• Journal of IKEEE
• /
• v.25 no.3
• /
• pp.467-472
• /
• 2021

Stable operation of semiconductor devices is needed even at high temperatures. Among the structures of semiconductor devices, the area that can cause unstable electrical responses at high temperatures is the contact layer between the metal and the semiconductor. In this study, the effect of annealing conditions included in the process of forming a contact layer of nickel silicide(NiSix) on a p-type SiC layer on the specific contact resistance of the contact layer and the total resistance between the metal and the semiconductor was investigated. To this end, a series of electrodes for TLM (transfer length method) measurements were patterned on the 4 inch p-type SiC layer under conditions of changing annealing temperature of 1700 and 1800 ℃ and annealing time of 30 and 60 minutes. As a result, it was confirmed that the annealing conditions affect the resistance of the contact layer and the electrical stability of the device.

• Applied Chemistry for Engineering
• /
• v.22 no.3
• /
• pp.249-254
• /
• 2011

A nonthermal plasma reactor in conjunction with a tubular type with a ferroelectric (high-dielectric ceramic) pellet layer was designed and constructed. $SrBiTaO_9$ (SBT) pellets with 2.0 mm in diameter were held within the tube arrangement by two metal mesh electrodes (20 mm separation) connected to a high-voltage AC power supply. The dielectric constant of SBT pellets was 150 at room temperature and 500 at curie temperature ($335^{\circ}C$). The generation rate of ozone in the plasma reactor almost linearly increased with increasing applied voltage. In the case of the plasma reactor packed with SBT pellets the generation rate of ozone sharply increased at the applied voltage more than 20 kV. The ozone generation rate at the negative corona discharge was higher than that of the positive corona discharge. However, the destruction efficiency of toluene and methylene chloride was not increased in proportion to ozone concentration.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.22 no.3
• /
• pp.88-93
• /
• 2021

SAW (Submerged Arc Welding) is often used for ship construction or welding pressure vessels and involves spraying a flux in a powder form to a welding site to a certain thickness and continuously supplying electrode wires therein. This welding method enables high current welding up to 1,500 to 3,000 A. Arc efficiency is higher than 95% and the technique allows clean work as it creates less welding fume, which is composed of fine metal oxide particles, and the arc beam is not exposed. In this study, SM490C-TMC thick plates were heterogeneously welded by SAW. Mechanical properties of welds were measured, and welds were assessed macroscopically and for adhering magnetic particles. The following conclusions were drawn. Bending tests showed no spots exploded on sample surfaces or any other defect, and plastic deformation testing confirmed sufficient weld toughness. These results showed the 1F welding method has no shortcomings in terms of bending performance.

• Current Photovoltaic Research
• /
• v.9 no.4
• /
• pp.128-132
• /
• 2021

Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiN_x deposition conditions can affect the metal contact of the TOPCon structure.

• The Journal of Korean Society for Radiation Therapy
• /
• v.27 no.2
• /
• pp.97-106
• /
• 2015

