 60 wt.%, 0.003 wt.%, 10 v/v%, and $23^{\circ}C$, respectively. Effects of additives in KOH solution were investigated on the profiles in both (110) and (111) planes of single crystal silicon wafer. The preliminary results show that additives play a critical role to decrease etch rate significantly down to ~2 nm/min resulting in smooth side wall profiles on (111) plane and enhanced surface roughness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.626-631
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• 2012

$SnO_2$ nanoparticles were synthesized by flame spray pyrolysis, which were directly deposited on Pt interdigitated substrates. Gas sensing performance was evaluated for various gases such as $H_2$, CO, $H_2S$, and $NH_3$, and it was compared with that of commercial $SnO_2$ nanopowder. The synthesis of $SnO_2$ nanoparticles was also conducted in various solvents. As a result, the primary particle size was changed with the solvent of precursor solution, and their $H_2$ sensing properties were significantly affected.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.782-787
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• 2010

Recently the solution-based thin film technology has often been treated in the field of device fabrication owing to easy process and convenience for the development of various semiconductor devices and sensors. We deposited on glass substrate single-walled carbon nanotubes (SWNTs)/silane hybrid thin films by multiple spray-coating which is one of solution-based processes, and examined their electrical response for humidity. Generally silane binders which are often mixed in carbon nanotube (CNT) solution to adhere CNTs to substrate well form easily each own functionalized group on the surface of CNTs after they are hardened by way of the hydrolysis reaction. In this work, we investigated how silane binders (TEOS (tetraethoxy silane), MTMS (methyltrimethoxysilane) and VTMS (vinyltrimethoxysilane)) in CNT thin films make effect to their electrical response on humidity. As the result, we found that the resistance in the samples using TEOS was changed dramatically while it was almost invariant in the samples using MTMS and VTMS for increasing humidity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1089-1094
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• 2009

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as resistive gas sensors for ethanol ($C_2H_5OH$) detection. Sensor films were fabricated by air spray method for the multi-walled CNTs solution on glass substrates. Sensors were characterized by resistance measurements in the sensing system, in order to find the optimum detection properties for the ethanol gas molecular. The film that was sprayed with the MWCNT dispersion for 60 see, was 300 nm thick. And the electric resistivity is $2{\times}10^{-2}\;{\Omega\cdot}cm$. Also, the sensitivity and the linearity of MWVNT sensor for ethanol gas are 0.389 %/sec and 17.541 %/FS, respectively. The MWCNT film was excellent in the response for the ethanol gas molecules and its reaction speed was very fast, which could be using as ethanol gas sensor. The conductance of the fabricated sensors decreases when the sensors are exposed to ethanol gas.