• Title/Summary/Keyword: 고정자장

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Speed and Torque characteristics of Ultrasonic Motor by Voltage difference control (전압차 제어에 의한 초음파 모터의 속도 및 토오크 특성)

  • 김영동;오금곤
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.10 no.6
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    • pp.88-95
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    • 1996
  • The ultrasonic motor(USM) has good characteristics such as compact size, silent motion, high speed responce, low speed and high torque. The USM is driven by 2-phase AC electricity. The control parameters of USM are voltage, phase, and frequency of input powers, etc. In this paper, a voltage difference control is proposed. The voltage difference control has more advantage than phase difference control. Specially, current and power is lower than that of phase difference control. For this voltage diffrence control, we designed USM controller to adjust volatage and phase using PLSI(Programmable Large Scale Integration).

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Co-Fe-B 자왜변환기를 이용한 간섭계형 광섬유 자계센서의 동작특성

  • 이경식
    • Korean Journal of Optics and Photonics
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    • v.4 no.4
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    • pp.474-479
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    • 1993
  • An interferometric fiber-optic magnetic field sensor is constructed by bonding a Co-Fe-B metallic glass transducer developed here by the melt-spun method to a single mode fiber arm in the fiber Mach-Zehnder interferometer and is tested. The bias field for the peak ac-sensitivity was observed near 0.97 Oe and the minimum detectable magnetic field was 3.9${\times}10^{-5}$ Oe(rms)/${\sqrt{Hz}}$ a 3 kHz. The output of the ac field sensor becomes saturated near the input signal level of 1 Oe(rms). The Co- Fe-B transducer exhibits peak response near 500 Hz.

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A Study on the Magnetoresistive RAM (MRAM) Characteristics of NiFeCo/Cu/Co Trilayers (NiFeCo/Cu/Co 삼층막의 자기저항 메모리 특성에 관한 연구)

  • 김형준;이병일;주승기
    • Journal of the Korean Magnetics Society
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    • v.7 no.3
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    • pp.152-158
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    • 1997
  • NiFeCo/ Cu /Co trilayers were formed on 4$^{\circ}$ tilt-cut Si(111) substrates with a Cu(50$\AA$) underlayer and large-scaled test magnetoresistive RAM (MRAM) cells were fabricated using a conventional lithographic process. NiFeCo / Cu /Co trilayers deposited on the same templates without any applied magnetic field showed strong in plane uniaxial magnetic anisotropy and excellent magnetoresistive (MR) properties such as high MR ration and sensitivity within a low external magnetic field, which are suitable properties for a MRAM application. In order to obtain optimized MR results in NiFeCo /Cu /Co trilayers, the thickness of Cu spacer was varied. Interlayer coupling between two magnetic layers was observed and it was found that the MR properties were strongly dependent on the coupling force, especially near 20 $\AA$ of Cu spacer thickness. Test MRAM cells were fabricated using the optimized NiFeCo (60$\AA$)/ Cu (25$\AA$)/ Co (30$\AA$) trilayer thin films. With a 10 mA of sense current and 5$\times$$10^5$ of word current, 10 mV of signal output was obtained, which implies the strong potentials of NiFeCo/ Cu /Co trilayer thin films for a MRAM application.

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Shape Magnetic Anisotropy on Magnetic Easy Axis of NiFe/Cu/NiFe/IrMn Spin Valve Thin Film (NiFe/Cu/NiFe/IrMn 스핀밸브 박막소자의 자화 용이축에 따른 형상 자기이방성)

  • Choi, Jong-Gu;Kwak, Tae-Joon;Lee, Sang-Suk;Sim, Jung-Taek
    • Journal of the Korean Magnetics Society
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    • v.20 no.2
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    • pp.35-40
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    • 2010
  • The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.

