• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.806-811
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• 2017

An all-transparent ultraviolet (UV) photodetector was fabricated by structuring $p-NiO/n-SnO_2/ITO$ on a glass substrate. $SnO_2$ is an important semiconductor material because of its large bandgap, high electron mobility, high transmittance (as high as 80% in the visible range), and high stability under UV light. For these reasons, $SnO_2$ is suitable for a range of applications that involve UV light. In order to form a highly transparent p-n junction for UV detection, $SnO_2$ was deposited onto a device containing NiO as a high-transparent metal conductive oxide for UV detection. We demonstrated that all-transparent UV photodetectors based on $SnO_2$ could provide a definitive photocurrent density of $4nA\;cm^{-2}$ at 0 V under UV light (365 nm) and a low saturation current density of $2.02nA{\times}cm^{-2}$. The device under UV light displayed fast photoresponse with times of 31.69 ms (rise-time) and 35.12 ms (fall-time) and a remarkable photoresponse ratio of 69.37. We analyzed the optical and electrical properties of the $NiO/SnO_2$ device. We demonstrated that the excellent properties of $SnO_2$ are valuable in transparent photoelectric device applications, which can suggest various routes for improving the performance of such devices.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.325-330
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• 2004

We fabricated a vacuum ultraviolet spectre-reflectometer which consists of a deuterium light source, a vacuum monochromator, and a sample chamber and detector module. The operation was performed in the ultraviolet spectral ranges between 115 nm and 330 nm at the vacuum pressure of 3.0 ${\times}$ 10$^{-4}$ Pa. The wavelength of the vacuum monochromator was calibrated with the line spectrum of a low pressure Mercury lamp of 253.652 nm and 184.95 nm wavelengths, and its resolution was 0.012 nm, and the precision of wavelength was $\pm$ 0.03 nm. With this reflectometer and a deuterium lamp, we measured the spectral regular transmittance and reflectance of materials(MgF$_2$, CaF$_2$, BaF$_2$, SiO$_2$, Sapphire) used as optical components over the spectral range between 115 nm and 230 nm.

• Journal of the Korean Chemical Society
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• v.43 no.5
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• pp.517-521
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• 1999

Gas chromatography using sulfur chemiluminescence detection (GC-SCD) which exhibits very good selectivity, linearity, and sensitivity was applied to the analysis of suIfur compounds in gaseous fuel. The expectmental method used in this study was to resolve the problems of repeatability and reproducibility by means of the adsorption of sulfur compounds, which is different from the existing analysis method of these compounds by GC-SCD. The calibration curves of the standard gases including dimethyl sulfide, t-butylmercaptan and ethyl methyl sulfide exhibited an excellent linearity. As the result of precision tests for the above three compounds, the high reproducibility for tests showed while repeating three times during four days, respectively. In addition, the coefficient of variation was less than 3%. In consequence, the expectmental method of this study is very effective not only with low uncertainty but also with better accuracy, which can quickly determine the concentration of gas odorants in LPG (Liquefied Petroleum Gas) from oil reservoirs and filling stations.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.159-159
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• 2010

