• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2266-2268
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• 2000

본 논문에서는 스캐닝 미러의 일종으로, 광저장 장치의 픽업헤드용으로 미세회전을 하면서 레이저 빔을 편향시키는 용도로 사용되는 미러를 제작하고 구동실험을 하였다. 제작된 미러의 크기는 $2400{\times}2400{\times}64{\mu}m^3$이고, 빔 스프링은 $500{\times}9.6{\times}64{\mu}m^3$이다. 니켈 전해 도금으로 29${\mu}m$ 높이의 구동 전극을 제작하였고(세가지 모델: 공기통로가 없는 전극, 공기통로와 간격이 각각 200${\mu}m$인 전극, 공기통로와 간격이 각각 100${\mu}m$인 전극), 미러판과 전극을 조립하여(미러판과 전극 사이의 간격은 각각 29${\mu}m$, 26${\mu}m$, 26${\mu}m$) 구동실험을 하였다. 공진 주파수의 계산간은 576Hz, 측정값은 3개의 미러에서 모두 568Hz이었다. 전극과 미러판의 간격이 최대 접근거리 18${\mu}m$가 되도록 미세 회전을 시켰을 때, 공기통로가 없는 전극에서는 공진 주파수가 524Hz, 공기통로가 200${\mu}m$인 전극에서는 544Hz로 각각 감쇠되었고, 공기통로가 100${\mu}m$인 전극에서는 그대로 568Hz이었다.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.229-231
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• 1996

We are studied the stability of amorphous and crystalline $Te_{100-x}Ge_x$ (x=10, 15. 25, 40, 50, 60 at.%) thin films by observing the degradation in 8O%RH/$66^{\circ}C$ environment and the reflectance ratio. The degradation was observed with the transmittance and reflectance, the reflectance was measured at 780nm in the wavelength range of diode laser. In amorphous $Te_{100-x}Ge_x$ thin films of below x=4O at.%, the degradation was observed, the thin film of x=10 at.% was shown the degradation degree of 12.5%. In crystalline $Te_{100-x}Ge_x$ thin films of x=10, 40 at.%, the degradation degree were 12.8%, 13%, respectively. The reflectance ratio were shown above 20% in. all composition ratio. Therefore, we are expected that $Te_{100-x}Ge_x$ thin films of x=50, 60 at.% has the long life for the optical recording media.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.5 s.170
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• pp.80-86
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• 2005

Optical performance evaluation results and an interference fringe pattern analysis of alignment errors for an optical head of a near-field receding (NFR) system are presented. The focusing unit is an optical head of a NFR system and is composed of a solid immersion lens (SIL) and an objective lens (OL). Generally, the size of the focusing unit is smaller than that of the conventional optical recording head. Hence there are difficulties to assemble the small focusing unit precisely. We composed an evaluation system with an interferometer and evaluated some focusing unit samples aligned and assembled by manual and present the obtained results. Using the conventional optical tool, Code V, a tolerance analysis of the alignment error between the SIL and the objective lens and an interference pattern analysis for the assembly error are executed. Then, through an analysis of the simulation results, the conceptual auto-alignment methodology using a neural network approach is considered.

• Transactions of the Society of Information Storage Systems
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• v.2 no.1
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• pp.13-20
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• 2006

In this paper, we propose novel optics design for media inside near-field recording(NFR) using hemispherical solid immersion lens(HMS). To obtain strong advantage of data protection and high data capacity simultaneously, HMS based near field optics using aplanatic position of super hemisphere is designed. In this design, to improve small optical tolerance of this aplanatic position, additional aspheric lens surface is added on top of the HMS and it is combined with zoom optics which composed of two single lenses having low numerical aperture(NA). Also, to compensate chromatic aberration which happens seriously in optics using blue laser diode, diffractive optical element is used. Using zoom optics, additional aspheric lens surface, and diffractive optical element together, wavefront aberration and chromatic aberration are effectively reduced in broad range of cover layer thickness and wavelength variation. In addition, in this paper, effect of gap induced aberration is investigated by analyzing different behavior of each TM and TE wave for designed media inside dual-layer NFR optics.

• Korean Journal of Materials Research
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• v.7 no.3
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• pp.213-217
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• 1997

AOhf(Hcousto-r)l)tic niodulator) with :!OOlIiz freclucncl- and Sfi(;(Seconrl harmonic generation) green lasel-Lvith 53% nm wavelength were used for Il\'IIII~Dii.it,ii v~ilco disk recorder) FOI rhe appli~aptin of high densit]. optical recording, a high po\ver I ~ c r is r c ~ ~ l i ~ i l - u l ic I !tic. s\-sti,m a n d optic.,~I io;iting l,t)c>rs of each optical device must have a high laser damage threshoid hie rn;itie ant] retlwtive coatings on a $TeO_{2}$ singlc crystal. which is used as an acoustooptic material, by E-beam evaporation method. Laser damage threshold \vas nicdsureci hy Ar laser with the input power oi 0.55LV 1,aser damage threiholti 01 $ZrO_{2}$ and $SiO_{2}$. filn-is were higher than $AI_{2}O_{3}$ f i l m U'e also investigated a long--tern1 stability of the output po\ver of St{(; green laser