Purpose : This study evaluate the thermal changes caused by use of the chemoport for drug administration and blood sampling during radiofrequency hyperthermia. Materials and Methods : 20cm size of the electrode radio frequency hyperthermia (EHY-2000, Oncotherm KFT, Hungary) was used. The materials of the chemoport in our hospital from currently being used therapy are plastics, metal-containing epoxy and titanium that were made of the diameter 20 cm, height 20 cm insertion of the self-made cylindrical Agar phantom to measure the temperature. Thermoscope(TM-100, Oncotherm Kft, Hungary) and Sim4Life (Ver2.0, Zurich, Switzerland) was compared to the actual measured temperature. Each of the electrode measurement position is the central axis and the central axis side 1.5 cm, 0 cm(surface), 0.5 cm, 1.8 cm, 2.8 cm in depth was respectively measured. The measured temperature is $24.5{\sim}25.5^{\circ}C$, humidity is 30% ~ 32%. In five-minute intervals to measure the output power of 100W, 60 min. Results : In the electrode central axis 2.8 cm depth, the maximum temperature of the case with the unused of the chemoport, plastic, epoxy and titanium were respectively $39.51^{\circ}C$, $39.11^{\circ}C$, $38.81^{\circ}C$, $40.64^{\circ}C$, simulated experimental data were $42.20^{\circ}C$, $41.50^{\circ}C$, $40.70^{\circ}C$, $42.50^{\circ}C$. And in the central axis electrode side 1.5 cm depth 2.8 cm, mesured data were $39.37^{\circ}C$, $39.32^{\circ}C$, $39.20^{\circ}C$, $39.46^{\circ}C$, the simulated experimental data were $42.00^{\circ}C$, $41.80^{\circ}C$, $41.20^{\circ}C$, $42.30^{\circ}C$. Conclusion : The thermal variations were caused by radiofrequency electromagnetic field surrounding the chemoport showed lower than in the case of unused in non-conductive plastic material and epoxy material, the titanum chemoport that made of conductor materials showed a slight differences. This is due to the metal contents in the chemoport and the geometry of the chemoport. And because it uses a low radio frequency bandwidth of the used equipment. That is, although use of the chemoport in this study do not significantly affect the surrounding tissue. That is, because the thermal change is insignificant, it is suggested that the hazard of the chemoport used in this study doesn't need to be considered.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.4
• /
• pp.2343-2348
• /
• 2014

Main ground net of power plant is formed to protect human body from increase in potential gradient caused by grounding current during ground fault. Calculations during ground design are generally performed according to IEEE Std-80-2000 (Kepco Design Standard 2602). However, it is difficult to apply this Standard to water environment, and a grounding technology is required to secure grounding resistance of floating photovoltaic system. Therefore the aim of this paper is to investigate and analyze ground resistivity on the water surface and underwater of reservoir using Wenner 4-pin method, a general method of measuring ground resistivity. Also, grounding resistance of floating photovoltaic systems currently in operation was measured and analyzed using the voltage drop method suggested in the international standard (IEEE Std-81) to propose a grounding method for stable grounding of floating photovoltaic system. The resistivity at 1m below the surface of water ($126.3969[{\Omega}{\cdot}m]$) is mostly higher than resistivity at the river bed ($97.5713[{\Omega}{\cdot}m]$). Also the proposed grounding anchor method was determined as the most effective method of securing stable grounding resistance in floating photovoltaic systems and is expected to be utilized as a ground method for future floating photovoltaic generation systems.

• The Journal of the Acoustical Society of Korea
• /
• v.30 no.4
• /
• pp.215-222
• /
• 2011

In order to obtain high resolution images, a focusing ultrasonic transducer operated in very high frequency (VHF) range was fabricated and its characteristics were evaluated. A 9-${\mu}m$ thick PVDF film with only one metalized surface for electric ground was adhered to a CCP (Copper-clad polyimide) film by using epoxy. It was pressed by a metal ball to form a concave surface and its rear side was filled with the epoxy. The radius of curvature and the f-number of the fabricated transducer are 7.5 mm and 1.7, respectively. The pulse-echo measurement results from a target located at the focal point showed that the frequency bandwidth was 35.0 MHz and the insertion loss near the peak frequency of approximately 40 MHz was about 60 dB. Those values agreed well with the simulation results by the KLM equivalent circuit analysis including the effect of the epoxy bonding layer. When the image of thin copper lines by the 35 MHz transducer of the UBM (Ultrasonic Backscattering Microscope) system was compared with the image by the transducer fabricated in this study, the fabricated transducer was observed that the axial resolution was improved although the lateral resolution was degraded.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.131-131
• /
• 2016

