• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.101-106
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• 1993

Effects of CaO on microwave dielectric properties of (Ba, Pb)O-Nd2O3-TiO2 ceramic ystem were investigated. As the content of CaO increases, the sintered bulk density decreases due to the decrease of sinterability. However, with increasing the sintering tmperature, the relative dielectric constants increases. This has been attributed on the formation of the 2nd phase inclusion, TiO2(rutile). The Q values increase due to the compensation effect of Ca ions up to 1 wt%, and then decrease due to the interfacial relaxation effects. The temperature coefficient of resonance frequency increases to a positive direction with increasing the amounts of CaO.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.320-323
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• 1997

The microwave dielectric properties of X Ba0-$0.15(Nd_{0.87}Bi_{0.13})_2O_3$-(0.85-X) $TiO_2$ ($X=0.13{\sim}0.17$) and 0.16Ba0-$0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ ($X=0.10{\sim}0.16$) ceramics were investigated. Dielectric constant, quality factor and temperature coefficient of resonant frequency of 0.16Ba0-$0.15(Nd_{0.87}Bi_{0.13})_2O_3-0.69TiO_2$ ceramics sintered at $1320^{\circ}C$ for 2 hours were 89.2, 1920(at 4GHz) and 5.2ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.382-385
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• 2001

In the previous study, a new LTCC material in the $PbWO_{4}-TiO_{2}-B_{2}O_{3}-CuO$ system was introduced. The developed material can be sintered at $850^{\circ}C$ and its dielectric properties are $\varepsilon_{r}=20-25$, $Q{\times}f_{o}=30000\sim50000GHz$, and $\tau_{f}=0.2{\sim}30ppm/^{\circ}C$, respectively. Therefore this material can be used as a LTCC substrate material for fabrication of multilayered high frequency communication module set. In present study, using this material, tape casting condition was established. With this condition, a multilayered resonator was fabricated and its electrical properties were examined. In present study, an antenna-duplexer module was also fabricated. Frequency characteristics of as-fabricated antenna-duplexer module was compared with simulation results.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.86-87
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• 2003

TiO$_2$ 박막은 높은 유전율과 우수한 화학적 안전성, 가시광선 영역에서 우수한 투과성 및 높은 굴절률을 가지고 있어 광범위한 분야에 중요한 물질로써 사용되어져 왔다. 일반적으로 TiO$_2$는 rutile, anatase, brookite의 세 가지 결정형태를 가진다. 이런 TiO$_2$ 박막을 제작하기 위해 sputtering, e-beam evaporation, sol-gel method, chemical vapor deposition(CVD) 등과 같은 물리적, 화학적인 방법이 이용되고 있다. 이러한 제조방법들 중에서 스퍼터링 방법은 박막을 형성하는 이온들의 이온에너지를 높여주어 덩어리에 가까운 성질을 가지기 때문에 조밀한 박막을 제작하는데 이용되며, 박막의 대면적 코팅과 표면 경도가 우수한 박막을 제작할 수 있는 장점을 가지고 있다. (중략)

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1556-1558
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• 1994

An air/quartz dielectric double barrier pulse discharge has been investigated to develop a novel si lent type ozone generator. It is found that there are very active pulsed coronas occurred in the airgap which are very useful for ozone generation. And, the corona onset voltage of the airgap of the air/quartz double barrier was enfluenced greatly by the airgap of the air/quartz dielectric double barrier, and depended greatly upon the airgap ranged of $0.0{\sim}3.0mm$ and by the quartz tube thickness ranged of $1.75{\sim}2.25mm$.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1487-1489
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• 1994

$(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$ system which has a dielectric constant, low dielectric loss and temperature coefficient was investigated. Temperature coefficient varied from positive to negative with increasing of NiO. For the NiO content 1.0wt%. i.e $(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$, the ceramic showed very good dielectric properties such as ${\epsilon}$=37.8, $Q{\times}f_o=49.000$ and ${\tau}_r= 4{\pm}1ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.335-338
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• 1998

The effect of glass flit addition on microwave dielectric properties of BaTiO$_3$-3TiO$_2$ ceramic was studied. Addition of glass frit to this system obtained sintered sample below sintering temperature 105$0^{\circ}C$. At BaTiO$_3$-3TiO$_2$+ g1ass frit 3wt% + BaWO$_4$6 wt%m, this ceramic showed excellent microwave properties of dielectric constant 34, Q$\times$f 8,100, temperature coefficient of resonant frequency 4 ppm/$^{\circ}C$ .

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.636-639
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• 2000

Effects of sintering temperature and time on relative permittivity $\varepsilon$$\_$r/, unloaded quality factor Q$.$f and temperature coefficient of resonant frequency $\tau$$\_$f/ of dielectric resonator materials produced from commercial ZST powder were investigated in some detail. Q$.$f values, as determined from cavity perturbation method at 1.6 GHz, gradually increased with sintering temperature reaching the maximum at 1420$^{\circ}C$. However, bulk density and relative permittivity values, which increased with temperature, started to decrease above 1380$^{\circ}C$. In addition, Q$.$f values slightly increased with sintering time at the sintering temperature of 1300$^{\circ}C$∼1380$^{\circ}C$, while bulk density and relative permittivity values were approximately constant. It was also found that $\tau$$\_$f/ values were not affected by sintering temperature and time within the experimental conditions used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.405-408
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• 1997

The microwave dielectric properties of CuO and CdO addition of BiNbO$_4$ceramics were investigated. As the content of CdO increased, sintered density and quality factor is decreased. With increase in sintering temperature, the dielectric constant and quality factor is increased. In case of specimen sintered at 96$0^{\circ}C$ with 0.03 wt% CuO and CdO, the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor (Q$\times$f) of 6, 500, temperature coefficient of resonant frequency of ppm/$^{\circ}C$.