Post-annealing Effect of Giant Magnetoresistance-Spin Valve Device for Sensor (센서용 거대자기저항 스핀밸브소자의 열처리 효과)

  • Lee, Sang-Suk;Park, Sang-Hyun;Soh, Kwang-Sup;Joo, Ho-Wan;Kim, Gi-Wang;Hwang, D.G.
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.172-177
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    • 2007
  • In order to detect of the magnetic property in the cell unit, we studied the GMR-SV (giant magnetoresistance-spin valves) biosensor, which was depended on the micro patterned features according to two easy directions of longitudinal and transversal axes. Here, the multi layer structure was glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe. The uniaxial anisotropy direction was applied to the patterned biosensor during the deposition and vacuum post-annealing at $200^{\circ}C$ under the magnitude of 300 Oe, respectively. Considering the magnetic shape anisotropy effect, the size of micro patterned biosensor was a $2{\times}5{\mu}m^2$ after the photo lithography process. By our experimental results, we confirmed that the best condition of GMR-SV biosensor should be the same direction of the axis sensing current and the easy axis of pinned NiO/NiFe/CoFe triple layer oriented to the width direction of device, and the direction of the easy axis of free CoFe/NiFe bilayer was according to the longitudinal direction of device.

Tunneling Magnetoresistance of a Ramp-edge Type Junction With Si3N4 Barrier (Si3N4장벽층을 이용한 경사형 모서리 접합의 터널링 자기저항 특성)

  • Kim, Young-Ii;Hwang, Do-Guwn;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.12 no.6
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    • pp.201-205
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    • 2002
  • The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and +90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.

The Study on Magnetioresistance in Fe[NiFe/Cu] Multilayers (Fe[NiFe/Cu] 다층박막의 자기저항 효과에 대한 연구)

  • 박병숙;백주열;이기암;현준원
    • Journal of the Korean Vacuum Society
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    • v.5 no.3
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    • pp.258-262
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    • 1996
  • We have investigated the changes in magnetoresistive characteristics, interfacial roughness, and preferred orientation with the Fe buffer layer thickness, annealing temperature, and the stacking number of layers variation in Fe/[NiFe/Cu] multilayers by using the 3-gun d.c. magnetron sputtering method. Intensity of the (200) orientation was increased with the increment of the Fe-buffer layer thickness. We found a maximum magnetoresistance ration of 4.7%, when the buffer layer thickness was 70$\AA$, and the field sensitivity also showed a maximum value at the same thickness. We varied the stacking number of multilayers with fixing the Fe buffer layer thickness of 70$\AA$. When the stacking number was 40 layers, maximum MR ratio(5.3%) was observed. With the variation of annealing temperature no change in the MR ratio was found beyond $300^{\circ}C$. But decrement of MR ratio was observed above $300^{\circ}C$. This decrement of the MR ratio was responsible for the increment of paramagnetic mixed layer caused by the diffusion of Cu layer and the change of antiferromagnetic coupling.

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Unbalance Magnetron 스퍼터링 소스의 특성