기원전 5000년 이집트에서부터 시작된 도금은 시간이 지남에 따라 점점 발전하여, 1900년대에 들어 전기를 이용한 도금공정이 개발되었고, 현재 뿌리산업으로써 각종 제조업에 널리 이용되고 있다. 도금 공정은 금속을 부식으로부터 보호하고, 제품의 심미성과 기능성, 생산성 등을 높이기 위해 주로 이용된다. 전주도금 공정은 완벽하게 동일한 형태의 생산품을 다량으로 제작 할 수 있기 때문에, 그 높은 생산성으로 주목 받고 있다. 특히, 나노/마이크로 크기의 정밀 소자 등을 가공하는 차세대 기술인 LIGA공정과 접목이 가능하다는 장점이 있다. 몰드를 이용하여 복제하는 방식인 전주 도금은 도금공정이 끝난 후 몰드와 완성된 제품을 분리해내는 추가공정이 필연적으로 발생하게 되는데, 둘 사이의 접착력을 낮추기 위하여 몰드의 표면에 이형박리제를 도포하게 된다. 이형박리제로는 전기가 잘 흐르면서 접착력이 낮은 이산화 셀렌이나 중크롬산이 주로 이용되지만, 원활한 박리를 위해서는 그 두께가 30 um 이상 확보되어야 하기 때문에 정밀한 미세구조 전주도금이 어렵다는 문제점이 있다. 또한 이와 같은 화학 약품들은 매우 유독하기 때문에 추가적인 폐수 처리 공정이 필요하며, 작업자의 안전을 위협하고 심각한 환경 오염을 초래한다는 추가적인 문제가 발생한다. 따라서, 매우 얇고 친 환경적이며 안전한 전주도금 이형박리제에 대한 연구가 요구되고 있다. 본 연구에서는 전주도금 몰드로 사용한 구리의 표면에 TCVD를 이용하여 단일 층 그래핀을 성장시킨 후, 그래핀이 코팅된 몰드에 구리를 전주도금하여 박리하였다. 박리 후 그래핀은 몰드에 손상 없이 남아있는 것을 Raman microscopy를 통해서 확인하였고, 몰드와 그래핀 사이의 접착력 (약 $0.71J/m^2$)에 비해 그래핀과 전주도금 샘플간에 낮은 접착력 (약 $0.52J/m^2$)을 갖는 것을 확인하였다. 이와 같이 낮은 접착력을 통해 박리 시 표면구조의 손상 없이 정밀한 구조의 미세 패턴구조를 형성할 수 있었다. 전주도금을 이용한 전극 형성과 고분자와의 융합을 통해 유연기판을 제작하여 bending 실험을 진행하였다. $90^{\circ}$의 bending 각도로 10000회 이하에서는 저항의 변화가 없었고, LED chip을 mounting한 후 곡률반경 4.5 mm까지 bending을 진행하여도 이상 없이 LED가 발광하는 것을 확인하였다. 위와 같은 전주도금 공정을 이용하여 고집적 전자기기, 광학기기, 센서기기 등의 다양한 어플리케이션의 부품제조에 활용될 수 있을 것으로 기대한다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.5
• /
• pp.191-198
• /
• 2018

SnSb alloy powders with excess Sn or Sb are fabricated by the high energy ball-milling of pure Sn and Sb powders with different Sn/Sb molar ratios, and then their material properties and lithium electrochemical performances are investigated. It is revealed by X-ray diffraction that SnSb alloys are successfully synthesized, and the powder size is decreased via ball-milling. Charge-discharge test using a coin-cell shows that the best result, in terms of the cyclability and the capacity after 50 cycles, comes from the electrode composed of Sn : Sb = 4 : 6, i.e. the capacity of $580mAh\;g^{-1}$ after 50 cycles. When the electrode is composed of Sn : Sb = 3 : 7, however, the capacity is noticeably decreased by the restrained Sn reaction with Li-ion. The pure SnSb alloy powders (Sn : Sb = 5 : 5) results in the second best performance. In the case of Sn-rich SnSb alloys, the initial capacity is relatively high, but the capacity is quickly fading after 20 cycles.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.214.1-214.1
• /
• 2015