펄스 직류 전원 $BCl_3$/He 플라즈마를 사용하여 GaAs의 건식 식각을 연구하였다. 공정 변수는 가스 유량 (0~100% $BCl_3$ in $BCl_3$/He), 펄스 파워 ($450{\sim}600\;{\nu}$), 펄스 주파수 (100~250 KHz), 펄스 시간 ($0.4{\sim}1.2\;{\mu}s$)이었다. 식각 공정 후 식각률, 포토레지스트에 대한 식각 선택도, 표면 거칠기는 표면 단차 측정기를 이용하였다. 식각 공정 동안 플라즈마 광 특성 분석은 광학 발광분석기 (Optical emission spectroscopy)를 사용하였다. 실험 후 주사 전자 현미경을 이용, 식각 후 시료의 단면과 표면을 관찰하였다. 실험 결과에 의하면 1) 펄스 파워, 주파수, 시간을 고정 ($500\;{\nu}$, $0.7\;{\mu}s$, 200 KHz)하고 10% He 가스가 혼합되어 있는 조건에서 GaAs의 식각률이 순수한 $BCl_3$를 사용한 것보다 높았다. 이를 통해 식각 공정에서 일정량 이하의 He 혼합은 GaAs 식각률을 증가시키는 시너지효과가 있음을 알 수 있었다. 2) 그러나 약 20% 이상의 He 가스의 혼합은 GaAs의 식각 속도를 저하시켰다. 3) 10% He (9 sccm $BCl_3/1$ sccm He), 200 KHz 펄스 주파수, $0.7\;{\mu}s$ 펄스 시간의 조건에서 펄스 파워가 증가함에 따라 GaAs의 식각률 또한 선형적으로 증가하였다. 4) 특히, $600\;{\nu}$의 파워에서 식각률은 ${\sim}0.5\;{\mu}m/min$로 가장 높았다. 5) 표면 단차 측정기와 전자현미경을 이용하여 식각한 GaAs를 분석한 결과 10% He이 혼합되어 있는 조건에서는 우수한 수직 측벽과 매끈한 표면 (RMS roughness <1 nm)을 관찰할 수 있었다. 6) 10% He이 혼합된 $BCl_3$/He 펄스 직류 플라즈마 식각 후 XPS 분석결과에서도 기준 샘플과 비교하였을 때, 공정 후의 GaAs 표면이 화학적으로 깨끗하며 잔류물이 거의 검출되지 않았다. 위의 결과를 정리하였을 때, 펄스 직류 $BCl_3$/He 플라즈마는 GaAs의 식각에서 매우 우수한 공정 결과를 나타내었다.

• Korean Journal of Weed Science
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• v.14 no.1
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• pp.1-7
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• 1994

The effects of S-23142{N-(4-chloro-2-fluoro-5-propargyloxyphenyl)-3, 4, 5, 6-tetrahydrophtalimide}, on protoporphyrin IX(PPIX) biosynthesis in Spinacia oleracea L, leaf in vivo and in vitro condition were investigated by reversed-phase HPLC with fluorescence detector. The stroma and the membrane fraction of spinach chloroplast were isolated by osmotic regulation. The conversion of ${\delta}$-aminolevulinic acid(ALA) to PPIX occured more in the stroma than in the membrane fraction. It suggested that the enzymes that catalyse PPIX biosynthesis from ALA were localized in the stroma. Also, the synthesized PPIX content from ALA was completely inhibited by $10^{-8}M$ of S-23412 or $10^{-7}M$ of acifluorfen in the stroma but not in the membrane fractions. Therefore, these results suggested that the target site of S-23142 and acifluorfen may exist in the stroma fraction of spinach chloroplast.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.308-308
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• 2011

6.48 ${\AA}$의 격자 상수를 갖는 InSb 물질은 0.17 eV의 낮은 에너지 밴드갭과 78,000 cm2/Vs의 전자 이동도를 갖는 물질로서 고속의 자성 센서소자, 장파장의 광 검출기 그리고 고속 전자소자 등의 분야에서 많은 주목을 받고 있다. 그러나, 전기적 특성이 우수한 InSb 물질을 소자로 구현하는데 있어서 큰 어려움이 있다. InSb와 격자 크기가 잘 맞으면서 절연이 우수한 기판의 부재가 가장 큰 문제가 되는 부분이다. 즉, 격자 부정합을 최소화하며 동시에 절연기판을 사용함으로써 소자의 특성을 잘 살려야 하는 것이다. 이러한 이유로 인하여 InSb 기반의 소자가 널리 사용되지 못하고 있는 것이다. 현재 범용으로 사용하고 있는 기판은 격자 부정합이 14%인 GaAs, 11%의 InP 그리고 18%의 Si 등이 있다. 이번 발표에서는 GaAs 기판 위에 격자 부정합을 최소화하여 InSb 박막을 최적화 시켜 성장하는 방법에 대해서 소개하고자 한다. InSb 박막 성장하는데 있어 논문으로 보고된 여러 가지 방법들이 있다. 기판과의 격자 부정합을 줄이기 위하여 저온-고온 (L-T)의 의한 메타몰픽(metamorphic) buffer 층을 성장 후 InSb 박막을 성장하는 방법[1] 그리고 단계별 buffer를 성장하는 방법[2] 등을 통해서 많은 진보가 있었다. 하지만, 우리는 GaAs 기판 위에 AlSb 박막을 성장 하면서 동시에 In과 Al의 양을 서서히 변화시키는 grading 기술을 사용하였다. 즉, 물질 각각의 격자상수를 고려하여 GaAs (기판)-AlSb-InAlSb-InSb로 변화를 주어 격자 부정합이 최소가 되도록 하여 만들어진 buffer 위에 InSb 층이 만들어 지도록 하여 GaAs 기판 위에 InSb 박막을 성장 할 수 있었다. grading 기술을 이용하여 만들어진 buffer 위에 성장된 0.3 um의 InSb 박막 층은 상온에서 전자 이동도가 약 38,000 cm2/Vs에 이르는 것을 확인하였다. InSb 박막의 두께가 약 1 um 되어야 30,000 cm2/Vs 이상의 전자 이동도를 얻을 수 있다고 많은 논문을 통해서 보고 되고 있으나 우리는 단지 0.3 um의 InSb 박막두께에서 이와 같은 전기적인 특성을 확인하였기에 이상과 같이 보고 하고자 한다.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.13-17
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• 2013