  • 정재인;박형국;박성렬;이석연;염승호
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.134-134
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    • 1999
  • 스퍼터링 소스는 전자기 박막 등 기능성 박막을 비롯하여 결질피막, 장식성 피막등의 제조에 이용되는 것으로 각종 증발원 중에서 가장 널리 사용되는 증발원이다. 70년대 이후 스퍼터링 소스는 마그네트론 스퍼터링으로 대표되는 방식이 사용되어 왔으며 지금까지도 가장 일반적인 방식이 되어 왔다. 마그네트론 스퍼터링 증발원은 증발율에서는 기술적인 향상이 이루어진 반면 이온화율의 향상은 그다지 이루어지지 않아 경질피막과 같은 화합물 피막의 특성 향상에는 한계를 드러내게 되었다. 그러다가 186년 Window 등 이 자장의 세기를 변형시킨 비평형 마그네트론 소스(Unbalanced Magnetron;UBM)를 처음 발표하여 이온화율의 향상이 가능하다는 것이 알려지면서 이에 대한 많은 연구가 진행되었다. UBM 소스는 마그네트론 스퍼터링 소스의 외부에 전자석을 설치하여 기판에 흐르는 이온의 양을 증가시킴으로써 소스와 기판사이의 거리를 증가시킬 수 있고 따라서, 복잡한 형상의 부품코팅이 가능하며 피막 특성을 향상시킬 수 있는 장점이 있다. 본 연구에서는 UBM 스퍼터링 소스를 설계, 제작하여 그 특성을 다양한 측면에서 조사하였다. 특히, 자작의 최적 설계를 통해 전자석의 조건을 도출하였음, Dual UBM 소스의 특성을 동시에 조사하였다. 자기장의 simulation에는 Quick field 프로그램을 이용하였고 기존의 방식과의 비교를 통해 최적의 조건을 도출하였다. 이를 바탕으로 inner pole의 크기를 30mm, outer pole의 크기를 26mm로 고정하여 설계하였고, 외부에 전자석이 설치된 UBM 소스를 제작하였다. 본 UBM 소스는 4" 타겟을 사용할 수 있으며 전자석의 조건을 10A까지 변화시켜 자기장의 세기를 변화시킬 수 있게 하였다. 제작된 소스의 동작조건 설정과 최적화를 위한 스퍼터링 장치를 함께 제작하여 UBM 소스의 최적 동작 조건을 도출하였다. 전자석의 전류가 4.5A일 때 Inner Pole과 Outer Pole의 자기장의 세기가 도일함을 알 수 있었다. 기판과 타겟의 거리가 200mm일 경우에 기판에 흐르는 전류밀도는 2mA/cm2이상이 됨을 확인하였다. 이 결과는 기존의 마그네트론 소스가 기판과 타겟사이의 거리가 100mm일 때 1mA/cm2 정도가 되는 것과 비교하면 이온화율이 획기적으로 향상된 것임을 알 수 있다.수 있다.

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Magnetoresistance of Single-type and Dual-type GMR-SV Multilayer Thin Films with Top and Bottom IrMn Layer (상부와 하부 IrMn층을 갖는 단일구조 및 이중구조 거대자기저항-스핀밸브 다층박막의 자기적 특성 비교 분석)

  • Choi, Jong-Gu;Kim, Su-Hee;Choi, Sang-Heon;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.27 no.4
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    • pp.115-122
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    • 2017
  • The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

Comparison of the SNR in the MR images on dental implant material (치아 임플란트 재료에 따른 자기공명영상의 SNR 비교)

  • Kim, Dong-Hyun;Ko, Seong-Jin;Ye, Soo-Young
    • Journal of the Institute of Convergence Signal Processing
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    • v.16 no.4
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    • pp.149-155
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    • 2015
  • Tooth implant is located in oral cavity and affects neck, skull base, and facail image. These magnetic inhomogeneities are usually frequency encoding direction which cause artifacts due to change of signal strength and geometric distortion. First, to evaluate signal to noise ratio (SNR) of magnetic resonance image caused by tooth implant this study uses meat phantom which is similar to human body and is consisted with fat, muscle, and water to measure signal to noise ratio. Second, signal to noise ratio by using custom-made fixed phantom is measured, and then signal to noise ratio size of different tooth implant types is compared and analyzed. The measured signal to noise ratio values of Brushite, HSA, Metal, and RBM for meat phantom were 2.76, 2.22, 1.88, and 1.57 on T1 SE, 1.88, 1.78, 1.65, and 1.79 on T2 FLAIR, 2.28, 2.25, 2.88, and 2.05 on T2 FSE, and 2.74, 1.94, 1.67, and 1.48 on T2 GRE. The measured signal to noise ratio values of Brushite, HSA, Metal, and RBM for fixed water phantom were 1.2, 1.06, 1.12, and 1.22 on DWI, 1.93, 1.87, 1.93, and 2.06 T1 SE, 1.83, 1.76, 1.82, and 1.92 on T2 FLAIR, 1.85, 1.79, 7.86, and 1.97 on T2 FSE, and 1.97, 1.93, 1.99, and 2.06 on T2 GRE. By considering through the results, patients and dentists need to consider some impacts from testing many aspects although their main purpose of having tooth implants is a dental restoration. Moreover, depending on the tooth implant characteristics of individual patients this study results can be used as baseline data when choosing test protocol.