Thin-film transistors (TFTs)의 채널층으로 널리 쓰이는 indium-gallium-zinc oxide (IGZO)는 높은 전자 이동도(약 10 cm2/Vs)를 나타내며 유기 발광 다이오드디스플레이(OLED)와 대면적 액정 디스플레이(LCD)에 필수적으로 사용되고 있다. 하지만, 이러한 재료는 우수한 TFT의 채널층의 특성을 가지는 반면, ZnO 기반 재료이기 때문에 소자 구동에서의 안정성은 가장 큰 문제로 남아있다. 따라서 최근, IGZO layer의 특성을 향상시키기 위한 연구가 다양한 방법으로 시도되고 있다. IGZO의 조성비를 조절하여 전기적 특성을 최적화거나 IGZO layer의 조성 중 Ga을 다른 금속 메탈로 대체하는 연구도 이루어지고 있다. 그러나 IGZO에 미량의 도펀트를 첨가하여 박막 특성 변화를 관찰한 연구는 거의 진행되지 않고 있다. 산화물 TFTs의 전기적 특성과 안정성은 산소 함량에 영향을 많이 받는 것으로 알려져 있으며, 더욱이 TFT 채널층으로 쓰이는 IGZO 박막의 고유한 산소 공공은 디바이스 작동 중 열적으로 활성화 되어 이온화 상태가 될 때 소자의 안정성을 저하시키는 것이 문제점으로 지적되고 있다. 그러므로 본 연구에서는 낮은 전기 음성도(1.22)와 표준전극전위(-2.372 V)를 가지며 산소와의 높은 본드 엔탈피 값(719.6 kJ/mol)을 가짐으로써 산소 공공생성을 억제할 것으로 기대되는 yttrium을 IGZO의 도펀트로 도입하였다. 따라서 본 연구에서는 Y-IGZO의 박막 특성 변화를 관찰하고자 한다. 본 연구에서는 magnetron co-sputtering법으로 IGZO 타깃(DC)과 Y2O3 타깃(RF)를 이용하여 기판 가열 없이 동시 방전을 이용해 non-alkali glass 기판 위에 증착 하였다. IGZO 타깃은 DC power 110 W으로 고정하였으며 Y2O3 타깃에는 RF Power를 50 W에서 110 W까지 증가시키면서 Y 도핑량을 조절하였다. Working pressure는 고 순도 Ar을 20 sccm 주입하여 0.7 Pa로 고정하였다. 모든 실험은 $50{\times}50mm$ 기판 위에 총 두께 $50nm{\pm}2$ 박막을 증착 하였으며, 그 함량에 따른 전기적 특성 및 광학적 특성을 살펴보았다. 또한, IGZO 박막 제조 시 박막의 안정화를 위해 열처리과정은 필수적이다. 하지만 본 연구에서는 열처리를 진행하지 않고 Y-IGZO의 안정성 개선 여부를 보기 위하여 20일 동안 상온에서 방치하여 그 전기적 특성변화를 관찰하였다. 나아가 Y-IGZO 채널 층을 갖는 TFT 소자를 제조하여 소자 구동 특성을 관찰 하였다. Y2O3 타깃에 가해지는 RF Power가 70 W 일 때 Y-IGZO박막은 IGZO박막과 비교하여 상대적으로 캐리어 밀도는 낮은 반면 이동도는 높은 최적 특성을 얻을 수 있었다. 상온방치 결과 Y-IGZO박막은 IGZO박막에 비해 전기적 특성 변화 폭이 적었으며 이것은 Y 도펀트에 의한 안정성 개선의 결과로 예상된다. 투과도는 Y 도핑에 의하여 약 1.6 % 정도 상승하였으며 밴드 갭 내에서 결함 준위로 작용하는 산소공공의 억제로 인한 결과로 판단된다.