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.23-32
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• 2003

The spectroe-ellipsometric constant $\Delta$, Ψ and the ellipsometric growth curves at the wavelength of 632.8 nm are collected. These are critically examined to find out the optimum growth condition of phase change $Ge_2Sb_2Te_5(GST)$ thin films as an optical recording medium. GST films are prepared using DC magnetron sputtering technique, under the selected experimental conditions of Ar gas pressure (5 mTorr, 7 mTorr and 10 mTorr), DC power of sputtering gun (15 W, 30 W and 45 W), and substrate temperature (from room temperature to 18$0^{\circ}C$). Based on the three film model, the density distribution of deposited GST films are obtained versus Ar gas pressure and DC power by analyzing spectro-ellipsometric data. The calculated evolution curves at the wavelength of 632.8 nm, are fit into the in situ observed ones to get information about the evolution of density distribution during film growth. The density distribution showed different evolution curves depending on deposition conditions. The GST films fabricated at DC power of 30 W or 45 W, and at Ar gas pressure of 7 mTorr turned out to be the most homogeneous one out of those prepared at room temperature, even though the maximum density difference between the dense region and the dilute region of the GST film was still significant (~50%). Finally, in order to find the optimum growth condition of homogeneous GST thin films, the substrate temperature is varied while Ar gas pressure is fixed at 7 mTorr and DC power at 30 W and 45 W respectively. A monotonic decrease of void fraction except for a slight increase at 18$0^{\circ}C$ is observed as the substrate temperature increases. Decrease of void fraction indicates an increase of film density and hence an improvement of film homogeneity. The optimum condition of the most homogeneous GST film growth turned out to be 7 mTorr of Ar gas pressure, 15$0^{\circ}C$ of substrate temperature. and 45 W of DC power. The microscopic images obtained using scanning electron microscope, of the samples prepared at the optimum growth condition, confirmed this conclusion. It is believed that the fabrication of homogeneous GST films will be quite beneficial to provide a reliable optical recording medium compatible with repeated write/erase cycles.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.158-160
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• 2001

본 연구는 레이저 처리기술에 의한 Li$_2$O-A1$_2$O$_3$-SiO$_2$계 유리의 미세가공과 레이저에 의한 유리의 광활성반응에 관한 것으로서, 1064nm와 355nm의 파장을 갖는 Nd:YAG laser를 유리에 조사하여 유리의 파괴특성 및 광학적변화를 관찰하였다. 1064nm 레이저에 의한 유리의 파괴 부분은 광학현미경과 주사전자현미경(SEM)으로서 파괴특성을 평가하였으며, 355nm 레이저에 의한 유리의 변화는 흡수대역을 측정함으로 그 광학적 특성을 나타내었다. 이와 같은 레이저에 의한 가공은 유리내부의 3차원적인 미세구조물 형성이나, internal waveguide, 또는 광 흡수대역의 변화에 따른 광기록방법으로 응용될 것으로 예상된다.

• Proceedings of the Korea Multimedia Society Conference
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• 2012.05a
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• pp.238-241
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• 2012

모든 기록매체의 장기보존성과 신뢰성은 보존에 있어 중요한 요소 중 하나이다. DVD 광기록매체 또한 신뢰성을 평가하기 위한 다양한 국제표준 및 연구가 진행되었다. 국가기록원은 각급 기관에서 생산되어 이관된 다양한 종류의 DVD 광매체를 보존하고 있으며, 이에 대한 상태평가를 위해 선행된 표준 및 연구 내용을 바탕으로 이관된 광매체에 대한 상태를 측정을 하였다. 본 연구에서는 이관된 DVD 매체에 대한 평가 기준을 8개의 연속된 ECC블럭의 PI 에러값을 사용하였다. 측정된 PI 에러 값은 생산년도, 제조회사, 에러 발생 위치로 분류하였으며 시간에 따른 열화 정도, 기록 품질 그리고 에러 발생 위치에 따른 매체 상태와의 연관성을 연구하였다.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.169-177
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• 1992

자기광효과가 큰 수직자기 이방성을 가진 자성박막에 레이저광으로 정보를 기록하고 판독하는 광자기 기록기술(Magneto-optical recording technology)은 1950년대 후반부터 연구가 되기 시작하여, 현재는 5.25" 디스크 에 400~600 Mbytes의 저장 능력, access time이 30~200 nm, data transfer rate이 1.2~8 Mbits/s 수준의 제품이 상품 화되고 있다. 광자기 기록은 자기기록방식의 무제한 반복기록의 장점과 광기록방식의 비접촉 기록, 고집적 능력, 디스크 제거기 능의 제 장점이 병합된 기술로서 향후 정보저장의 새로운 기술로서 그 자리를 굳혀갈 것으로 예상된다. 본 해설에서는 광자기 기록매체를 중심으로 하여 광자기 기록기술의 기록 및 판독원리, 광자기 기록재질, 광자기 디스크 SNR, direct overwriting의 제방법, 차세대를 향한 고밀도화의 시도에 대해 각각 서술한 후 결론을 맺고저 한다.