In lighting system where several large-area organic light-emitting diode (OLED) lighting panels are involved, panel aging may appear differently from each other, resulting in a falling-off in lighting quality. To achieve uniform light output across large-area OLED lighting panels, we have employed an optical feedback circuit. Light output from each OLED panel is monitored by the optical feedback circuit that consists of a photodiode, I-V converter, 10-bit analogdigital converter (ADC), and comparator. A photodiode generates current by detecting OLED light from one side of the glass substrate (i.e., edge emission). Namely, the target luminance from the emission area (bottom emission) of OLED panels is monitored by current generated from the photodiode mounted on a glass edge. To this end, we need to establish a mapping table between the ADC value and the luminance of bottom emission. The reference ADC value corresponds to the target luminance of OLED panels. If the ADC value is lower or higher than the reference one (i.e., when the luminance of OLED panel is lower or higher than its target luminance), a micro controller unit (MCU) adjusts the pulse width modulation (PWM) used for the control of the power supplied to OLED panels in such a way that the ADC value obtained from optical feedback is the same as the reference one. As such, the target luminance of each individual OLED panel is unchanged. With the optical feedback circuit included in the lighting system, we have observed only 2% difference in relative intensity of neighboring OLED panels.

• Journal of Sensor Science and Technology
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• v.19 no.4
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• pp.328-335
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• 2010

We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 ${\mu}m$ standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.

• Analytical Science and Technology
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• v.17 no.2
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• pp.98-107
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• 2004

In this study, $^1H$ NMR spectroscopy and HPLC were used to identify the type and quantity of each component in an acrylic coating materials applied for an automotive part. By the $^1H$ NMR analysis, it was found that this acrylic coating contained about 88.40 wt% of poly methyl methacrylate (PMMA), 7.05 wt% of methyl methacrylate (MMA), and 2.36 wt% of allyl methacrylate. Polymer additives such as a benzotriazole light stabilizer (Hisorb 328), an oxanilide light stabilizer, butylated hydroxy toluene (BHT), and dimethyl phthalate (DMP) were also identified and measured quantitatively from the $^1H$ NMR spectra. However, only two light stabilizers were identified by reverse phase (RP) HPLC analysis using Bondapak C18 column, methanol mobile phase, and a PDA (Photodiode array) detector. The contents of two light stabilizers in the acrylic coating were measured by a quantitative analysis through UV-Vis spectroscopy and compared with the NMR data. The analytical informations from $^1H$ NMR spetra were better than those from HPLC-PDA plot.

• Analytical Science and Technology
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• v.16 no.3
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• pp.240-248
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• 2003

Sulfur compounds which are well-known odor-active compounds in industrial area have very low detection threshold values. Trace amounts of volatile sulfur compounds in enviroment air around several odor sources were concentrated in liquid argon bath and determined by gas chromatograph with flame photometric detector (FPD) which exhibits very good selectivity and sensitivity. 25% ${\beta}$,${\beta}$-Oxydipropionitrile on 60/80 Chromosorb W was used as adsorbent for the preconcentration of sulfur compounds in air sample and also as packing material for a packed glass column. Concentration volume of air sample was different from place to place in the range of 0.1~3.0L. Atmospheric concentrations of sulfur compounds in air of residential districts and boundaries of business establishments, and also those in the exhausted gases of emission points such as a sewage disposal plant in industrial area were measured.